硅拉曼激光器的设计与典型应用

李文超; 张景茹; 孙宇超; 朱丹丹; 李志全

doi:10.3788/OPE.20132102.308

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硅拉曼激光器的设计与典型应用

现代应用光学 | 更新时间：2020-08-12

- 硅拉曼激光器的设计与典型应用
- Design and typical application of silicon Raman laser
- 光学精密工程 2013年21卷第2期页码：308-315
- 作者机构：
  
  东北大学秦皇岛分校控制工程学院2. 河北山海关电站辅机厂技术部3. 燕山大学电气工程学院
- 作者简介：
- 基金信息：
  
  教育部高等学校博士学科点专项科研基金资助项目()
- DOI：10.3788/OPE.20132102.308
  中图分类号： TN248.7;O657.319
- 收稿日期：2012-07-17，
  
  修回日期：2012-10-29，
  
  网络出版日期：2013-02-23，
  
  纸质出版日期：2013-02-15
- 稿件说明：
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李文超张景茹孙宇超朱丹丹李志全. 硅拉曼激光器的设计与典型应用[J]. 光学精密工程, 2013,21(2): 308-315

LI Wen-chao ZHANG Jing-ru SUN Yu-chao ZHU Dan-dan LI Zhi-quan. Design and typical application of silicon Raman laser[J]. Editorial Office of Optics and Precision Engineering, 2013,21(2): 308-315
李文超张景茹孙宇超朱丹丹李志全. 硅拉曼激光器的设计与典型应用[J]. 光学精密工程, 2013,21(2): 308-315 DOI： 10.3788/OPE.20132102.308.

LI Wen-chao ZHANG Jing-ru SUN Yu-chao ZHU Dan-dan LI Zhi-quan. Design and typical application of silicon Raman laser[J]. Editorial Office of Optics and Precision Engineering, 2013,21(2): 308-315 DOI： 10.3788/OPE.20132102.308.

摘要

针对用光腔衰荡法测量气体浓度时存在严重非线性光学损耗，输出功率密度偏低，光源输出不平坦等问题

利用受激拉曼散射（SRS）非线性频移机制，设计了以Si元素作为拉曼主要增益介质的拉曼激光器。在硅波导结构中设置了p-i-n反向偏置电压，通过控制调节该电压值来降低由双光子吸收（TPA）引起的自由载流子吸收（FCA）以及由FCA引起的非线性光学损耗，从而提高拉曼激光器的输出功率。在实验分析处理过程中，将反向电压分别设置为开路、短路、5 V以及25 V4种状态，分析比较了不同电压值下激光器输出功率的变化规律。实验结果显示：粒子自由迁移时间从16 ns降低到1 ns，表明输出功率在同等标准下得以显著提高，进而改善了气体浓度测量的稳定性。

Abstract

For the serious nonlinear optical loss

low output power density and non-flat light source in gas concentration measurement by a Cavity Ring-down Spectroscope(CRDS)

a Raman laser by using Si as gain media was designed based on the nonlinear frequency shift mechanism of stimulated Raman scattering. To reduce the Two-photon Absorption (TPA) induced Free-carrier Absorption (FCA) and the FCA induced nonlinear optical loss in the silicon

a reversed p-i-n diode was designed to embed in a silicon waveguide.Then

the output power of Raman laser could be enhanced by controlling the voltage. In the experimental analysis

the reversed voltage was set to open

short

5V and 25V

respectively

to observe the output power under the different voltages. The result indicates that the free carrier mobility time decreases from 16 ns to 1 ns and the output power increases outstandingly at the same condition

which enhances the reliability of gas concentration measurement.

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references

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