紫外临边成像光谱仪CCD电路系统的设计

马庆军; 宋克非; 曲艺; 王淑荣

doi:10.3788/OPE.20111907.1538

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紫外临边成像光谱仪CCD电路系统的设计

现代应用光学 | 更新时间：2020-08-12

- 紫外临边成像光谱仪CCD电路系统的设计
- Design of CCD circuit systems for ultraviolet limb imaging spectrometers
- 光学精密工程 2011年19卷第7期页码：1538-1545
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
- 作者简介：
- 基金信息：
  
  国家863高技术研究发展计划资助项目(No.2009AA12Z151)()
- DOI：10.3788/OPE.20111907.1538
  中图分类号： TN386.5;TH744.1
- 收稿日期：2010-10-14，
  
  修回日期：2010-12-31，
  
  网络出版日期：2011-07-25，
  
  纸质出版日期：2011-07-25
- 稿件说明：
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马庆军, 宋克非, 曲艺, 王淑荣. 紫外临边成像光谱仪CCD电路系统的设计[J]. 光学精密工程, 2011,19(7): 1538-1545

MA Qing-jun, SONG Ke-fei, QU Yi, WANG Shu-rong. Design of CCD circuit systems for ultraviolet limb imaging spectrometers[J]. Editorial Office of Optics and Precision Engineering, 2011,19(7): 1538-1545
马庆军, 宋克非, 曲艺, 王淑荣. 紫外临边成像光谱仪CCD电路系统的设计[J]. 光学精密工程, 2011,19(7): 1538-1545 DOI： 10.3788/OPE.20111907.1538.

MA Qing-jun, SONG Ke-fei, QU Yi, WANG Shu-rong. Design of CCD circuit systems for ultraviolet limb imaging spectrometers[J]. Editorial Office of Optics and Precision Engineering, 2011,19(7): 1538-1545 DOI： 10.3788/OPE.20111907.1538.

摘要

提出一种用于紫外临边成像光谱仪模数分离成像电路的系统设计方案

该方案避免了CCD模拟输出信号的板间传输和数字信号对模拟信号的干扰

使CCD信号处理电路的噪声水平达到了模拟前端数据手册中给出的2 LSB的性能指标。考虑CCD57-10 BI AIMO没有抗溢出结构

在饱和之前会发生电荷溢出现象

提出了临界溢出电子数的概念以取代饱和电子数

并通过增加转移时钟电压以加深势阱深度的方法

将临界溢出电子数从3.010

提高到了6.010

保证了探测器可正确探测设计范围内的强光信号。为了实现更短的曝光时间以增加动态范围

在时序设计中引入了多次电荷倾倒的思想

在不降低探测器动态范围的前提下

将最短曝光时间由163 ms降低到了19 ms

实现了10

系统动态范围的设计指标。

Abstract

For ultraviolet limb imaging spectrometers

a system-level design scheme of the imaging circuit featured by analog-digital separation was presented to avoid the CCD output analog signal transferring between the boards and the interference of digital signals to analog signals.As a result

a 2 LSB noise performance of the CCD signal processing circuit is achieved

which is exactly coincident with the noise specification on the Analog Front End(AFE) datasheet. As the CCD57-10 BI AIMO has no anti-blooming structure and its charges will overflow before getting saturated

a concept about the critical blooming electron counts was defined to replace the saturation electron counts. By raising the high level voltage of CCD transfer clock signals to improve the depth of potential well

the critical blooming electron counts are increased from 3010

to 6010

which ensures the highest intensity light signal in the designing range to be correctly detected. To take shorter exposure time to expand dynamic range

the idea of multiple charge-dumping was introduced into the design of drive timing. Without sacrificing the dynamic range of the detector

the minimum exposure time is brought down as small as 19 ms

which is almost an order magnitude lower than that of traditional CCD and ensures the system dynamic range design of 10

关键词

Keywords

references

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