大功率垂直腔面发射激光器列阵的串接结构

史晶晶; 秦莉; 刘迪; 彭航宇; 曹军胜; 杨晔; 宁永强; 刘云; 王立军

doi:10.3788/OPE.20111910.2309

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大功率垂直腔面发射激光器列阵的串接结构

现代应用光学 | 更新时间：2020-08-12

- 大功率垂直腔面发射激光器列阵的串接结构
- High-power vertical cavity surface emitting laser array in series structure
- 光学精密工程 2011年19卷第10期页码：2309-2313
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金重点项目(No.90923037)();吉林省科技发展计划资助项目(No.20080335)()
- DOI：10.3788/OPE.20111910.2309
  中图分类号： TN248.1
- 收稿日期：2010-12-31，
  
  修回日期：2011-02-17，
  
  网络出版日期：2011-10-27，
  
  纸质出版日期：2011-10-25
- 稿件说明：
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史晶晶, 秦莉, 刘迪, 彭航宇, 曹军胜, 杨晔, 宁永强, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的串接结构[J]. 光学精密工程, 2011,19(10): 2309-2313

SHI Jing-jing, QIN Li, LIU Di, PENG Hang-yu, CAO Jun-sheng, YANG Ye, NING Yong-qiang, LIU Yun, WANG Li-jun. High-power vertical cavity surface emitting laser array in series structure[J]. Editorial Office of Optics and Precision Engineering, 2011,19(10): 2309-2313
史晶晶, 秦莉, 刘迪, 彭航宇, 曹军胜, 杨晔, 宁永强, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的串接结构[J]. 光学精密工程, 2011,19(10): 2309-2313 DOI： 10.3788/OPE.20111910.2309.

SHI Jing-jing, QIN Li, LIU Di, PENG Hang-yu, CAO Jun-sheng, YANG Ye, NING Yong-qiang, LIU Yun, WANG Li-jun. High-power vertical cavity surface emitting laser array in series structure[J]. Editorial Office of Optics and Precision Engineering, 2011,19(10): 2309-2313 DOI： 10.3788/OPE.20111910.2309.

摘要

为了在不提高驱动电流的前提下增大垂直腔面发射激光器的输出功率

提出了一种将多个垂直腔面发射激光器芯片串接在一起的结构。首先

将垂直腔面发射激光器芯片焊接在氮化铝陶瓷热沉上

接着用金丝引线的方法以串联方式将芯片连接在一起。分别测试了串接4个、2个和单个芯片器件的微秒脉冲输出功率和纳秒脉冲输出功率

其分别为775

416

217 mW和18.9

9.8

5 W

测试结果显示串接4个和2个芯片器件的输出功率分别约为单个芯片输出功率的4倍和2倍。串接多个芯片器件的发射光谱半高宽(FWHM)比单个器件的略宽

但是可以通过选择均一性良好的芯片来解决这一问题。实验显示

串接结构可以实现在不提高驱动电流的条件下大幅度提高输出功率。

Abstract

For increasing the output powers without improving drive currents to high power Vertical Cavity Surface Emitting Lasers(VCSELs)

a VCSEL in series structure was presented. First

the VCSEL chips were soldered on a AlN ceramic heat sink

then the chips were connected by a wire bonding in series. The output powers of four-chip devices in series

two-chip devices in series and a single device were measured under microsecond and nanosecond pulses

which are 775

416

217 mW and 18.9

9.8

5 W

respectively. Test results show that the output powers of the first two kinds of devices in series are about 4 times and twice that of the single device. Moreover

the Full Width at Half Maximum(FWHM) of multiple-chip devices in series is slightly wider than that of the single device

which can be improved by choosing good uniformity cascade chips. In conclusion

the VCSEL in series structure can increase the output power without improving the drive current.

关键词

Keywords

references

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