纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用

王加贤; 林正怀; 张培; 吴志军

doi:10.3788/OPE.20132101.0020

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纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用

现代应用光学 | 更新时间：2020-08-12

- 纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用
- Nonlinear optical properties of nanometer semiconductor compound films and their applications to lasers
- 光学精密工程 2013年21卷第1期页码：20-25
- 作者机构：
  
  华侨大学信息科学与工程学院,福建泉州,362021
- 作者简介：
- 基金信息：
  
  微纳尺度微腔激光器及量子效应研究();纳米Si复合薄膜非线性光学效应的增强及应用于光开关的研究();硅基光电子材料的微观结构设计与性能预测研究()
- DOI：10.3788/OPE.20132101.0020
  中图分类号：
- 收稿日期：2012-09-03，
  
  修回日期：2012-10-29，
  
  网络出版日期：2013-01-24，
  
  纸质出版日期：2013-01-15
- 稿件说明：
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王加贤林正怀张培吴志军. 纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用[J]. 光学精密工程, 2013,21(1): 20-25

WANG Jia-xian LIN ZHeng-pei ZHANG Pei WU ZHi-jun. Nonlinear optical properties of nanometer semiconductor compound films and their applications to lasers[J]. Editorial Office of Optics and Precision Engineering, 2013,21(1): 20-25
王加贤林正怀张培吴志军. 纳米半导体复合薄膜的非线性光学性质及其在激光器中的应用[J]. 光学精密工程, 2013,21(1): 20-25 DOI： 10.3788/OPE.20132101.0020.

WANG Jia-xian LIN ZHeng-pei ZHANG Pei WU ZHi-jun. Nonlinear optical properties of nanometer semiconductor compound films and their applications to lasers[J]. Editorial Office of Optics and Precision Engineering, 2013,21(1): 20-25 DOI： 10.3788/OPE.20132101.0020.

摘要

采用射频磁控溅射技术制备了Ge掺二氧化硅（Ge-SiO

）和Ge，Al共掺二氧化硅（Ge/Al-SiO

）两种复合薄膜，并进行了热退火处理形成了纳米Ge镶嵌结构。通过紫外-可见吸收谱测量，确定了两种薄膜中纳米Ge的光学带隙，并采用皮秒激光

-扫描技术研究了薄膜的非线性光学性质。测试结果显示，在1 064 nm激发下得到的Ge-SiO

和Ge/Al-SiO

薄膜的非线性吸收系数分别为-1.2310

-7

m/V和4.3510

-8

m/W，前者为饱和吸收，而后者为双光子吸收。把两种薄膜作为可饱和吸收体均可实现1.06 m激光的被动调

和被动锁模运转。与Ge-SiO

薄膜比较，采用Ge/Al-SiO2薄膜可以获得较窄的调

脉冲和锁模脉冲。最后，理论分析和实验比较了两种薄膜实现被动调Q和锁模的机理。

Abstract

The Ge-SiO

and Ge/Al-SiO

compound films were prepared by Radio-Frequency (RF) magnetron sputtering technique

and then Ge nanocrystals were obtained in the films by a thermal annealing treatment. The optical bandgaps of the Ge nanocrystals in the two films were calculated by measured UV-visible absorption spectral data

and the nonlinear optical properties of the two compound films were investigated by using picosecond laser

-scan technique. Experiments show that the nonlinear absorption coefficients of Ge-SiO

and Ge/Al-SiO

films at 1 064 nm lasing are -1.2310

-7

m/V and 4.3510

-8

m/W

respectively. The former corresponds to the saturable absorption

while the latter corresponds to the two-photon absorption. Furthermore，both the GeSiO

and Ge/Al-SiO

films can be as the saturable absorbers to implement the passive

-switching and mode-locking operation for a 1.06 m laser. Obtained experimental results demonstrate that Ge/Al-SiO

film could achieve narrower

-switched pulse and mode-locked pulse than that of the Ge-SiO

film. Finally

it discusses the mechanisms of passive

-switching and passive mode-locking with the two films.

关键词

Keywords

references

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