单晶蓝宝石的延性研磨加工

戴欣平; 赵萍; 文东辉

doi:10.3788/OPE.20122006.1316

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单晶蓝宝石的延性研磨加工

微纳技术与精密机械 | 更新时间：2020-08-12

- 单晶蓝宝石的延性研磨加工
- Ductile lapping of single crystal sapphire
- 光学精密工程 2012年20卷第6期页码：1316-1324
- 作者机构：
  
  1. 浙江工业大学特种装备制造与先进加工技术教育部重点实验室,浙江杭州,310032
  2. 金华职业技术学院机电工程学院,浙江金华,321017
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.50705088)();教育部科学技术研究重点项目(No.210088)();浙江省新世纪151人才工程资助项目(No.Z1810200
- DOI：10.3788/OPE.20122006.1316
  中图分类号： O786
- 收稿日期：2012-02-15，
  
  修回日期：2012-04-12，
  
  网络出版日期：2012-06-10，
  
  纸质出版日期：2012-06-10
- 稿件说明：
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戴欣平, 赵萍, 文东辉. 单晶蓝宝石的延性研磨加工[J]. 光学精密工程, 2012,20(6): 1316-1324

DAI Xin-ping, ZHAO Ping, WEN Dong-hui. Ductile lapping of single crystal sapphire[J]. Editorial Office of Optics and Precision Engineering, 2012,20(6): 1316-1324
戴欣平, 赵萍, 文东辉. 单晶蓝宝石的延性研磨加工[J]. 光学精密工程, 2012,20(6): 1316-1324 DOI： 10.3788/OPE.20122006.1316.

DAI Xin-ping, ZHAO Ping, WEN Dong-hui. Ductile lapping of single crystal sapphire[J]. Editorial Office of Optics and Precision Engineering, 2012,20(6): 1316-1324 DOI： 10.3788/OPE.20122006.1316.

摘要

为实现单晶蓝宝石的延性研磨加工

采用纳米压痕和划痕法测试并分析了单晶蓝宝石(0001)面的微纳力学特性

建立了单颗圆锥状磨粒的压入模型并计算了延性研磨加工的受力临界条件

分析了金刚石磨粒嵌入合成锡研磨盘表面的效果。对单晶蓝宝石进行了延性研磨加工试验

采用NT9800白光干涉仪、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等方法分析了单晶蓝宝石的延性研磨表面特征。试验结果表明:采用纳米压痕和划痕法可以为单晶蓝宝石的延性研磨加工提供工艺参数

单晶蓝宝石的延性堆积的极限深度为100 nm

金刚石磨粒的嵌入及在适当载荷下可以实现蓝宝石的延性研磨加工

实验条件下的最佳载荷为21 kPa

延性研磨后单晶蓝宝石表面划痕深度的分布情况较好

分散性小

研磨后的表面发生了位错滑移变形。

Abstract

To achieve the ductile lapping of a single crystal sapphire

micro/nano mechanic characteristics of the sapphire (0001) plane were measured by nanoindentation and nanoscratch methods. The indentation model of single cone abrasive grain was proposed and then critical force conditions were deduced during ductile lapping process. Experimental studies were conducted for the single crystal sapphire based on the diamond abrasive grain charging into a synthetic tin plate

and characteristics of ductile lapped surface were measured by a NT9800 white light interferometer

a Scan Emission Microscopy(SEM) and a Transmission Electron Microscopy(TEM). Experimental results show that nanoindentation and nanoscratch methods can provide processing parameters for the ductile lapping of single crystal sapphires

and its critical depth of pile-up is around 100 nm for sapphire nanoindentation. The ductile lapping of the single crystal sapphire can be implemented by charging into diamond abrasive grains and selecting proper loads and the optimal load for ductile lapping is 21 kPa. After ductile lapping

the surface scratch depth of single crystal sapphire shows a smaller dispersion and the dislocation and slip are formed on the lapped surface.

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