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中国科学院 光电技术研究所,四川 成都,610209
收稿日期:2012-08-24,
修回日期:2012-12-14,
网络出版日期:2013-04-20,
纸质出版日期:2013-04-15
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郭春 李斌成. 用模拟退火法确定MgF<sub>2</sub>薄膜折射率和厚度[J]. 光学精密工程, 2013,21(4): 858-863
GUO Chun LI Bin-cheng. Determination of refractive index and thickness of MgF<sub>2</sub> film using simulated annealing algorithm[J]. Editorial Office of Optics and Precision Engineering, 2013,21(4): 858-863
郭春 李斌成. 用模拟退火法确定MgF<sub>2</sub>薄膜折射率和厚度[J]. 光学精密工程, 2013,21(4): 858-863 DOI: 10.3788/OPE.20132104.0858.
GUO Chun LI Bin-cheng. Determination of refractive index and thickness of MgF<sub>2</sub> film using simulated annealing algorithm[J]. Editorial Office of Optics and Precision Engineering, 2013,21(4): 858-863 DOI: 10.3788/OPE.20132104.0858.
研究了确定单层MgF
2
薄膜的物理厚度及其在深紫外/真空紫外波段折射率的方法。首先,利用钼舟热蒸发工艺在B270基底上制备了单层MgF
2
薄膜。然后,依据MgF
2
单层膜在不同入射角下的反射光谱,采用模拟退火方法确定了MgF
2
薄膜在170~260 nm波段的折射率和物理厚度,并与由椭圆偏振法确定的薄膜参数进行了比较。实验显示,采用模拟退火和椭圆偏振两种方法确定的MgF
2
薄膜厚度分别为248.5 nm和249.5 nm,偏差为0.4%;而用上述两种方法在240~260 nm波段确定的单层MgF
2
薄膜的折射率偏差均小于0.003。得到的结果证实了依据不同入射角下的反射光谱,用模拟退火方法确定MgF
2
薄膜厚度和折射率的可靠性。
This paper focused on the method to determine the physical thickness of a single-layer MgF
2
film and its refractive index in the deep ultraviolet/vacuum ultraviolet spectral ranges. The single-layer MgF
2
film was prepared on the B270 substrate by a Mo boat evaporation method. On the basis of reflectance spectra of the single-layer MgF
2
film at various incidence angles
the refractive index and thickness of the film in 170-260 nm were determined by the simulated annealing algorithm and were compared with those of determined by ellipsometry. Experimental results indicate that the thicknesses of the MgF
2
film are 248.5 nm and 249.5 nm by the simulated annealing algorithm and ellipsometry
respectively
which shows a deviation of 0.4%. Moreover
the refractive indexes of the MgF
2
film at 240-260 nm obtained by two method mentioned above show a deviation less than 0.003. Obtained results prove that the method employing the reflectance spectral and simulated annealing is reliable for determining the refractive index and thickness of the MgF
2
film.
郭春,林大伟,张云洞,等. 光度法确定LaF3薄膜的光学常数[J]. 光学学报, 2011,31: 731001-731007. GUO CH, LIN D W, ZHANG Y D, et al.. Determination of optical constants of LaF3 films from spectrophotometric measurements [J]. Acta Optica Sinica, 2011, 31: 731001-731007. (in Chinese)[2]薛春荣,易葵,齐红基,等. 氟化物材料在深紫外波段的光学常数[J]. 物理学报, 2009, 58: 5035-5040. XUE CH R, YI K, QI H J, et al..Optical constants of fluoride films in the DUV range [J]. Acta Phys. Sin., 2009, 58: 5035-5040. (in Chinese)[3]TIKHONRAVOV A, TRUBETSKOV M, AMOTC-HKINA T, et al.. Reliable determination of wavelength dependence of thin films refractive index [J].SPIE, 2003, 5188:331-342.[4]NIISAKA S, SAITO T, SAITO J, et al.. Development of optical coatings for 157-nm lithography.I. coating materials [J]. Appl. Opt., 2002, 41:3242-3247.[5]WANG J, MAIER R, DEWA P G, et al.. Nanoporous structure of a GdF3 thin film evaluated by variable angle spectroscopic ellipsometry [J]. Appl. Opt., 2007, 46: 3221-3226.[6] LIAO B H, LIU M C, LEE C C, et al.. Process for deposition of AlF3 thin films [J]. Appl. Opt., 2008, 47:C41-45.[7]ZHAO Y, WANG Y, GONG H, et al..Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors [J]. Appl. Surf. Sci., 2003, 210:353-358.[8]晏春愉,高斐,张佳雯,等.用模拟退火算法研究非晶硅薄膜的光学性质[J]. 光学技术, 2009, 35: 492- 495. YAN CH Y, GAO F, ZHANG J W, et al.. Study on the optical properties of amorphous silicon film by simulated annealing algorithm [J]. Optical Technique, 2009, 35:492-495. (in Chinese)[9]刘细成,王植恒,廖清君,等.用透射光谱和模拟退火算法确定薄膜光学常数[J]. 激光技术, 2003, 27: 94-97. LIU X CH, WANG ZH H, LIAO Q J, et al.. Determination of optical constants of thin films by means of transmission spectra and simulated annealing algorithm [J]. Laser Technology, 2003, 27: 94-97. (in Chinese)[10]薛春荣,易葵,邵建达,等.几种氟化物薄膜材料的光学特性[J].光学 精密工程,2009,17:1507-1512. XUE CH R, YI K, SHAO J D, et al.. Optical properties of several fluoride materials [J]. Opt. Precision Eng., 2009, 17:1507-1512. (in Chinese)[11]MASLEOD A H. Thin-Film Optical Filters [M]. 3rd Edition. Institute of Physics Publishing Bristol and Philadelphia, 2001.[12]METROPLIS N, ROSENBLUTH A, ROSENBLUTH M,et al.. Equation of state calculations by fast computing machines [J]. Journal of Chemical Physics, 1953, 21:1087-1092.[13]KIRKPATRICK S, GELATT C D, VECCHI M P. Optimization by simulated annealing [J]. Science , 1983, 220:671-680.
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