850 nm 垂直腔面发射激光器列阵

史晶晶; 秦莉; 宁永强; 刘云; 张金龙; 曹军胜; 王立军

doi:10.3788/OPE.20122001.0017

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850 nm 垂直腔面发射激光器列阵

现代应用光学 | 更新时间：2020-08-12

- 850 nm 垂直腔面发射激光器列阵
- 850 nm vertical cavity surface-emitting laser arrays
- 光学精密工程 2012年20卷第1期页码：17-23
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金重点项目(No.90923037,No.20100352)();吉林省科技发展计划资助项目(No.20080335)();苏州市科技发展计划资助项目(N
- DOI：10.3788/OPE.20122001.0017
  中图分类号： TN248.1
- 收稿日期：2011-04-11，
  
  修回日期：2011-05-26，
  
  网络出版日期：2012-01-25，
  
  纸质出版日期：2012-01-25
- 稿件说明：
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史晶晶, 秦莉, 宁永强, 刘云, 张金龙, 曹军胜, 王立军. 850 nm 垂直腔面发射激光器列阵[J]. 光学精密工程, 2012,20(1): 17-23

SHI Jing-jing, QIN Li, NING Yong-qiang, LIU Yun, ZHANG Jin-long, CAO Jun-sheng, WANG Li-jun. 850 nm vertical cavity surface-emitting laser arrays[J]. Editorial Office of Optics and Precision Engineering, 2012,20(1): 17-23
史晶晶, 秦莉, 宁永强, 刘云, 张金龙, 曹军胜, 王立军. 850 nm 垂直腔面发射激光器列阵[J]. 光学精密工程, 2012,20(1): 17-23 DOI： 10.3788/OPE.20122001.0017.

SHI Jing-jing, QIN Li, NING Yong-qiang, LIU Yun, ZHANG Jin-long, CAO Jun-sheng, WANG Li-jun. 850 nm vertical cavity surface-emitting laser arrays[J]. Editorial Office of Optics and Precision Engineering, 2012,20(1): 17-23 DOI： 10.3788/OPE.20122001.0017.

摘要

为了解决垂直腔面发射激光器(VCSEL)列阵中金丝难以键和和电流注入不均匀的问题

提出了一种非闭合型VCSEL列阵结构。该结构通过腐蚀非闭合环形凹槽形成器件台面

从而简化了工艺步骤

减少了器件的损伤。分别对22

44阵列的850 nm 非闭合型顶发射VCSEL器件进行了测试和分析

结果显示其室温连续输出功率分别达到80

140和480 mW;阈值电流分别为0.15

0.25和0.4 A;平行方向和垂直方向上的远场发散角分别为9和9.6

13.5和14.4

15和14.4。在脉宽为50 s、重复频率为100 Hz 时

最大输出功率分别为90

318和1 279 mW;阈值电流分别为0.2

0.5和0.7 A。分别测试了芯片在封装前后的功率曲线

发现芯片在封装之后的热饱和电流要远远高于封装之前

从而说明良好的封装技术可以提高器件的散热效率

降低器件内部发热对器件性能的影响。

Abstract

To improve the wire bonding and homogeneous injecting currents

this paper proposes a Vertical Cavity Surface-emitting Laser (VCSEL) array with a non-closed structure. In this structure

a non-closed groove is etched to form a mesa for simplifying the processing and reducing the damage of devices. The 850 nm VCSEL arrays (including 22

33 and 44 array devices) with the non-closed type top emission structures are tested and analyzed. Results show that the continuous output powers are up to 80

140 and 480 mW at room temperature

threshold currents are 0.15

0.25 and 0.4 A

and the far-field divergence angles in parallel and vertical directions are 9 and 9.6

13.5and 14.4

15 and 14.4

respectively. In the context of a pulse width of 50 s and a pulse repetition rate of 100 Hz

the maximum output powers are 90

318 and 1 279 mW and the threshold currents are 0.2

0.5 and 0.7 A

respectively. The power curves of chips are tested before and after packaged. The result shows that the heat saturation current of the chip after packaged is much higher than that of the chip before packaged

which suggests that good packaging can improve the cooling efficiency and reduce the effect of internal heating on the device performance.

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references

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