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1.厦门大学 航空航天学院,福建 厦门 361104
2.集美大学 海洋信息工程学院,福建 厦门 361021
[ "程 翔(1977-),女,博士,副教授,2014-2015为美国佛罗里达大学访问学者,主要研究方向为光电子技术,嵌入式系统,集成光电子学,微纳光机电和集成电路。E-mail:chengfling@xmu.edu.cn" ]
[ "刘 岩(1988-),男,博士,讲师,2010年于天津大学获得学士学位,2013年、2019年于厦门大学分别获得硕士和博士学位,主要研究方向为电源管理芯片,光电集成等。E-mail:ly_liu@jmu.edu.cn" ]
收稿日期:2022-11-03,
修回日期:2022-11-23,
纸质出版日期:2023-04-10
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程翔,常浩然,刘岩等.单片集成光耦隔离式驱动芯片[J].光学精密工程,2023,31(07):1022-1030.
CHENG Xiang,CHANG Haoran,LIU Yan,et al.Monolithic optocoupler isolated driver chip[J].Optics and Precision Engineering,2023,31(07):1022-1030.
程翔,常浩然,刘岩等.单片集成光耦隔离式驱动芯片[J].光学精密工程,2023,31(07):1022-1030. DOI: 10.37188/OPE.20233107.1022.
CHENG Xiang,CHANG Haoran,LIU Yan,et al.Monolithic optocoupler isolated driver chip[J].Optics and Precision Engineering,2023,31(07):1022-1030. DOI: 10.37188/OPE.20233107.1022.
在功率半导体市场中,绝缘栅双极型晶体管(Insulated gate bipolar transistor,IGBT)和碳化硅金属氧化物半导体场效应管(Silicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFET)具有出色的耐压性与频率特性,逐渐取代了传统的MOSFET。为了提高IGBT和SiC MOSFET驱动电路的可靠性,设计了一款光耦隔离式栅极驱动芯片,通过协同设计光探测器与驱动电路,从而实现单片集成。使用Silvaco软件对光探测器进行了仿真。仿真结果显示:光探测器对800 nm波长红外光的响应度约为0.277 A/W,
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3 dB带宽约为90 MHz。进一步对光耦的光学结构进行优化设计,实现了控制端与后端高压驱动电路的有效隔离,从而解决了串扰问题。使用Maxchip 0.18 μm 40 V BCD工艺进行流片,并对封装芯片进行测试。在光源输入电流为10 mA、芯片供电电压为12~40 V、输入信号频率为20 kHz的测试条件下,芯片的传播延时仅为98 ns。
In the power semiconductor market, insulated gate bipolar transistor (IGBT) and silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) have excellent voltage resistance and frequency characteristics, and thus gradually replaced the traditional MOSFETs. The reliability design of IGBT and SiC MOSFET driver circuits is associated with rigorous challenges. Therefore, an optocoupler-isolated gate driver chip was designed in this study. Monolithic integration was realized by co-designing photodetectors and driver circuits. Silveraco software was used to simulate the photodetector. The simulation results indicate that the responsivity of the photodetector to 800 nm infrared light is 0.277 A/W, and the
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3 dB bandwidth is approximately 90 MHz. Further, the optical structure of the optocoupler was optimized to effectively isolate the control end and the rear high-voltage drive circuit, and thus the crosstalk problem was addressed. The 0.18 μm 40 V bipolar-CMOS-DMOS (BCD) technique was used to tape out and test the package chip. The chip test results indicate that the chip propagation delay is only 98 ns when the input current of the light source is 10 mA, the chip power supply voltage is 12–40 V, and the input signal frequency is 20 kHz.
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SHI X F , PANG X , ZHU L J , et al . Development of photoelectric integrated single photon avalanche photodiode and front-end circuit based on BCD technology [J]. Opt. Precision Eng. , 2021 , 29 ( 2 ): 267 - 277 . (in Chinese) . doi: 10.37188/OPE.20212902.0267 http://dx.doi.org/10.37188/OPE.20212902.0267
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