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1. 厦门大学 萨本栋微米纳米科学技术研究院,福建 厦门 361005
2. 厦门大学 物理与机电工程学院,福建 厦门,361005
收稿日期:2013-03-14,
修回日期:2013-04-25,
网络出版日期:2013-11-22,
纸质出版日期:2013-11-15
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张翊, 潘峰, 包达群, 王建艳, 郭航. 锆钛酸铅薄膜的生长与表征[J]. 光学精密工程, 2013,21(11): 2893-2899
ZHANG Yi, BO Feng, BAO Da-Qun, WANG Jian-Yan, GUO Hang. Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films[J]. Editorial Office of Optics and Precision Engineering, 2013,21(11): 2893-2899
张翊, 潘峰, 包达群, 王建艳, 郭航. 锆钛酸铅薄膜的生长与表征[J]. 光学精密工程, 2013,21(11): 2893-2899 DOI: 10.3788/OPE.20132111.2893.
ZHANG Yi, BO Feng, BAO Da-Qun, WANG Jian-Yan, GUO Hang. Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films[J]. Editorial Office of Optics and Precision Engineering, 2013,21(11): 2893-2899 DOI: 10.3788/OPE.20132111.2893.
研究了如何利用溶胶凝胶法制备锆钛酸铅(Pb(Zrx
Ti1-x)O3,PZT)薄膜,并对该薄膜的进行了表征测试。根据分子式设计了溶液的成分及配比,配制溶液后旋涂于钛(Ti)及铂/钛(Pt/Ti)基底上。利用X射线衍射仪(XRD)和原子力显微镜(AFM)对不同热处理温度和不同退火温度的PZT薄膜的形貌、成分进行了表征测试。在此基础上,采用微机电系统(MEMS)工艺,开发了可用于测试PZT薄膜材料特性的工艺流程与测试样品。然后,利用标准铁电测试仪对不同热处理温度和不同退火温度的PZT薄膜的极化强度进行了铁电特性测试。结果表明,在400 ℃进行热处理,650 ℃进行退火的条件下制备出的PZT薄膜其成分和形貌比较好,铁电特性较优,能够应用于MEMS器件与纳米器件的制造中。
This paper explores how to prepare the Pb(ZrxTi1-x)O3(PZT) thin films by using the sol-gel method on a silicon substrate
then it tests the film characteristics by different methods. The solution with different compositions and proportions is designed according to the molecular formulas
and then the solution is coated on Titanium (Ti) or Platinum/Titanium (Pt/Ti) substrates. The X-ray diffraction (XRD) analysis is used to characterize the orientation and crystalline quality of the PZT thin films
and the Atomic Force Microscopy(AFM) is used to study their morphologies. The influences of different heat treatment temperatures on the crystalline quality and surface morphology are analyzed. Based on this
a Micro-electro-mechanical System(MEMS) process is developed for the PZT thin film structure to measure their ferroelectric properties
and a sawyer tower circuit is used to measure the polarization electric hysteresis. The results show that PZT thin films prepared by the sol-gel method have good ferroelectric property and morphologies at heat treatment of 400 ℃ and annealing treatment of 650 ℃
and can be applied to the PZT-based MEMS and nano devices.
CHIDAMBARAM N, MAZZALAI A, MURALT P. Comparison of lead zirconate titanate (PZT) thin films for MEMS energy harvester with interdigitated and parallel plate electrodes [C]. Proc. of 2012 IEEE Int. Symp. On Applications of Ferroelectrics, 2012:1-4.[2]MISRI I, HAREESH P, YANG S, et al.. Microfabrication of bulk PZT transducers by dry film photolithography and micro powder blasting[J]. Journal of Micromechanics and Microengineering, 2012, 22(8):085017.[3]CHU J, MENG X. Study on the ferroelectric thin films for uncooled infrared detection [J]. Ferroelectrics, 2007, 352: 12-24.[4]SODANO H A, LLOYD J, INMAN D J. An experimental comparison between several active composite actuators for power generation [J]. Smart Mater. Struct., 2006, 15: 1211-1216.[5]YAMSHITA K, KATATA H, OKUYAMA M, et al.. Arrayed ultrasonic microsensors with high directivity for in-air use using PZT thin film on silicon diaphragms [J]. Sens. Actuators A, 2002, 97-98: 302-307.[6]LIN Y C, CHUANG H A, SHEN J H. PZT thin film by pulsed DC magnetron sputtering [J]. Vacuum, 2009, 83(6): 921-926.[7]XU SH Y, SHI Y, KIM S G. Fabrication and mechanical property of nano piezoelectric fibers[J]. Nanotechnology, 2006, 17:4497-4501.[8]GONG W, LI J F, CHU X C, et al.. Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films [J]. Journal of the European Ceramic Society, 2004, 24: 2977-2982.[9]UPRETY K K, OCOLA L E, AUCIELLO O. Growth and characterization of transparent Pb(Zi,Ti)O3 capacitor on glass substrate [J]. Journal of Applied Physics, 2007, 102(8): 084107-084107-4.[10]KIM S H, PANK D Y, WOO H J, et al.. Orientation effects in chemical solution derived Pb(Zr 0.3, Ti 0.7)O3 thin films on ferroelectric properties[J]. Thin Solid Films, 2002, 416: 264-270.
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