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1.洛阳师范学院 物理与电子信息学院,河南 洛阳 471000
2.北京卫星环境工程研究所,北京 100094
3.重庆大学 光电工程学院,重庆 400044
[ "杨数强(1979-),男,河南洛阳人,博士研究生,副教授,2009年于重庆理工大学获得硕士学位,主要从事信号获取与处理技术、机器视觉、物联网及自动控制方面的研究。E-mail:joanhn@163.com" ]
[ "陈宇昕(1995-),男,河北邯郸人,硕士,2020年于重庆大学获得硕士学位,主要从事MEMS传感器、压电薄膜工艺等方面的研究。E-mail:20133013@cqu.edu.cn" ]
[ "尚正国(1981-),男,河南洛阳人,博士,高级工程师,2014年于重庆大学获得博士学位,主要从事MEMS工艺、智能传感与系统方面的研究,尤其是对基于AlN、ScAlN薄膜的SAW、BAW、PMUT及能量收集器等器件方面的研究。E-mail:zhengry@cqu.edu.cn" ]
收稿日期:2020-08-10,
修回日期:2020-09-21,
纸质出版日期:2021-01-15
移动端阅览
杨数强,王军强,张超等.高Sc含量ScAlN薄膜的制备与表征[J].光学精密工程,2021,29(01):21-27.
YANG Shu-qiang,WANG Jun-qiang,ZHANG Chao,et al.Preparation and characterization of ScAlN thin film with high scandium concentration[J].Optics and Precision Engineering,2021,29(01):21-27.
杨数强,王军强,张超等.高Sc含量ScAlN薄膜的制备与表征[J].光学精密工程,2021,29(01):21-27. DOI: 10.37188/OPE.20212901.0021.
YANG Shu-qiang,WANG Jun-qiang,ZHANG Chao,et al.Preparation and characterization of ScAlN thin film with high scandium concentration[J].Optics and Precision Engineering,2021,29(01):21-27. DOI: 10.37188/OPE.20212901.0021.
本文利用优化的种子层结构和工艺参数,以AlSc合金靶为靶源,以脉冲直流反应磁控溅射AlSc合金靶的方式在室温下制备了ScAlN薄膜,同时设计并制作了压电测试专用结构,解决了ScAlN腐蚀工艺不成熟的问题,结合X射线衍射仪、扫描电镜、能谱仪、准静态
d
33
分析仪、纳米压痕法等方法表征了薄膜的结晶质量、组成成分和机电耦合系数等性能。由表征结果可知,所制备的Sc
0.35
Al
0.65
N薄膜具有高度c轴择优取向,摇摆曲线的半高宽低至2.167°,同时结晶致密,有少量贝壳状凸起。薄膜的压电常数
d
33
为
-
23.4 pC/N,机电耦合系数
<math id="M1"><msubsup><mrow><mi>k</mi></mrow><mrow><mn mathvariant="normal">33</mn></mrow><mrow><mn mathvariant="normal">2</mn></mrow></msubsup></math>
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http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=9444503&type=
3.47133350
3.38666677
和
<math id="M2"><msubsup><mrow><mi>k</mi></mrow><mrow><mi>t</mi></mrow><mrow><mn mathvariant="normal">2</mn></mrow></msubsup></math>
http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=9444515&type=
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2.70933342
3.38666677
分别为34.6%和25.7%,具有制备FBAR等高性能压电MEMS器件的潜力。
In this study, a novel seed layer structure was used to prepare ScAlN piezoelectric thin films through pulsed DC reactive magnetron sputtering at room temperature with scandium aluminum alloy as the target source after optimizing the process parameters. A novel structure for
d
33
measurement was designed and fabricated to solve the problem that the wet etch process is still not mature. The crystal quality, components, and electromechanical coupling factor were measured using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, quasi-static
d
33
analysis, and nanoindentation. The Sc
0.35
Al
0.65
N film prepared was highly c-axis oriented, with a full width at half maximum of 2.167°. In addition, the film had a high crystal density with a few shell-like convex parts. The test results show that the piezoelectric constant
d
33
of the film is
-
23.4 pC/N, and the electromechanical coupling factors
<math id="M3"><msubsup><mrow><mi>k</mi></mrow><mrow><mn mathvariant="normal">33</mn></mrow><mrow><mn mathvariant="normal">2</mn></mrow></msubsup></math>
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3.81000018
3.97933340
and
<math id="M4"><msubsup><mrow><mi>k</mi></mrow><mrow><mi>t</mi></mrow><mrow><mn mathvariant="normal">2</mn></mrow></msubsup></math>
http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=9444533&type=
http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=9444528&type=
3.04799986
3.97933340
are 34.6% and 25.7%, respectively. This result shows that the ScAlN film prepared in this study has great potential for the fabrication of high-performance microelectromechanical system piezoelectric devices, such as film bulk acoustic resonators.
TESHIGAHARA A , HASHIMOTO K Y , AKIYAMA M . Scandium aluminum nitride: Highly piezoelectric thin film for RF SAW devices in multi GH z range [C]. Ultrasonics Symposium (IUS) , 2012 IEEE International , 2012 : 1 - 5 .
SCHNEIDER M , DEMIGUEL-RAMOS M , FLEWITT A J , et al . . Scandium aluminium nitride-based film bulk acoustic resonators [J]. Proceedings , 2017 , 1 ( 4 ): 305 .
