单晶硅纳米力学性能的测试

赵宏伟; 杨柏豪; 赵宏健; 黄虎

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单晶硅纳米力学性能的测试

微纳技术与精密机械 | 更新时间：2020-08-12

- 单晶硅纳米力学性能的测试
- Test of nanomechanical properties of single crystal silicon
- 光学精密工程 2009年17卷第7期页码：1602-1608
- 作者机构：
  
  1. 吉林大学机械科学与工程学院,吉林长春,130022
  2. 北京航天计量测试技术研究所力学室北京,100076
  3. 浙江大学材料与化学工程学院,浙江杭州,310027
- 作者简介：
- 基金信息：
  
  高等学校博士学科点专项科研基金(新)(No.20081831024)();吉林省科技项目(No.SC0704083)();吉林大学自然科学种子基金资助项目(No.498
- DOI：
  中图分类号： TN304.07
- 收稿日期：2008-03-13，
  
  修回日期：2008-05-29，
  
  网络出版日期：2009-07-25，
  
  纸质出版日期：2009-07-25
- 稿件说明：
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赵宏伟, 杨柏豪, 赵宏健, 黄虎. 单晶硅纳米力学性能的测试[J]. 光学精密工程, 2009,17(7): 1602-1608

ZHAO Hong-wei, YANG Bai-hao, ZHAO Hong-jian, HUANG Hu. Test of nanomechanical properties of single crystal silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1602-1608
赵宏伟, 杨柏豪, 赵宏健, 黄虎. 单晶硅纳米力学性能的测试[J]. 光学精密工程, 2009,17(7): 1602-1608 DOI：

ZHAO Hong-wei, YANG Bai-hao, ZHAO Hong-jian, HUANG Hu. Test of nanomechanical properties of single crystal silicon[J]. Editorial Office of Optics and Precision Engineering, 2009,17(7): 1602-1608 DOI：

摘要

对材料纳米力学性能测试手段进行了研究

着重分析了纳米压痕技术的原理和方法。结合纳米压痕技术

采用尖端四面体Vickers型单晶金刚石压头对单晶硅(100)晶面进行了纳米压痕实验测试。实验发现

在载荷为1 000 mN时

晶体硅出现了明显的裂纹和脆性断裂;而在载荷低于80 mN的情况下

晶体硅则表现出延性特性。此外

在不同载荷条件下对晶体硅的硬度进行了实验测试

测试结果发现

不同载荷条件下晶体硅的硬度测量值存在较大的差异

认为导致这种差异的原因在于压痕区域晶体硅所受压力不同

使得晶体硅内部结构发生了改变

较为准确的单晶硅的硬度测量值为15.7 GPa。

Abstract

The testing methods for nanomechanic properties of materials widely used in machining in micro-nano scale

MEMS/NEMS

biomedical engineering

material sciences

etc

. are researched and the main principle and methods of nanoindentation technology are analyzed. By a four-sided Vickers diamond indenter with a sharpened tip

the nanoindentation experiments are undertaken to test the single crystal silicon on (100) crystal surface with the help of a nanoindentation tester.Experiments show that the brittle crack is occurred around the nanoindentation zone on silicon surface when the maximum load of indentation is 1 000 mN. However

the crystal silicon shows plastic property when the maximum load of indentation is below 80 mN. Moreover

the hardness test of the crystal silicon with different loads is carried out

and the testing results show that the hardness is quite different in different loads.It is explained that the appeared phenomenon may come from the phase transformation under the nanoindentation zone inside the silicon wafer

because the pressure around the nanoindentation zone is different. The testing result of the hardness of single crystal silicon is about 15.7 GPa.

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references

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