A new method in pulsed laser bending of single-crystal silicon was presented in this paper. An analytical model was developed to describe the spatial-time characteristics of pulsed laser. In order to simulate the laser bending of process

the FEM software ANSYS was used

and the temperature field was predicted with stress-strain field in the bending process. The periodic transformation of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet was analyzed

and the research results indicate that the mechanism of pulsed laser bending silicon is a hybrid mechanism

rather than a simplex mechanism of TM or BM. This paper also gets silicon sheet bended by scanning 6 times with pulsed laser

and the final bending angle is 6.5

in which the simulation reaches well agreement with the experiments.