用于分布反馈光栅的纳米压印模板制作

王定理; 刘文; 周宁; 徐智谋

doi:10.3788/OPE.20111911.2731

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用于分布反馈光栅的纳米压印模板制作

微纳技术与精密机械 | 更新时间：2020-08-12

- 用于分布反馈光栅的纳米压印模板制作
- Nanoimprint stamp fabrication for DFB gratings
- 光学精密工程 2011年19卷第11期页码：2731-2735
- 作者机构：
  
  1. 武汉光迅科技股份有限公司,湖北武汉,430074
  2. 华中科技大学武汉光电国家实验室,湖北武汉,430074
  3. 新一代光纤通信技术和网络国家重点实验室,湖北武汉,430074
- 作者简介：
- 基金信息：
  
  国家863高技术研究发展计划资助项目(No.2009AA03Z418)()
- DOI：10.3788/OPE.20111911.2731
  中图分类号： TN305.7
- 收稿日期：2010-11-03，
  
  修回日期：2011-01-29，
  
  网络出版日期：2011-11-25，
  
  纸质出版日期：2011-11-25
- 稿件说明：
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王定理, 刘文, 周宁, 徐智谋. 用于分布反馈光栅的纳米压印模板制作[J]. 光学精密工程, 2011,19(11): 2731-2735

WANG Ding-li, LIU Wen, ZHOU Ning, XU Zhi-mou. Nanoimprint stamp fabrication for DFB gratings[J]. Editorial Office of Optics and Precision Engineering, 2011,19(11): 2731-2735
王定理, 刘文, 周宁, 徐智谋. 用于分布反馈光栅的纳米压印模板制作[J]. 光学精密工程, 2011,19(11): 2731-2735 DOI： 10.3788/OPE.20111911.2731.

WANG Ding-li, LIU Wen, ZHOU Ning, XU Zhi-mou. Nanoimprint stamp fabrication for DFB gratings[J]. Editorial Office of Optics and Precision Engineering, 2011,19(11): 2731-2735 DOI： 10.3788/OPE.20111911.2731.

摘要

高质量、低成本的压印模板的获得是采用纳米压印技术制作分布反馈光栅的难点

本文采用双层金属掩模及lift-off金属剥离方法制作了适用于紫外压印技术的石英基压印模板。首先

采用电子束光刻技术在镀钛的石英基片表面直写出DFB光栅的光刻胶图形

接着

在其表面溅射一层金属镍并进行金属剥离得到与光刻胶相对的图形

最后采用电感耦合等离子体(ICP)干法刻蚀技术将光栅图形转移到石英基片上

并对模板的表面进行了防粘连处理。所制作的DFB光栅压印模板周期为200 nm

光栅中间具有/4相移结构

适用于1 310 nm波长的相移型DFB半导体激光器光栅的制作。

Abstract

It is difficult to obtain a nanoimprint stamp with low cost and high quality in fabrication of Distributed Feedback(DFB)gratings. In this paper

the quartz stamp for semiconductor DFB gratings was fabricated by using double-layer metal mask and lift-off lithography. Firstly

the photoresist pattern of a DFB grating was written on a Ti coated quartz substrate by electron beam lithography

then a layer of metal Ni was sputtered on it to obtain a corresponding pattern by metal lift-off technology. Finally

the Inductively Coupled Plasma(ICP)dry etching was used to transfer the pattern on the quartz substrate. The scanning electron microscope image of the fabricated stamp shows good uniformity with sufficiently low line edge roughness. The stamp is suitable to fabricate DFB grating for 1 310 nm semiconductor laser diodes using UV nanoimprint lithography.

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references

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