In order to understand the material removal mechanism during wafer rotation grinding

this study investigates the phase transformations on the ground silicon wafer surface with the aid of Raman microspectroscopy. The results show that，the amorphous silicon (-Si )

Si-III phase

Si-IV phase and Si-XII phase existing on the semi-fine and fine ground wafer surface indicate that the Si-I phase is transformed to ductile metal phase (Si-II phase) during grinding. The Si-II phase is ductile and easily removed by ductile mode. There is no obvious polycrystalline silicon on the rough ground wafer surface. Only very small amount -Si is observed. The material was removed by brittle mode. From rough grinding to fine grinding

the material removal mode changes from micro-fracture mode to ductile mode gradually. During the transition from rough grinding to semi-fine grinding

with the increasing of the phase transformation degree

the ductile mode removal degree increases. During the transition from semi-fine grinding to fine grinding

the ductile mode removal degree increases as the phase transformation degree decreases.