微型铷原子钟专用795 nm垂直腔表面发射激光器

张建; 宁永强; 张建伟; 张星; 曾玉刚; 王立军

doi:10.3788/OPE.20142201.0050

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微型铷原子钟专用795 nm垂直腔表面发射激光器

现代应用光学 | 更新时间：2020-08-13

- 微型铷原子钟专用795 nm垂直腔表面发射激光器
- 795 nm VCSELs for ⁸⁷Rb based miniaturized atomic clock
- 光学精密工程 2014年22卷第1期页码：50-57
- 作者机构：
  
  1. 中国科学院大学北京,中国,100049
  2. 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.61106047, No.51172225)()
- DOI：10.3788/OPE.20142201.0050
  中图分类号： TN248.1
- 收稿日期：2012-09-11，
  
  纸质出版日期：2014-01-15
- 稿件说明：
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张建, 宁永强, 张建伟等. 微型铷原子钟专用795 nm垂直腔表面发射激光器[J]. 光学精密工程, 2014,22(1): 50-57

ZHANG Jian, NING Yong-qiang, ZHANG Jian-wei etc. 795 nm VCSELs for <sup>87</sup>Rb based miniaturized atomic clock[J]. Editorial Office of Optics and Precision Engineering, 2014,22(1): 50-57
张建, 宁永强, 张建伟等. 微型铷原子钟专用795 nm垂直腔表面发射激光器[J]. 光学精密工程, 2014,22(1): 50-57 DOI： 10.3788/OPE.20142201.0050.

ZHANG Jian, NING Yong-qiang, ZHANG Jian-wei etc. 795 nm VCSELs for <sup>87</sup>Rb based miniaturized atomic clock[J]. Editorial Office of Optics and Precision Engineering, 2014,22(1): 50-57 DOI： 10.3788/OPE.20142201.0050.

摘要

针对铷(

Rb)原子钟激励光源微型化和高温工作的特殊需求

设计并制备了对应铷原子能级跃迁的795 nm垂直腔面发射激光器(VCSEL)。首先

根据k·p理论计算了InAlGaAs/AlGaAs量子阱的价带能级和材料增益

得到最优的量子阱组分和厚度;然后

采用一维传输矩阵方法设计了795 nm波段的布拉格反射器(DBR)

根据完整结构VCSEL器件的驻波场分布设计了掺杂分布;最后

采用金属有机气相外延(MOVPE)技术生长了优化的795 nm VCSEL外延结构

并制备了氧化限制型非闭合台面结构的795 nm顶发射器件。实验显示:封装后的75 μm口径器件可在室温至85 ℃范围内连续工作

最高功率为17 mW

激光光束呈圆形

发散角为15°

激射波长的温漂系数为0.064 nm/℃;在温度为52 ℃、注入电流为100 mA时

激射波长位于794.7 nm(对应铷原子钟需要的波长)

基本满足铷原子钟激励光源对波长稳定和高温工作的要求。

Abstract

For the special requirements of the exciting source of a

Rb based atomic clock for the miniaturization and high temperature conditions

a 795 nm Vertical Cavity Surface Emitting Laser(VCSEL)corresponding to the Rb atom energy level transition was designed and fabricated. Firstly

the energy levels and material gains of the InAlGaAs/AlGaAs Multiple Quantum Wells (MQWs) were calculated by the k·p method to optimize the compositions and thicknesses of the quantum wells. Then

a Distributed Bragg Reflectors(DBRs) at 795 nm were designed and their reflection characteristics

longitudinal optical fields and averaged doping profiles were calculated and optimized using a one-dimensional transfer matrix method. Finally

the epitaxial structure of the 795 nm VCSEL with optimized MQWs and DBRs were grown on a GaAs substrate by Metal Organic Vapor Phase Epitaxy (MOVPE) and the oxide-confined 795 nm top-emitting VCSELs with unclosed-mesa structures were fabricated and characterized. Experimental results indicate that the packaged VCSELs can keep lasing under a cw current from 25 ℃ to 85 ℃ with power decreasing from 17 mW to 1.8 mW

the far field profiles are circular with a divergence angle of 15° and the temperature-shift of the lasing wavelength is 0.064 nm/℃. Moreover

the lasing wavelength moves to the wavelength required by

Rb atoms at an ambient temperature of 52 ℃ and a current of 100 mA. The 795 nm VCSELs satisfy the basic requirements of

Rb based miniaturized atom clocks for stable operation in a special wavelength and high-temperatures.

关键词

Keywords

references

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