170ps激光脉冲辐照可见光面阵Si-CCD的实验

蔡跃; 叶锡生; 马志亮; 王立君; 冯国斌; 陈林柱

doi:10.3788/OPE.20111902.0457

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170ps激光脉冲辐照可见光面阵Si-CCD的实验

现代应用光学 | 更新时间：2020-08-12

- 170ps激光脉冲辐照可见光面阵Si-CCD的实验
- Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD
- 光学精密工程 2011年19卷第2期页码：457-462
- 作者机构：
  
  西北核技术研究所激光与物质相互作用国家重点实验室,陕西西安,710024
- 作者简介：
- 基金信息：
  
  激光与物质相互作用国家重点实验室基金资助项目(No. SKL110906)()
- DOI：10.3788/OPE.20111902.0457
  中图分类号： TN249
- 收稿日期：2010-10-08，
  
  修回日期：2010-10-30，
  
  网络出版日期：2011-02-22，
  
  纸质出版日期：2011-02-22
- 稿件说明：
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蔡跃, 叶锡生, 马志亮, 王立君, 冯国斌, 陈林柱. 170ps激光脉冲辐照可见光面阵Si-CCD的实验[J]. 光学精密工程, 2011,19(2): 457-462

CAI Yue, YE Xi-sheng, MA Zhi-liang, WANG Li-jun, FENG Guo-bin, CHEN Lin-zhu. Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 457-462
蔡跃, 叶锡生, 马志亮, 王立君, 冯国斌, 陈林柱. 170ps激光脉冲辐照可见光面阵Si-CCD的实验[J]. 光学精密工程, 2011,19(2): 457-462 DOI： 10.3788/OPE.20111902.0457.

CAI Yue, YE Xi-sheng, MA Zhi-liang, WANG Li-jun, FENG Guo-bin, CHEN Lin-zhu. Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J]. Editorial Office of Optics and Precision Engineering, 2011,19(2): 457-462 DOI： 10.3788/OPE.20111902.0457.

摘要

开展了532 nm ps激光辐照面阵Si-CCD的实验研究

建立了532 nm

170 ps激光辐照Si-CCD效应实验测量系统

观察到了各种典型的干扰和损伤效应现象并测量了阈值。对破坏后的CCD 器件的微观结构进行了显微观察

并深入分析了各种典型实验现象和电路层面的损伤机理。开展了10 ns和150 fs激光对CCD探测器的辐照效应实验

并对不同脉宽激光与CCD相互作用阈值的关系进行了比较分析。实验结果表明:激光能量密度为10

-8

~10

-3

J/cm

时

会干扰CCD成像;激光能量密度超过10

-1

J/cm

时

则会出现CCD永久性损伤。

Abstract

A measurement system was established to study the laser pulse irradiation effects on a plane array Si-CCD at the wavelength of 532 nm and the pulse duration of 170 ps. Experiments on Si-CCD under picosecond laser irradiation were carried out

the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. Furthermore

the microstructure of damaged CCD was observed

and the damage mechanism was analyzed. It was demonstrated that the most severe failures could result from the malfunction of CCD circuits. Experiments on a Si-CCD by laser pulses at the wavelength of 532 nm

800 nm and the pulse duration in 10 ns

150 fs were carried out

respectively

then the thresholds with different pulse durations were measured and compared. Experimental results indicate that the Si-CCD is disturbed when the laser energy density is between 10

-8

-10

-3

J/cm

and the permanent damage of Si-CCD is observed when laser energy density is larger than 10

-1

J/cm

关键词

Keywords

references

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