高功率半导体激光器列阵封装引入应变的测量

王 烨; 张 岩; 秦 莉; 刘 云; 王立军

doi:10.3788/OPE.20101809.1951

您当前的位置：

首页 >

文章列表页 >

高功率半导体激光器列阵封装引入应变的测量

现代应用光学 | 更新时间：2020-08-12

- 高功率半导体激光器列阵封装引入应变的测量
- Measurement of packaging-induced strain in high power diode laser bar
- 光学精密工程 2010年18卷第9期页码：1951-1958
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态开放实验室,吉林长春130033
- 作者简介：
- 基金信息：
  
  吉林省科技厅重大项目(No.20075001)();吉林省科技发展计划资助项目(No.20086011)();装备预先研究项目(No.61501060108)()
- DOI：10.3788/OPE.20101809.1951
  中图分类号： TN248.4
- 收稿日期：2009-11-23，
  
  修回日期：2009-12-11，
  
  网络出版日期：2010-09-29，
  
  纸质出版日期：2010-09-20
- 稿件说明：
移动端阅览
王烨, 张岩, 秦莉, 刘云, 王立军. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学精密工程, 2010,18(9): 1951-1958

WANG Ye, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun. Measurement of packaging-induced strain in high power diode laser bar[J]. 光学精密工程, 2010,18(9): 1951-1958
王烨, 张岩, 秦莉, 刘云, 王立军. 高功率半导体激光器列阵封装引入应变的测量[J]. 光学精密工程, 2010,18(9): 1951-1958 DOI： 10.3788/OPE.20101809.1951.

WANG Ye, ZHANG Yan, QIN Li, LIU Yun, WANG Li-jun. Measurement of packaging-induced strain in high power diode laser bar[J]. 光学精密工程, 2010,18(9): 1951-1958 DOI： 10.3788/OPE.20101809.1951.

摘要

考虑高功率半导体激光器列阵在封装过程中引入的封装应变会影响激光器的功率、波长和可靠性

对激光器封装应变的测量进行了研究。基于激光器输出光的偏振度变化可反映激光器有源区中量子阱的带隙变化

采用电致发光谱法推导了高功率半导体激光器输出的偏振度值与有源区应变值的关系。对800 nm GaAsP/GaInP高功率半导体激光器列阵有源区的应变进行了测量

测量结果与有限元模拟计算结果吻合较好。与理论计算出的有源区固有应变的对比结果显示

激光器芯片在封装过程中受到铜热沉的压缩

会将封装应变引入到有源区中

并且激光器中间的封装应变大于边缘的封装应变。另外

激光器有源区的应变起伏比较明显

认为这是由于采用电镀方法制备的铟焊接层中存在缺陷。测量得到的最大封装应变为1.37010

-3

缺陷密度为40.8%。得到的结果表明

激光器偏振度的测量能够正确反映激光器的缺陷和封装应变值

进而可以有效衡量激光器封装质量的好坏。

Abstract

As the strain caused by the packaging process of a diode laser influences on the output power

wavelength and the reliability of the high power diode laser bar

this paper researches the measurement of packaging-induced stain in the laser. On the basis of the variation of polarization degree of the output lights in the diode laser can reveal the variation of band edges of the quantum wells in active region of the diode laser bar

it deduces the dependence of the polarization degree of laser outputs on the packaging-induced stain by using electro-luminescent spectroscopy. The strain in active region of a 800 nm GaAsP/GaInP high power diode laser bar is studied and the experimental results are in good agreement with the theoretical simulation. Furthermore

the experimental results are compared with the original strain in active region of the diode laser bar

and it is found that the bar is compressed by the copper heat sink during the packaging process

and the packaging strain is induced in the active region. The packaging-induced strain at the center of the laser bar is higher than the one at the edges. Moreover

the experimental strain of the bar shows more variation apparently

which can be considered as that the defects are created in the indium solder layer fabricated by electrolytic deposition method. In the experiment

the maximum strain is 1.37010

-3

and the defect density is 40.8%.Obtained results demonstrate that the polarization degree measurement of the diode lasers can reveal the defects and the packaging-induced strains of diode lasers accurately and can well evaluate their qualities.

