980 nm高功率垂直腔面发射激光列阵的单元结构优化

张星; 宁永强; 曾玉刚; 秦莉; 刘云; 王立军

doi:10.3788/OPE.20111909.2014

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980 nm高功率垂直腔面发射激光列阵的单元结构优化

现代应用光学 | 更新时间：2020-08-12

- 980 nm高功率垂直腔面发射激光列阵的单元结构优化
- Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array
- 光学精密工程 2011年19卷第9期页码：2014-2022
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.10974012,60876036,90923037,11074247,61006054,6117045,51172225,611060
- DOI：10.3788/OPE.20111909.2014
  中图分类号： TN248.4
- 收稿日期：2010-12-31，
  
  修回日期：2011-01-25，
  
  网络出版日期：2011-09-26，
  
  纸质出版日期：2011-09-26
- 稿件说明：
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张星, 宁永强, 曾玉刚, 秦莉, 刘云, 王立军. 980 nm高功率垂直腔面发射激光列阵的单元结构优化[J]. 光学精密工程, 2011,19(9): 2014-2022

ZHANG Xing, NING Yong-qiang, ZENG Yu-gang, QIN Li, LIU Yun, WANG Li-Jun. Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2014-2022
张星, 宁永强, 曾玉刚, 秦莉, 刘云, 王立军. 980 nm高功率垂直腔面发射激光列阵的单元结构优化[J]. 光学精密工程, 2011,19(9): 2014-2022 DOI： 10.3788/OPE.20111909.2014.

ZHANG Xing, NING Yong-qiang, ZENG Yu-gang, QIN Li, LIU Yun, WANG Li-Jun. Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array[J]. Editorial Office of Optics and Precision Engineering, 2011,19(9): 2014-2022 DOI： 10.3788/OPE.20111909.2014.

摘要

为了提高980 nm垂直腔面发射激光器(VCSEL)列阵的整体性能

对列阵单元器件的分布布拉格反射镜(DBR)的反射率进行了优化。分析了DBR的反射率与阈值电流

输出功率及转换效率之间的关系

在维持较低阈值电流的前提下适当调节了N-DBR的反射率

使单元器件斜率效率得到了有效提高

进而改善了VCSEL列阵的整体输出特性。优化DBR反射率后研制出的包含64个单元的VCSEL列阵器件在注入电流为6 A时的连续输出功率为2.73 W;在脉宽为100 ns

重复频率为100 Hz的130 A脉冲电流驱动下输出功率达到115 W;包含300个单元的列阵器件在注入电流为18 A时

连续输出功率达到5.26 W。对N-DBR反射率进行优化后

VCSEL列阵的整体输出特性得到了有效改善。

Abstract

The reflectivity of a Distributed Bragg Reflector (DBR) was optimized to improve the output characteristics of a 980 nm Vertical-cavity Surface-emitting Laser (VCSEL) array.The relationship among the reflectivity of N-DBR

threshold current

output power and wall-plug efficiency was analyzed.Then

the reflectivity of N-DBR was adjusted to achieve higher slope efficiency in a relative low threshold current and to improve the overall output characteristics of the VCSEL array.After N-DBR reflectivity optimization

the developed VCSEL array including 64 elements can offer a CW output power of 2.73 W under the injected current of 6 A and a pulse output power of 115 W under the pulse drive current of 130 A

a pulse width of 100 ns and a repetition frequency of 100 Hz. Furthermore

the VCSEL array including 300 elements can provide a CW output power of 5.26 W under the injected current of 18 A. It concludes that the performance of VCSEL array has been improved by N-DBR reflectivity optimization.

关键词

Keywords

references

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