闪耀全息光栅离子束刻蚀工艺模拟及实验验证

吴娜; 谭鑫; 巴音贺希格; 唐玉国

doi:10.3788/OPE.20122009.1904

您当前的位置：

首页 >

文章列表页 >

闪耀全息光栅离子束刻蚀工艺模拟及实验验证

现代应用光学 | 更新时间：2020-08-12

- 闪耀全息光栅离子束刻蚀工艺模拟及实验验证
- Simulation and experiments of ion beam etching process for blazed holographic grating
- 光学精密工程 2012年20卷第9期页码：1904-1912
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  863"();重大项目(No.2010AA1221091001)();国家重大科研装备研制项目(No.ZBYZ2008-1)();中国科学院重大科研装备研制项目
- DOI：10.3788/OPE.20122009.1904
  中图分类号： 0436.1;TN305.7
- 收稿日期：2012-04-23，
  
  修回日期：2012-08-15，
  
  纸质出版日期：2012-09-10
- 稿件说明：
移动端阅览
吴娜, 谭鑫, 巴音贺希格, 唐玉国. 闪耀全息光栅离子束刻蚀工艺模拟及实验验证[J]. 光学精密工程, 2012,20(9): 1904-1912

WU Na, TAN Xin, Bayanheshig, TANG Yu-guo. Simulation and experiments of ion beam etching process for blazed holographic grating[J]. Editorial Office of Optics and Precision Engineering, 2012,20(9): 1904-1912
吴娜, 谭鑫, 巴音贺希格, 唐玉国. 闪耀全息光栅离子束刻蚀工艺模拟及实验验证[J]. 光学精密工程, 2012,20(9): 1904-1912 DOI： 10.3788/OPE.20122009.1904.

WU Na, TAN Xin, Bayanheshig, TANG Yu-guo. Simulation and experiments of ion beam etching process for blazed holographic grating[J]. Editorial Office of Optics and Precision Engineering, 2012,20(9): 1904-1912 DOI： 10.3788/OPE.20122009.1904.

摘要

依据特征曲线法推导了非晶体表面的离子束刻蚀模拟方程

结合全息光栅的刻蚀特点开发出离子束刻蚀模拟程序

并通过实验数据分析并优化了非晶体材料刻蚀速率与离子束入射角的关系方程

最后利用离子束刻蚀实验对所开发的离子束刻蚀模拟程序进行了实验验证。调节掩模与基底材料的刻蚀速率比为2∶1至1∶2

制作了线密度为1 200 l/mm

闪耀角为~8.6

非闪耀角为34~98的4种闪耀光栅

与刻蚀模拟程序的结果进行对比

模拟误差<5%;控制离子束刻蚀时间为6~14 min

制作了线密度为1 200 l/mm

闪耀角为~8.6

顶角平台横向尺寸为0~211 nm的6种光栅

与刻蚀模拟程序的模拟结果进行对比

模拟误差<1%。比较实验及离子束刻蚀模拟结果表明

离子束刻蚀模拟程序获得的模拟刻蚀轮廓曲线与实际刻蚀轮廓曲线的误差<5%;模拟刻蚀截止点与实际刻蚀截止点误差<1%。实验表明

提出的模拟方程可以准确地描述不同工艺过程和工艺参数对最终刻蚀结果的影响

进而可预知和控制离子束刻蚀过程。

Abstract

A simulation equation of surface etching for amorphous materials during ion beam etching was worked out based on the characteristic curve method

and a simulation program named BLAZING for the ion etching process was established according to the holographic grating.Then

the relation between the etching rate of amorphous materials and ion beam incidence was analyzed and optimized. Finally

an experiment was carried out to verify the simulation program with the ion beam etching. By adjusting the etching rate ratio from 2∶1 to 1∶2 for a mask and substrate materials

four 1 200 l/mm blazed gratings with the right angle between 34and 98and the blazed angle about 8.6 were fabricated

and the simulation error between the experimental data and the simulation data is less than 5%. By controlling the etching time from 6 min to 14 min

six 1 200 l/mm blazed gratings with the ridge between 0 nm and 211 nm and the same blazed angle of 8.6 were fabricated

and the error mentioned above is less than 1%. The contrast results illustrate that the error of contour line between simulation and experimentation is less than 5%

and the error of etching ending time between simulation and experimentation is less than 1%. It concludes that the simulation program BLAZING can simulate the effect of different etching processes and different parameters on the etching results

and can predict and control the ion beam etching process.

