反应磁控溅射法制备氮化铝钪薄膜

陈宇昕; 刘玉菲; 尚正国

doi:10.37188/OPE.20202809.1924

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反应磁控溅射法制备氮化铝钪薄膜

现代应用光学 | 更新时间：2020-09-28

- 反应磁控溅射法制备氮化铝钪薄膜
- Preparation of ScAlN thin film through reactive magnetron sputtering
- 光学精密工程 2020年28卷第9期页码：1924-1929
- 作者机构：
  
  1.重庆大学光电工程学院, 重庆 400044
  2.重庆大学光电技术及系统教育部重点实验室, 重庆 400044
- 作者简介：
  
  [ "陈宇昕(1995-), 男, 河北邯郸人, 硕士, 2017年于重庆大学获得学士学位, 主要从事硅基氮化铝、氮化铝钪及其他MEMS工艺方面的研究。E-mail:20133013@cqu.edu.cn" ]
  尚正国(1981-), 男, 河南洛阳人, 高级工程师, 重庆大学MEMS工艺平台技术骨干人员, 2014年于重庆大学获得博士学位, 主要从事硅基AlN薄膜制备及其声波器件工艺等方面的研究。E-mail:zhengry@cqu.edu.cnSHANG Zheng-guo, E-mail: zhengry@cqu.edu.cn
- 基金信息：
  
  重庆市基础科学与前沿技术研究项目(cstc2017jcyjAX0237);重庆市研究生研究与创新基金资助项目(CYS18036);国家863高技术研究与发展计划先进制造技术领域基金资助项目(2015AA042603);国家重点研发计划基金资助项目(2018YFF010111200)
- DOI：10.37188/OPE.20202809.1924
  中图分类号： O484.1
- 收稿日期：2020-02-11，
  
  修回日期：2020-02-18，
  
  录用日期：2020-2-18，
  
  纸质出版日期：2020-09-25
- 稿件说明：
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陈宇昕, 刘玉菲, 尚正国. 反应磁控溅射法制备氮化铝钪薄膜[J]. 光学精密工程, 2020,28(9):1924-1929.

Yu-xin CHEN, Yu-fei LIU, Zheng-guo SHANG. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and precision engineering, 2020, 28(9): 1924-1929.
陈宇昕, 刘玉菲, 尚正国. 反应磁控溅射法制备氮化铝钪薄膜[J]. 光学精密工程, 2020,28(9):1924-1929. DOI： 10.37188/OPE.20202809.1924.

Yu-xin CHEN, Yu-fei LIU, Zheng-guo SHANG. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and precision engineering, 2020, 28(9): 1924-1929. DOI： 10.37188/OPE.20202809.1924.

摘要

为了制备出压电性能良好、c轴择优生长的氮化铝钪压电薄膜，本文利用脉冲直流反应磁控溅射法制备了几组氮化铝钪薄膜，通过控制变量，并利用X射线衍射仪、扫描电子显微镜和压电系数测试仪等测试设备，研究了气体流量、功率、衬底温度、缓冲层结构以及掺钪对薄膜结晶质量及性能的影响，优化了工艺参数。结果表明，相比于钛铂缓冲层，使用氮化铝/钛/铂缓冲层制备薄膜，可以使摇摆曲线半高宽由2.62°降至2.38°。然后，对钪掺杂机理进行了简单分析，本文所制备氮化铝钪薄膜的纵向压电系数

高达-10.5 pC/N，是纯氮化铝压电系数的1.9倍，XRD图谱及SEM图像表明，在该掺杂浓度下，压电系数的提高主要是通过钪掺杂产生的晶格畸变引起，而非改变了晶体结构。

Abstract

To prepare a well-oriented ScAlN piezoelectric film with a high piezoelectric coefficient

several groups of ScAlN films were prepared by pulse-DC reactive magnetron sputtering. The effects of gas ratio

power

substrate temperature

buffer layer

and dope rate were investigated through a control variate method. X-ray diffractometer (XRD)

scanning electron microscope (SEM)

and piezoelectric coefficient tester were used for characterization. The results show that the film prepared with AlN/Ti/Pt has a lower FWHM in rocking curve (2.38°) compared with the buffer layer of Ti/Pt (2.62°). The principle of scandium doping was briefly discussed. The ScAlN film prepared in this study has a longitude piezoelectric constant

of -10.5 pC/N

which is 0.9 times higher than that in pure AlN. XRD patterns and SEM images reveal that the improvement in piezoelectric constant is caused by the distortion of the lattice rather than a transition in the crystal structure.

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