KUSANO Y , ISHII I , KAMIYA T , et al . . High-SPL air-coupled piezoelectric micromachined ultrasonic transducers based on 36% ScAlN thin-film [J]. IEEE Transactions on Ultrasonics , Ferroelectrics , and Frequency Control , 2019 , 66 ( 9 ): 1488 - 1496 .
MAYRHOFER P M , REHLENDT C , FISCHENEDER M , et al . . ScAlN MEMS cantilevers for vibrational energy harvesting purposes [J]. Journal of Microelectromechanical Systems , 2017 , 26 ( 1 ): 102 - 112 .
LOZANO M S , CHEN Z , WILLIAMS O A , et al . . Temperature characteristics of SAW resonators on Sc 0.26 Al 0.74 N/polycrystalline diamond heterostructures [J]. Smart Materials and Structures , 2018 , 27 ( 7 ): 075015 .
FREI K , TREJO-HERNÁNDEZ R , SCHÜTT S , et al . . Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE [J]. Japanese Journal of Applied Physics , 2019 , 58(SC): SC1045 .
麦姆斯咨询 . 苹果iPhone 11系列中的射频前端模组:博通AFEM-8100 [EB/OL].[ 2020-03-08 ]. https://www.sohu.com/a/378400454_256868 https://www.sohu.com/a/378400454_256868 .
MEMS Consulting . Broadcom AFEM -8100 System - in - Package in the Apple iPhone 11 Series [EB/OL].[ 2020-03-08 ]. https://www.sohu.com/a/378400454_256868. https://www.sohu.com/a/378400454_256868. (in Chinese)
唐供宾 . 面向未来移动通讯系统的高性能层状结构声表面波器件研究 [D]. 上海 : 上海交通大学 2017 .
TANG G B . Research on High Performance Layered Acoustic Surface Wave Devices for Future Mobile Communication Systems [D]. Shanghai : Shanghai Jiaotong University . (in Chinese)
AKIYAMA M , KAMOHARA T , KANO K , et al . . Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering [J]. Advanced Materials , 2009 , 21 ( 5 ): 593 - 596 .
LEONE S , LIGL J , MANZ C , et al . . Metal-organic chemical vapor deposition of aluminum scandium nitride [J]. Physica Status Solidi (RRL) ⁃ Rapid Research Letters , 2020 , 14 ( 1 ): 1900535 .
朱京涛 , 岳帅鹏 , 涂昱淳 , 等 . 氮气反应溅射制备软X射线Co/Ti多层膜 [J]. 光学 精密工程 , 2015 , 23 ( 1 ): 10 - 14 .
ZHU J T , YUE SH P , TU Y CH , et al . . Preparation of Co/Ti multilayer in soft X-ray region by nitrogen reactive sputtering [J]. Optics and Precision Engineering , 2015 , 23 ( 1 ): 10 - 14 . (in Chinese)
BARTH S , BARTZSCH H , GLOESS D , et al . . Sputter deposition of stress-controlled piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications [J]. IEEE Transactions on Ultrasonics , Ferroelectrics , and Frequency Control , 2014 , 61 ( 8 ): 1329 - 1334 .
ZHU Y , WANG N , CHUA G , et al . . ScAlN-based LCAT mode resonators above 2 GHz with high FOM and reduced fabrication complexity [J]. IEEE Electron Device Letters , 2017 , 38 ( 10 ): 1481 - 1484 .
KUSANO Y , ISHII I , KAMIYA T , et al . . High-SPL air-coupled piezoelectric micromachined ultrasonic transducers based on 36% ScAlN thin-film [J]. IEEE Transactions on Ultrasonics , Ferroelectrics , and Frequency Control , 2019 , 66 ( 9 ): 1488 - 1496 .
周剑 , 何兴理 , 金浩 , 等 . 基于ZnO压电薄膜的柔性声表面波器件 [J]. 光学 精密工程 , 2014 , 22 ( 2 ): 346 - 350 .
ZHOU J , HE X L , JIN H , et al . . Flexible ZnO thin film SAW device on polyimide substrate [J]. Optics and Precision Engineering , 2014 , 22 ( 2 ): 346 - 350 . (in Chinese)
尚正国 , 李东玲 , 温志渝 , 等 . 硅基氮化铝薄膜风致振动MEMS能量采集单元 [J]. 光学 精密工程 , 2013 , 21 ( 12 ): 3058 - 3065 .
SHANG ZH G , LI D L , WEN ZH Y , et al . . Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon [J]. Optics and Precision Engineering , 2013 , 21 ( 12 ): 3058 - 3065 . (in Chinese)
FICHTNER S , REIMER T , CHEMNITZ S , et al . . Stress controlled pulsed direct current co-sputtered Al 1– x Sc x N as piezoelectric phase for micromechanical sensor applications [J]. APL Materials , 2015 , 3 ( 11 ): 116102 .
AKIYAMA M , TABARU T , NISHIKUBO K , et al . . Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments [J]. Journal of the Ceramic Society of Japan , 2010 , 118 ( 1384 ): 1166 - 1169 .
MEIZLER A H , BERLINCOURT D , WELSH F S , et al .. 176-1987- IEEE Standard on Piezoelectricity [S]. New York : The Institute of Electronics Engineers, Inc ., 1988 .
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