关键词

Keywords

references

WEHNER G. Influence of the angle of incidence on sputtering yields[J].J. Appl. Phys., 1959,30(10):1762-1765.[2] DUCOMMUN J P, CANTAGREL M. Evolution of well-defined sureface contour submitted to ion bombardment[J]. J. Mater. Sci, 1975,10(7):52-62.[3] JOHNSON L F. Evolution of grating profiles under ion-beam erosion[J]. Appl.Opt.,1979,18(15):2259-2574.[4] AOYAGI Y, NAMBA S. Blazed ion-etched holographic gratings[J]. Opt. Acta.,1976,23(9): 701-707.[5] 庄夔,刘桂琴,李永贵. 全息光栅[J]. 光学精密工程,1981, 12(5): 226-230. ZHUANG X, LIU G Q, LI Y G,Holographic Gratings[J],Opt. Precision Eng., 1981, 12(5): 226-230. (in Chinese)[6] HUTLEY M C. Diffraction Gratings [M]. Academic, New York, 1982.[7] TAN X, LIU Y, LIU ZH K. Performance of a soft X-ray splitter grating parallelism measuring system by diffraction method[J]. Journal of Functional Materials and Devices, 2009, 24(15): 61-65.[8] LIU Y, TAN X, LIU ZH K. Soft X-ray holographic grating beam splitter including a double frequency grating for interferometer pre-alignment[J]. Optics Express, 2008, 18(16):14761-14770.[9] 谭鑫,刘颖,徐向东,等. 13.9 nm Laminar分束光栅的研制[J]. 光学精密工程,2009, 17(1):33-37. TAN X, LIU Y, XU X D, et al..13.9 nm Laminar grating as beam splitter[J]. Opt. Precision Eng., 2009, 17(1):33-37.(in Chinese)[10] LIN H, LI L F. Fabrication of extreme-ultraviolet blazed gratings by use of direct argonoxygen ion-beam etching through a rectangular photoresist mask[J]. Appl. Opt.,2008,33(47): 6212-6218.[11] OLDHAM W G, NEUREUTHER A R, SUNG C, et al.. A general simulator for VISI lithography and etching process:Part ii- Application to deposition and etching[J].IEEE Trans Electron Devices, 1980,45(27): 1455-1465.[12] MCVITTIE J P J, REY C, CHENG L Y, et al.. LPCVD profile simulation using a Re-emission model[J]. IEDM 90, 1990, 245(19): 917-920.[13] ZHOU R C, ZHANG H X, HAO Y Y, et al.. Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF6／C4F8[J]. MEMS 03, 2003, 27(16): 161-164.[14] 谭鑫,李文昊,巴音贺希格,等.紫外全息闪耀光栅的制作[J], 光学精密工程,2010,18(7):1536-1544. TAN X, LI W H, Bayanheshig, et al.. Fabrication of the ultraviolet holographic blazed grating [J]. Opt. Precision Eng., 2010, 18(7):1536-1544.(in Chinese)[15] TAN X. Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask[J]. SPIE, 2011, 8191: 1117-1129.

浏览量

645

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

宽波段全息-离子束刻蚀光栅的设计及工艺

基于解析分区法设计闪耀全息凹面光栅

紫外全息闪耀光栅的制作

用于飞秒激光制备光纤光栅的相位掩模研制

闪耀透射光栅衍射规律的分析和验证