用于热机械微纳加工的掺Al多晶硅加热器

荣皓; 赵钢; 褚家如

doi:10.3788/OPE.20111901.0124

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用于热机械微纳加工的掺Al多晶硅加热器

微纳技术与精密机械 | 更新时间：2020-08-12

- 用于热机械微纳加工的掺Al多晶硅加热器
- Al doped poly-Si micro-heater for thermomechanical fabrication of micro/nano structure
- 光学精密工程 2011年19卷第1期页码：124-131
- 作者机构：
  
  中国科学技术大学精密机械与精密仪器系,安徽合肥,230027
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.50805137)()
- DOI：10.3788/OPE.20111901.0124
  中图分类号： TN305
- 收稿日期：2010-03-26，
  
  修回日期：2010-06-22，
  
  网络出版日期：2011-01-22，
  
  纸质出版日期：2011-01-22
- 稿件说明：
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荣皓, 赵钢, 褚家如. 用于热机械微纳加工的掺Al多晶硅加热器[J]. 光学精密工程, 2010,19(1): 124-131

RONG Hao, ZHAO Gang, CHU Jia-ru. Al doped poly-Si micro-heater for thermomechanical fabrication of micro/nano structure[J]. Editorial Office of Optics and Precision Engineering, 2010,19(1): 124-131
荣皓, 赵钢, 褚家如. 用于热机械微纳加工的掺Al多晶硅加热器[J]. 光学精密工程, 2010,19(1): 124-131 DOI： 10.3788/OPE.20111901.0124.

RONG Hao, ZHAO Gang, CHU Jia-ru. Al doped poly-Si micro-heater for thermomechanical fabrication of micro/nano structure[J]. Editorial Office of Optics and Precision Engineering, 2010,19(1): 124-131 DOI： 10.3788/OPE.20111901.0124.

摘要

针对热机械式微纳米结构的加工

提出了一种以掺Al多晶硅为材料

集成于微悬臂梁上的加热器。采用Al诱导退火晶化(AIC)方法

在750 K对Al/a-Si∶H复合薄膜低温晶化18 h

制备出掺Al多晶硅。通过低温退火

使复合薄膜的拉曼特征峰由478 cm

-1

移至520 cm

-1

完成由非晶硅向多晶硅的转变;由四探针仪测得室温下样品的电阻率由退火前的10

cm降至16.810

-3

实现了多晶硅的Al掺杂;在扫描电镜下观测到退火后Al与a-Si∶H层的界限消失并形成一层均匀的薄膜;这些结果表明得到了晶化程度很高的Al掺杂多晶硅。继而研究了掺Al多晶硅与氮化硅悬臂梁的集成工艺

采用微加工方法将掺Al多晶硅制成微加热器。使用ANSYS软件仿真加热器的工作过程

在10 V

0.3 s脉冲驱动下

加热器升温至782.8 K

降温时间约1 s。仿真分析显示

采用AIC法制得的掺Al多晶硅具有良好的热电特性

符合用于对高分子材料进行热机械微纳加工的微加热器的性能要求。

Abstract

For thermomechanical fabrication of the micro/nano structure

a micro-heater made of Al doped poly-Si was fabricated. The Al doped poly-Si film was prepared by annealing from Al/a-Si∶H compound film under 750 K for 18 h on a Si

substrate using Aluminium Induced Crystallization (AIC) process

and the characteristics of the transformation caused by annealing were analyzed by Raman scattering spectroscopy

scanning electron microscopy and a resistivity meter. It was shown that the boundary between an Al layer and an a-Si∶H layer disappears after annealing

and a uniform film is formed. After annealing

the Raman spectral peak shifts from 478 cm

-1

to 520 cm

-1

which means the film surface changes from the a-Si∶H to the highly-crystallized poly-Si. Meanwhile

the resistivity of the film declined is from over 10

cm to 16.810

-3

cm at 300 K for doping of Al atoms. The results indicate that the bilayer film (Al/a-Si∶H) has been changed into a uniform Al doped highly-crystallized ploy-Si film. Furthermore

the integration of the Al doped poly-Si micro-heater and Si

cantilever was also discussed. Simulated by ANSYS

the micro-heater is heated to 782.8 K under a periodic electrical pulse with a voltage of 10 V and duration of 0.3 s. When the pulse disappears

its temperature cools down to 420 K within 1 s. The simulation results show that the Al doped poly-Si micro-heater has good thermoelectric properties

and it is well suitable for the thermomechanical micro/nano structure fabrication.

关键词

Keywords

references

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