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1. 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033
2. 中国科学院 研究生院,北京 100039
收稿日期:2010-09-26,
修回日期:2010-10-27,
网络出版日期:2010-11-25,
纸质出版日期:2010-11-25
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郭亮, 吴清文, 颜昌翔, 刘巨, 陈立恒, 朴仁官. 光谱成像仪CCD组件的稳态/瞬态热分析与验证[J]. 光学精密工程, 2010,18(11): 2375-2383
GUO Liang, WU Qing-wen, YAN Chang-xiang, LIU Ju, CHEN Li-heng, PIAO Ren-guan. Thermal analysis and verification of CCD components in spectral imagers at steady and transient states[J]. Editorial Office of Optics and Precision Engineering, 2010,18(11): 2375-2383
郭亮, 吴清文, 颜昌翔, 刘巨, 陈立恒, 朴仁官. 光谱成像仪CCD组件的稳态/瞬态热分析与验证[J]. 光学精密工程, 2010,18(11): 2375-2383 DOI: 10.3788/OPE.20101811.2375.
GUO Liang, WU Qing-wen, YAN Chang-xiang, LIU Ju, CHEN Li-heng, PIAO Ren-guan. Thermal analysis and verification of CCD components in spectral imagers at steady and transient states[J]. Editorial Office of Optics and Precision Engineering, 2010,18(11): 2375-2383 DOI: 10.3788/OPE.20101811.2375.
针对光谱成像仪CCD器件温度过高产生的热噪声和暗电流会导致成像质量下降
对CCD组件进行了稳态/瞬态热分析。采用有限元数值分析方法
建立了CCD组件传热的数值模型。根据CCD组件的结构特点和导热路径
应用有限元热分析软件IDEAS-TMG建立了有限元热分析模型
在给定温度边界条件下对CCD组件进行了稳态和瞬态仿真分析。给出了CCD组件的热响应性能、组件中关键部件的稳态温度分布云图以及随时间变化的瞬态温度曲线。稳态分析结果表明
CCD器件工作过程中的平均温度水平为27.1℃;瞬态分析结果表明CCD器件在工作时的升温速率为2.5℃/min
最高温度为37.8℃。验证试验结果与数值分析结果吻合较好
验证了数值分析的正确性和温度预示的有效性。稳态试验过程中CCD器件的温度为26.8℃
瞬态试验过程中温升速率为2.4℃/min。所获得的稳态和瞬态分析结果能够满足热控指标要求
为提高CCD组件的可靠性和热设计优化提供了理论依据。
As the thermal noise and dark-currents caused by the temperature increment of CCD components will degrade the imaging quality of spectral imagers
a numerical analysis model for the heat transfer in a CCD component was established by the finite element analysis method. According to the design feature and heat transfer path in the CCD component
the numerical simulation thermal analysis model of the CCD component was built by a finite element thermal analysis software IDEAS-TMG. Based on the given temperature boundary condition
the thermal analysis of CCD component on steady and transient states was carried out. The thermal response performance of CCD component
steady-state temperature profile and the transient temperature curves of key parts in the CCD component were given. The steady-state thermal analysis shows that the averaged temperature value of CCD device is 27.1 ℃ and the transient thermal analysis shows that the temperature rise coefficient is 2.5 ℃/min
and the highest temperature is 37.8℃. These results are coincident with the analysis results well
and verifies the correctness of numerical simulation and the validity of temperature prediction.Furthermore
the averaged temperature value and the temperature rise coefficient of CCD device on steady and tranisient tests are 26.8 ℃ and 2.4 ℃/min respectively
which demonstrates the results obtained can meet the requirements of heat control
and can supply theoretical warrants for the reliability and optimization of thermal design.
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