Three types of industrial silicon solar cells: P-type of cast-multicrystlline silicon

edge-defined film-fed growth (EFG) and single silicon solar cells have been analyzed

using spectral response (external quantum efficiency

EQE)

light beam induced current (LBIC) and dark and illuminated current-voltage measurement (I-V). The diode equivalent model solar cells allows to deduce

from measured data

important cell parameters such as the ideality factors of diodes n

the saturation currents I0 and the parasitic resistance RS and RSH. The type of extended defect are discussed which effect these cells parameters in terms of the result of EQE and LBIC. For cast-multicrystlline silicon and EFG solar cells

the grain boundaries

dislocation and impurity in bulk silicon can be accounted for the degradation of cell parameter

but for single silicon solar cells maybe born-oxygen defect pairs.