用多层掩模去除纳米压印工艺中的残胶

陈鑫; 赵建宜; 王智浩; 王磊; 周宁; 刘文

doi:10.3788/OPE.20132106.1434

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用多层掩模去除纳米压印工艺中的残胶

微纳技术与精密机械 | 更新时间：2020-08-12

- 用多层掩模去除纳米压印工艺中的残胶
- Clearing residual resist in nanoimprint lithography by multi-mask
- 光学精密工程 2013年21卷第6期页码：1434-1439
- 作者机构：
  
  华中科技大学光电子科学与工程学院武汉光电国家实验室2. 新一代光纤通信技术和网络国家重点实验室3. 武汉光迅科技股份有限公司
- 作者简介：
- 基金信息：
  
  国家863项目低成本光纤接入应用的直调16×();2.5Gb/s InP基单片集成OLT端多波长芯片、ONU端收发芯片以及相应的光接入模块()
- DOI：10.3788/OPE.20132106.1434
  中图分类号： TN305.7
- 收稿日期：2013-01-17，
  
  修回日期：2013-03-11，
  
  网络出版日期：2013-06-20，
  
  纸质出版日期：2013-06-15
- 稿件说明：
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陈鑫赵建宜王智浩王磊周宁刘文. 用多层掩模去除纳米压印工艺中的残胶[J]. 光学精密工程, 2013,21(6): 1434-1439

CHEN Xin ZHAO Jian-yi WANG Zhi-hao WANG Lei ZHOU Ning LIU Wen. Clearing residual resist in nanoimprint lithography by multi-mask[J]. Editorial Office of Optics and Precision Engineering, 2013,21(6): 1434-1439
陈鑫赵建宜王智浩王磊周宁刘文. 用多层掩模去除纳米压印工艺中的残胶[J]. 光学精密工程, 2013,21(6): 1434-1439 DOI： 10.3788/OPE.20132106.1434.

CHEN Xin ZHAO Jian-yi WANG Zhi-hao WANG Lei ZHOU Ning LIU Wen. Clearing residual resist in nanoimprint lithography by multi-mask[J]. Editorial Office of Optics and Precision Engineering, 2013,21(6): 1434-1439 DOI： 10.3788/OPE.20132106.1434.

摘要

纳米压印工艺中的压印胶在固化后会发生聚合物的铰链，生成高分子聚合物，很难被一般有机溶剂清除，从而影响器件的性能。为有效去除压印残胶，提出一种利用多层掩模去除残胶的方法。该方法首先在基片和压印胶之间沉积一层50 nm的二氧化硅作为硬掩模；接着用纳米压印工艺将光栅图形转移到压印胶上，再用干法刻蚀将光栅图形转移到基片上；最后，放入BOE （buffered oxide etchant）中漂洗数秒以去除残胶。文中总结了刻蚀底胶时间对光栅占空比的影响，对比了经过多层掩模去残胶和传统去残胶的方法处理后的光栅形貌。电镜图片结果显示，采用本文方法经过漂洗的光栅表面残胶去除干净，形貌良好，其周期约为240 nm，深度约为82 nm。实验表明，多层掩模去残胶的方法不仅能够有效地去除刻蚀残胶，同时能够避免光栅形貌的损坏。

Abstract

When UV-Nanoimprint Lithography(NIL) is used in manufacturing gratings of Distributed Feedback Laser Diodes(DFB LDs)

the resist often turns into a high polymer after curing and can not be eliminated completely. To eliminate the residual resist

a multi-mask layer process was demonstrated. In this process

a 50 nm SiO2 hard mask was deposited between the wafer and the UV-curable resist and then traditional nanoimprint lithography based on soft stamp UV-imprinting was executed. Following that

the Inductively Coupled Plasma(ICP) dry etching was used to transfer the pattern on the substrate. Finally

it was rinsed with Buffered Oxide Etchant(BOE)for a few seconds .The effect of etching time on the duty ratio of grating was explored and the grating morphologies processed by traditional method and proposed method were compared. A scanning electron microscope image of rinsed grating shows that the grating with about 240 nm pitch and 82 nm depth offers a clean surface and a good feature. Therefore. The proposed method not only can eliminate the residual resist effectively but also can avoid the morphologic damage.

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references

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