电场作用下染料掺杂液晶器件的激光辐射

岱钦; 乌日娜; 杨健; 徐送宁; 全薇

doi:10.3788/OPE.20111907.1510

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电场作用下染料掺杂液晶器件的激光辐射

现代应用光学 | 更新时间：2020-08-12

- 电场作用下染料掺杂液晶器件的激光辐射
- Laser emission of dye-doped liquid crystal devices under applying voltage
- 光学精密工程 2011年19卷第7期页码：1510-1514
- 作者机构：
  
  沈阳理工大学理学院,辽宁沈阳 110159
- 作者简介：
- 基金信息：
  
  国家自然基金资助项目(No.60777011)();辽宁省自然科学基金资助项目(No.20102191)();辽宁省教育厅科技项目(No.L2010465)()
- DOI：10.3788/OPE.20111907.1510
  中图分类号： TN141;TN241
- 收稿日期：2010-07-15，
  
  修回日期：2010-09-13，
  
  网络出版日期：2011-07-25，
  
  纸质出版日期：2011-07-25
- 稿件说明：
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岱钦, 乌日娜, 杨健, 徐送宁, 全薇. 电场作用下染料掺杂液晶器件的激光辐射[J]. 光学精密工程, 2011,19(7): 1510-1514

DAI Qin, WU Ri-na, YANG Jian, XU Song-ning, QUAN Wei. Laser emission of dye-doped liquid crystal devices under applying voltage[J]. Editorial Office of Optics and Precision Engineering, 2011,19(7): 1510-1514
岱钦, 乌日娜, 杨健, 徐送宁, 全薇. 电场作用下染料掺杂液晶器件的激光辐射[J]. 光学精密工程, 2011,19(7): 1510-1514 DOI： 10.3788/OPE.20111907.1510.

DAI Qin, WU Ri-na, YANG Jian, XU Song-ning, QUAN Wei. Laser emission of dye-doped liquid crystal devices under applying voltage[J]. Editorial Office of Optics and Precision Engineering, 2011,19(7): 1510-1514 DOI： 10.3788/OPE.20111907.1510.

摘要

通过在向列相液晶TEB30A中掺杂激光染料DCM和手性剂CB15制作了平面排列态液晶器件。采用Nd∶YAG倍频532 nm波段激光作为泵浦光源

测量分析了平行于液晶器件表面方向的受激辐射光谱。当泵浦光较弱时

观察到了染料DCM较宽的荧光辐射谱;随着泵浦光的逐渐增强

辐射谱带逐渐变窄

辐射峰中心波长约为610 nm

最小半峰全宽(FWHM)为11 nm。观察了在器件玻璃基板上施加交流电场后激光辐射的变化情况

结果显示

当外加电压<9 V时

辐射强度随着电压的增大逐渐减弱;当外加电压>9 V

辐射强度迅速衰减

谱线变宽

显示了较好的电场控制特性。文章认为这种现象主要是由于电场作用下液晶分子取向发生变化所致。

Abstract

A planar texture device was prepared by doping a laser dye (DCM) and a chiral compound (CB15) into a nematic liquid crystal TEB30A. By using a second harmonic

-switched Nd∶YAG pulsed laser (=532 nm) as pumping source

the emission spectrum of the device surface in the horizontal direction was measured and analyzed. It shows that a wide emission spectrum can be observed when the pump light is weak. With the increase of pump light

the stimulated emission spectrum is narrowed

and its center wavelength with a least Full Width of Half Maximum (FWHM)about 11 nm is at 610 nm. Moreover

by applying a AC voltage along the perpendicular direction to the surface of the device

the laser emission was also observed.When the applying voltage is less than 9 V

the lasing intensity is weakened with the increase of the voltage.When the applying voltage is greater than 9 V

the emission intensity is decreased sharply. These results can be attributed to the liquid crystal alignment changed on the applying electric field.

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Keywords

references

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