准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜

张健; 林广平; 张睿; 崔国宇; 李传南

doi:10.3788/OPE.20122001.0058

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准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜

现代应用光学 | 更新时间：2020-08-12

- 准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜
- Fabrication of large grain size p-Si film by phase modulated excimer laser crystallization
- 光学精密工程 2012年20卷第1期页码：58-63
- 作者机构：
  
  吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家973重点基础研究发展计划资助项目(No.2010CB327701)();吉林省科技厅支撑计划重点资助项目(No.20093056)()
- DOI：10.3788/OPE.20122001.0058
  中图分类号： TN305.7;TN304.055
- 收稿日期：2011-06-17，
  
  修回日期：2011-07-29，
  
  网络出版日期：2012-01-25，
  
  纸质出版日期：2012-01-25
- 稿件说明：
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张健, 林广平, 张睿, 崔国宇, 李传南. 准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜[J]. 光学精密工程, 2012,20(1): 58-63

ZHANG Jian, LIN Guang-ping, ZHANG Rui, CUI Guo-yu, LI Chuan-nan. Fabrication of large grain size p-Si film by phase modulated excimer laser crystallization[J]. Editorial Office of Optics and Precision Engineering, 2012,20(1): 58-63
张健, 林广平, 张睿, 崔国宇, 李传南. 准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜[J]. 光学精密工程, 2012,20(1): 58-63 DOI： 10.3788/OPE.20122001.0058.

ZHANG Jian, LIN Guang-ping, ZHANG Rui, CUI Guo-yu, LI Chuan-nan. Fabrication of large grain size p-Si film by phase modulated excimer laser crystallization[J]. Editorial Office of Optics and Precision Engineering, 2012,20(1): 58-63 DOI： 10.3788/OPE.20122001.0058.

摘要

为扩大晶粒尺寸并降低晶粒间界缺陷对多晶硅薄膜晶体管的不良影响

采用准分子激光相位掩模法制备了大晶粒尺寸的多晶硅薄膜。首先

在无相位掩模时利用不同能量密度的准分子激光晶化非晶硅薄膜

通过扫描电镜观测晶粒尺寸确定超级横向生长的能量窗口;然后

在该能量密度下采用周期为1 073 nm的相位掩模板对入射光束进行相位调制

在样品表面形成人工可控的横向温度梯度

使非晶硅熔化并横向生长结晶为多晶硅;最后

对薄膜特性进行测量

并与非晶硅薄膜和超级横向生长制备的多晶硅薄膜进行比较。结果表明:本文方法制作的薄膜的平均晶粒尺寸提高了一个数量级

达到了228.24 nm;薄膜电阻率降低一个数量级

为18.9 m;且晶粒分布规则有序。该方法能有效提高多晶硅薄膜的电学特性

适用于高质量多晶硅薄膜器件的制作。

Abstract

To enlarge the grain size and decrease the effect of the defect between the grain boundaries on a p-Si film transistor

a phase modulated excimer laser crystallization technique is used to fabricate the uniform p-Si film with a large grain size. First

an energy window for super lateral growth is determined by measuring the grain size of p-Si film fabricated with different laser energy intensities. Then

the spatial distribution of the input laser is modulated by a phase mask with a period of 1 073 nm and an artificially controlled lateral temperature gradient is induced on the a-Si film

which leads the a-Si to be melten and crystallized into p-Si grains by super lateral growth. Finally

the characteristics of the prepared p-Si film are measured and compared with those of the a-Si film and the p-Si film fabricated by super lateral growth technique. The results show that the grain size of the p-Si film is 228.24 nm

which is ten times of that fabricated by super lateral growth under the same processing parameters; the electrical resistivity of the prepared sample is 18.9 m

which is lower by an order magnitude than that prepared by super lateral growth. Furthermore

the distribution of the grain is more uniform than that fabricated by other techniques. The reported technique can increase the electrical characteristics of the p-Si film greatly and is suitable for the fabrication of high quality p-Si devices.

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references

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