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1.中国工程物理研究院 激光聚变研究中心,四川 绵阳 621900
2.清华大学 机械工程系,北京100084
[ "全旭松(1987-),男,贵州德江人,硕士,助理研究员,2012年、2015年于北京理工大学分别获得学士、硕士学位,主要研究方向为光机精密装配与检测。E-mail:quanxusong@126.com" ]
[ "周 海(1969-),男,四川绵阳人,研究员,硕士生导师,1991年于西北工业大学获得学士学位,2004年于四川大学获得硕士学位,主要从事高功率固体激光器的光机精密装校技术以及学科建设,涉及光机精密装配、检测、涂膜、修复、在线洁净安装与运行维护等方面的研究。E-mail: a697097@163.com" ]
收稿日期:2022-11-04,
修回日期:2022-12-17,
纸质出版日期:2023-05-10
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全旭松,独伟锋,褚东亚等.大口径KDP晶体装配附加面形畸变抑制工艺优化[J].光学精密工程,2023,31(09):1347-1356.
QUAN Xusong,DU Weifeng,CHU Dongya,et al.Mounting optimization on large aperture KDP crystal to minimize assembling deformation[J].Optics and Precision Engineering,2023,31(09):1347-1356.
全旭松,独伟锋,褚东亚等.大口径KDP晶体装配附加面形畸变抑制工艺优化[J].光学精密工程,2023,31(09):1347-1356. DOI: 10.37188/OPE.20233109.1347.
QUAN Xusong,DU Weifeng,CHU Dongya,et al.Mounting optimization on large aperture KDP crystal to minimize assembling deformation[J].Optics and Precision Engineering,2023,31(09):1347-1356. DOI: 10.37188/OPE.20233109.1347.
在高功率固体激光装置中,大口径KDP晶体的面形畸变控制是影响终端光学组件倍频转化效率的关键因素之一。为了提高大口径KDP晶体的装配附加面形质量,提出了一种点支撑装配附加面形畸变抑制工艺方法。首先,通过遗传算法对支撑点及其分布进行优化设计。然后,采用有限元分析方法对KDP晶体的装配预紧工艺进行优化设计。最后,开展优化后的装配工艺对KDP晶体装配附加面形畸变的抑制和倍频转换效率的实验验证。实验结果表明:提出的工艺方法对KDP晶体装配附加面形畸变具有良好的抑制效果,实测面形PV值为6.51 μm,二倍频转化效率可达72.6%,且重复装配的一致性良好。该方法大幅提升了晶体倍频效率和远场光斑质量,并在工程上得到应用与推广。
In the high-power laser facility, control of the surface deformation of the large-aperture KDP crystal is the key factor to reduce the frequency-conversion efficiency. To improve the assembling quality of the KDP crystal, a point-supporting process method is proposed for minimizing the assembly deformation. First, a genetic algorithm is used to optimize the support points and their distribution scheme. Second, the finite-element method is used to optimize the assembling preload. Finally, mounting optimization design process experiments are conducted to evaluate the surface deformation and the frequency-doubling conversion efficiency. The experimental results indicate that the proposed method is effective for minimizing the assembling deformation of the KDP crystal; the measured PV value is 6.51 μm, and the measured conversion efficiency of second-harmonic generation reaches 72.6% with excellent assembling repeatability. This result significantly improves the frequency-doubling efficiency and the quality of the far-field spot and has been widely used and promoted in engineering.
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