Ge1-xCx thin films are deposited on germanium substrate by Reaction Low Voltage Ion Plating (RLVIP) technique. Germanium is evaporated by e-gun

and methane is ionized as reactive gas. Ge1-xCx thin films

with carbon content ( x ) raging from 0.23 to 0.78 at different depositing rate are fabricated at the same condition. X-ray Diffraction (XRD) tests indicate the films are amorphous. Chemical bonding properties are systematically investigated by X-ray photoelectron spectroscopy (XPS). It is observed that chemical bonding with different hybridization which depends on C concentrations. As x higher than 0.78

carbon bonds to hydrogen; x is in the range of 0.53 to 0.62

bonding property is carbon-carbon tetrahedrally and/or graphitic; x is lower than 0.47

the component can be related to Ge-C bond.