Considering thermal factors changing with temperature

the laser bending experiments and simulation were conducted based on the material of silicon. The laser bending simulation program is edited by APDL and started from a single point of the temperature field

temperature variation on action point in cycle time were obtained；NiCr/NiSi alloy thin film thermocouple was applied to measure temperature distribution of single-pulse action process. Comparing the temperature field simulation results with thermocouple measurements results

absorption factor of silicon was modified into synthetic coefficient. Finite element analysis software was used in the simulation of pulse laser bending of silicon. The results of the simulation and experiments indicate that the simulation program was effective. The outcomes provided theoretical and experimental foundation for laser bending of silicon.