关键词

Keywords

references

李隆,董武威,史彭,等. 激光二极管阵列侧泵浦Nd:YAG板条的热效应

. 光学精密工程,2008,16(11):2120-2126. LI L,DONE W W,SHI P,et al.. Thermal effect of diode bar side-pumped Nd : YAG slab

.Opt. Precision Eng., 2008,16(11):2120-2126.(in Chinese)

宋晏蓉,胡江海,周劲峰,等. 半导体可饱和吸收镜调Q的Yb: LSO激光器

. 中国激光,2006,33(10):1298-1230. SONG Y R, HU J H, ZHOU J F, et al.. Laser diode-pumped Q-switched Yb∶LSO laser with a semiconductor saturable absorber mirror

. Chinese Journal of Lasers, 2006,33(10):1298-1230.(in Chinese)

MA X Y, LI Z. Advances in high power semiconductor diode lasers

. SPIE, 2007, 6824:682402-1- 682402-16.

顾媛媛,冯广智,单肖楠,等. 808nm和980nm半导体激光迭阵波长耦合技术

. 光学精密工程,2009,17(1):8-13. GU Y Y, FENG G Z,SHAN X N,et al.. 808 nmand 980 nm high power laser diode stack with wavelength coupling

. Opt. Precision Eng., 2009,17(1):8-13. (in Chinese)

赵崇光,宁永强,刘洋,等. 双包层Yb/Er共掺光纤放大器的数值模拟

. 光学精密工程,2008,16(8):1349-1353. ZHAO C G,NING Y Q, LIU Y, et al.. Numerical analysis of Yb/ Er co2doped double cladding fiber amplifier

. Opt. Precision Eng., 2008,16(8):1349-1353. (in Chinese)

XIA R, LARKINS E C, HARRISON I, et al.. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

. IEEE Photon. Technol. Lett, 2002,14(7):893-895.

MARTIN P, LANDESMAN J P, MARTIN E, et al.. Micro-photoluminescene mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

.SPIE, 2000,3945:308-316.

TOMM J W, M LLER R, B RWOLFF A, et al.. Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices

. Appl. Phys. Lett, 1998,73(26):3908-3910.

TOMM J W, M LLER R, B RWOLFF A, et al.. Spectroscopic measurement of packaging-induced strains in quantum well laser diodes

. J. Appl. Phys, 1999,86(3):1196-1201.

TOMM J W, B?RWOLFF A, ELSAESSER T, et al.. Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

. Appl. Phys. Lett, 2000,77(5):747-749.

TOMM J W, GERHARDT A, ELSAESSER T, et al.. Simultaneous quantification of strain and defects in high-power diode laser devices

. Appl. Phys. Lett, 2002,81(17):3269-3271.

TOMM J W, GERHARDT A, LORENZEN D, et al.. Diode laser testing by taking advantage of its photoelectric properties

. SPIE, 2002,4648:9-21.

GERHARDT A, WEIL F, QUOCTRAN T, et al.. Device deformation during low-frequency pulsed operation of high-power diode bars

. Appl. Phys. Lett, 2004,84(18):3525-3527.

TOMM J W, QUOCTRAN T, ZIEGLER M, et al.. Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars

. SPIE, 2007,6456:645606-1-645606-7.

TOMM J W, GERHARDT A, M?LLER R, et al.. Spatially resolved spectroscopic strain measurements on high-power laser diode bar

. J. Appl. Phys, 2003,93(3):1354-1362.

拉里A科尔德伦,斯科特 W科尔津.二极管激光器与集成光路

. 史寒星译.北京:北京邮电大学出版社,2006. COLDREN L A, CORZINE S W. Diode lasers and photonic integrated circuits

. SHI X H translated, 2006. (in Chinese)

杜宝勋.半导体激光器原理

. 北京:兵器工业出版社,2004. DU B X. The Principle of Diode Lasers

. Beijing: Weapons & Industry, 2004. (in Chinese)

浏览量

606

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相衬光学相干层析的薄膜全场力学测量方法

相衬光学相干弹性成像的超分辨应变测量

基于硅基液晶拼接的高对比度动态星模拟器光学系统

激光加工用5 kW光纤耦合半导体激光器

埋入式光纤布拉格光栅传感器封装结构对测量应变的影响