CCD与CMOS图像传感器辐射效应测试系统

李豫东1; 汪波1; 郭旗1; 玛丽娅1; 任建伟4

doi:10.3788/OPE.20132111.2778

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CCD与CMOS图像传感器辐射效应测试系统

现代应用光学 | 更新时间：2020-08-12

- CCD与CMOS图像传感器辐射效应测试系统
- Testing system for radiation effects of CCD and CMOS image sensors
- 光学精密工程 2013年21卷第11期页码：2778-2784
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院新疆理化技术研究所,新疆乌鲁木齐,830011
  3. 中国科学院大学北京,100039
  4. 中国科学院特殊环境功能材料与器件重点实验室,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
  
  低频振动体系中环境能量捕获的关键问题研究();中科院西部之光西部博士资助项目()
- DOI：10.3788/OPE.20132111.2778
  中图分类号： TN386.5
- 收稿日期：2013-05-03，
  
  修回日期：2013-06-26，
  
  网络出版日期：2013-11-22，
  
  纸质出版日期：2013-11-15
- 稿件说明：
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李豫东, 郭旗, 玛丽娅, 汪波, 任建伟. CCD与CMOS图像传感器辐射效应测试系统[J]. 光学精密工程, 2013,21(11): 2778-2784

LI Shu-Dong, GUO Qi, MA Li-Ya, HONG Bei, LIN Jian-Wei. Testing system for radiation effects of CCD and CMOS image sensors[J]. Editorial Office of Optics and Precision Engineering, 2013,21(11): 2778-2784
李豫东, 郭旗, 玛丽娅, 汪波, 任建伟. CCD与CMOS图像传感器辐射效应测试系统[J]. 光学精密工程, 2013,21(11): 2778-2784 DOI： 10.3788/OPE.20132111.2778.

LI Shu-Dong, GUO Qi, MA Li-Ya, HONG Bei, LIN Jian-Wei. Testing system for radiation effects of CCD and CMOS image sensors[J]. Editorial Office of Optics and Precision Engineering, 2013,21(11): 2778-2784 DOI： 10.3788/OPE.20132111.2778.

摘要

研制了中荷耦合器件（CCD）与互补金属氧化物半导体有源像素图像传感器（CMOS APS）辐射效应测试系统

用于研究CCD、CMOS APS图像传感器的辐射效应并准确评估器件的空间辐射环境适应性。该系统采用光机电一体化结构设计，包括光电响应性能检测、光谱检测、控制及数据处理3个分系统，可对器件的光电响应性能、光谱特性进行全面的定量测试与分析。系统的光谱分辨率为1 nm，工作波段为0.38~1.1 m。目前，该系统与新疆理化所现有的辐照装置结合，构成了光电成像器件辐射效应模拟试验与抗辐射性能评估平台，已为国产宇航CCD与CMOS APS图像传感器的研制、空间应用部门的成像器件选型工作提供了多次考核评估试验。应用情况表明，该系统可定量检测与评价CCD、CMOS APS图像传感器的辐射效应与抗辐射性能，为深入开展光电成像器件的辐射效应研究提供了完善的试验研究条件。

Abstract

A radiation effect test system for Charge Coupled Device(CCD) and Complementary Metal Oxide Semiconductor Transistor Active Pixel Sensor(CMOS APS) image sensors was developed to further study the space radiation effects of these devices and to accurately evaluate their space radiation adaptability. The system is an integrated optic-mechanical-electric equipment

and contains three subsystems for testing photoelectric responses

spectrum response and processing output data. It is able to comprehensively and quantitatively test and analyze the photoelectric response and spectral characteristics of the devices. The system shows its spectrum range and spectrum resolution to be 0.38 to 1.1 m and 1 nm

respectively. The system has been combined with the irradiation facilities in Xinjiang Technical Institute of Physics & Chemistry to constitute a platform for radiation effect simulation experiments and anti-radiation performance evaluation of photo-electronic imaging devices. Currently

the system has provided a strong support for the research &development of domestic anti-radiation CCD and CMOS APS devices

including type-selection

examination and evaluation of imaging devices of space sectors. The results show that this system can satisfy the requirements of radiation effect research on CCD and CMOS devices.

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references

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