掺硫硒化镓晶体在太赫兹波段的光学特性

罗志伟; 古新安; 朱韦臻; 唐维聪; ANDREEV YURY; LANSKII Grigory; MOROZOV Alexander; ZUEV Vladimir

doi:10.3788/OPE.20111902.0354

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掺硫硒化镓晶体在太赫兹波段的光学特性

现代应用光学 | 更新时间：2020-08-12

- 掺硫硒化镓晶体在太赫兹波段的光学特性
- Optical properties of GaSe∶S crystals in terahertz frequency range
- 光学精密工程 2011年19卷第2期页码：354-359
- 作者机构：
  
  1. 交通大学电子物理系,中国新竹 30010
  2. Institute of Monitoring of Climatic and Ecological Systems of Siberian Branch of Russian Academy of Sciences, Tomsk Russia
- 作者简介：
- 基金信息：
  
  国际合作计划资助项目(No.NSC96-2923-M-009-001-MY3)()
- DOI：10.3788/OPE.20111902.0354
  中图分类号： TN304.2
- 收稿日期：2010-10-08，
  
  修回日期：2010-10-31，
  
  网络出版日期：2011-02-22，
  
  纸质出版日期：2011-02-22
- 稿件说明：
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罗志伟, 古新安, 朱韦臻, 唐维聪, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. 掺硫硒化镓晶体在太赫兹波段的光学特性[J]. 光学精密工程, 2011,19(2): 354-359

LUO Zhi-wei, GU Xin-an, ZHU Wei-chen, TANG Wei-cong, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. Optical properties of GaSe∶S crystals in terahertz frequency range[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 354-359
罗志伟, 古新安, 朱韦臻, 唐维聪, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. 掺硫硒化镓晶体在太赫兹波段的光学特性[J]. 光学精密工程, 2011,19(2): 354-359 DOI： 10.3788/OPE.20111902.0354.

LUO Zhi-wei, GU Xin-an, ZHU Wei-chen, TANG Wei-cong, ANDREEV YURY, LANSKII Grigory, MOROZOV Alexander, ZUEV Vladimir. Optical properties of GaSe∶S crystals in terahertz frequency range[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 354-359 DOI： 10.3788/OPE.20111902.0354.

摘要

利用太赫兹时域光谱技术测量了掺硫硒化镓(GaSe

)晶体在太赫兹波段的光学参数

包括折射系数、吸收系数等。使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形

对不同硫掺杂量的硒化镓晶体进行了研究

在硫的掺杂量为0

0.01

0.14

0.26

0.37时

在0.2~2.0 THz测得了GaSe

的折射系数、吸收系数等光学参数。此外还在吸收光谱上观察到

(2)

和

(2)

两个声子振动模态

其强度与频率会随着硫的掺杂量而改变

且即使是微量的硫掺杂也会影响吸收光谱上的声子振动模态。最后

在相位匹配ee-e的条件下

模拟了利用锁模钛蓝宝石激光使此类晶体产生太赫兹辐射的可能性。

Abstract

The frequency-dependent optical constants of GaSe∶S crystals

refractive indexes

and obsorption conficients

were measured by using the terahertz time-domain spectroscopy. By the temporal-profile measurements of the terahertz pulse

the ordinary refractive index and absorption coefficients of GaSe

(

0.01

0.14

0.26

0.37) crystals in the range of 0.2-2.0 THz were obtained directly. The vibration modes of two phonons (

(2)

and

(2)

) on the absorption spectra were measured

in which their intensities and frequencies change with the doped amounts of sulfur. Furthermore

for the first time to our knowledge

the possibility of ee-e down-conversion in the THz range was demonstrated by a simulation.

关键词

Keywords

references

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