The fabrication process of a nano-positioning stage with a high aspect ratio and big dimension is presented in this paper

which is based on bulk micromachining. The effect of deep reactive ion etching and the technology of protecting the backside for the etching silicon on the structure are analyzed. Some factors causing nano-position stage failure are identified

and advices are provided for avoidance of these failure. Moreover

an effective technique of fabricating vertical sidewall piezoresistor in plane is proposed and used to fabricate piezoresistor in this nano-positioning stage. With adjusting DRIE parameters method a high aspect ratio and big dimension backside windows for releasing the structure and electrostatics comb structure of 2.5μm wide and 50μm thickness were successfully released. A high aspect ratio nano-positioning stage integrating displacement sensor has been developed.