Ga掺杂ZnO微米棒紫外光探测器的制备与特性

袁兆林; 吴永炜; 余璐瑶; 何剑锋; 徐能昌; 汪雪元; 路鹏飞

doi:10.37188/OPE.20243205.0643

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Ga掺杂ZnO微米棒紫外光探测器的制备与特性

现代应用光学 | 更新时间：2024-03-14

- Ga掺杂ZnO微米棒紫外光探测器的制备与特性
- Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors
- 光学精密工程 2024年32卷第5期页码：643-652
- 作者机构：
  
  1.东华理工大学信息工程学院，江西南昌 330013
  2.东华理工大学软件学院，江西南昌 330013
  3.江西省核地学数据科学与系统工程技术研究中心，江西南昌 330013
- 作者简介：
  
  [ "袁兆林（1976-），男，江西丰城人，博士，副教授，硕士生导师，2008年、2011年于电子科技大学分别获得硕士和博士学位，主要从事光电探测材料与器件方面的研究。E-mail： yzlyx98@sina.com" ]
- 基金信息：
  
  国家自然科学基金资助项目(11865002);江西省自然科学基金资助项目(20212BAB201003);江西省核地学数据科学与系统工程技术研究中心开放基金资助项目(JETRCNGDSS202209);东华理工大学博士科研启动基金资助项目(DHBK2019214);江西省研究生创新研究基金资助项目(YC2021-S624;YC2023-S591)
- DOI：10.37188/OPE.20243205.0643
  中图分类号：
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袁兆林,吴永炜,余璐瑶等.Ga掺杂ZnO微米棒紫外光探测器的制备与特性[J].光学精密工程,2024,32(05):643-652.

YUAN Zhaolin,WU Yongwei,YU Luyao,et al.Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J].Optics and Precision Engineering,2024,32(05):643-652.
袁兆林,吴永炜,余璐瑶等.Ga掺杂ZnO微米棒紫外光探测器的制备与特性[J].光学精密工程,2024,32(05):643-652. DOI： 10.37188/OPE.20243205.0643.

YUAN Zhaolin,WU Yongwei,YU Luyao,et al.Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J].Optics and Precision Engineering,2024,32(05):643-652. DOI： 10.37188/OPE.20243205.0643.

摘要

为了获得高性能和低成本的氧化锌（ZnO）基紫外光探测器，使用Ga掺杂ZnO（ZnO∶Ga）作为光敏层，采用水热法合成了不同Ga掺杂浓度ZnO∶Ga微米棒，Ga与Zn的原子比分别为0%（未掺杂），0.5%，1%，2%和4%。使用X射线衍射仪（XRD）测试所有样品的晶体结构，发现它们都为六方纤锌矿结构的ZnO。采用扫描电子显微镜（SEM）观察它们的形貌，都呈现棒状结构。进一步，制备叉指图案氟掺杂的氧化锡（FTO）导电玻璃基底，将不同Ga掺杂浓度ZnO∶Ga微米棒分别涂覆在FTO上，得到5种简单结构的紫外光探测器，系统研究了它们的性能。结果表明：所有ZnO∶Ga微米棒紫外光探测器对365 nm紫外光表现出良好的响应。其中，1% Ga掺杂ZnO∶Ga微米棒紫外光探测器性能最佳，经计算，在365 nm波长处，它的响应度、增益和比探测率分别为13.13 A/W （5 V），44.63 （5 V），3.31×10

Jones，响应时间和衰减时间分别为12.3 s和36.4 s。说明在ZnO微米棒中进行合适Ga掺杂能有效提高紫外光探测器的性能。该研究有助于基于ZnO∶Ga材料的紫外光探测器及相关器件发展。

Abstract

To achieve high⁃performance

low⁃cost zinc oxide (ZnO)⁃based ultraviolet photodetectors

utilizing Ga⁃doped ZnO (ZnO:Ga) as the photosensitive layer is key. This study synthesized ZnO:Ga microrods with varying Ga doping concentrations (0% [undoped ZnO]

0.5%

and 4%) using a straightforward hydrothermal method. The atomic ratios of Ga to Zn were metic

ulously adjusted. Initial analyses revealed that all samples possessed the hexagonal wurtzite ZnO structure

as confirmed by X⁃ray diffractometry (XRD). Scanning electron microscopy (SEM) showed that the microrods maintained a consistent rod⁃like morphology. Subsequently

these microrods were applied to fluorine⁃doped tin oxide (FTO) glass substrates with interdigital patterns to construct five ultraviolet photodetectors. Their performance was thoroughly evaluated

demonstrating that all devices efficiently responded to 365 nm light. Notably

the photodetector with 1% Ga⁃doped ZnO microrods achieved superior performance

delivering a responsivity of 13.13 A/W

a gain of 44.63

and a specific detectivity of 3.31×10

Jones at 365 nm. Its response and decay times were recorded at 12.3 s and 36.4 s

respectively. These findings suggest that an optimal Ga concentration can significantly enhance the performance of ZnO⁃based ultraviolet photodetectors. This research contributes valuable insights for the development of advanced ultraviolet photodetectors and related devices utilizing ZnO:Ga materials.

关键词

紫外光探测器镓掺杂氧化锌微米棒水热法响应度

Keywords

ultraviolet photodetectorGa-doped ZnOmicrorodshydrothermal methodresponsivity

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