浏览全部资源
扫码关注微信
南京航空航天大学 机电学院 江苏省精密与微细制造技术重点实验室,江苏 南京,210016
收稿日期:2013-12-05,
修回日期:2014-01-23,
纸质出版日期:2014-04-25
移动端阅览
朱永伟, 王成, 徐俊等. 固结磨料研磨垫孔隙结构对其加工性能的影响[J]. 光学精密工程, 2014,22(4): 911-917
ZHU Yong-wei, WANG Cheng, XU Jun etc. Influence of pore distribution of fixed abrasive pad on its machining performance[J]. Editorial Office of Optics and Precision Engineering, 2014,22(4): 911-917
朱永伟, 王成, 徐俊等. 固结磨料研磨垫孔隙结构对其加工性能的影响[J]. 光学精密工程, 2014,22(4): 911-917 DOI: 10.3788/OPE.20142204.0911.
ZHU Yong-wei, WANG Cheng, XU Jun etc. Influence of pore distribution of fixed abrasive pad on its machining performance[J]. Editorial Office of Optics and Precision Engineering, 2014,22(4): 911-917 DOI: 10.3788/OPE.20142204.0911.
为了解决铜在研磨过程中铜屑黏附减小了容屑空间,易导致研磨垫钝化问题,本文尝试在亲水性固结磨料研磨垫(FAP)内部添加硫酸镁晶体,利用硫酸镁晶体遇水溶解的特性,在研磨垫表面制造不同特征的孔隙。实验在FAP中添加粒径为8目、170目、500目的硫酸镁晶体制造了3种不同孔隙分布的研磨垫,研究了不同加工参数下FAP研磨铜片时的材料去除速率、摩擦系数、表面形貌及磨屑特征。结果表明,仅含170目硫酸镁的FAP与含8目和500目硫酸镁、质量分数分别为5%和10%的FAP在研磨过程中出现了不同程度的钝化,而FAP表现出良好的自修整性能,研磨过程摩擦系数较大且保持平稳;在研磨液流量为60 ml/min时,其材料去除速率为4.46
μ
m/min,表面粗糙度
R
a
为159 nm。
Copper is easy to adhere to the surface of a tool during the process of grinding or lapping
which may decrease the space for chips and lead to the passsivation of a Fixed Abrasive Pad (FAP). To resolve the problem
this paper adds the magnesium sulfate crystal with water dissolved characteristics into the hydrophilic FAP to prepare holes with different characteristics on the surface of the FAP. In this study
different sizes of magnesium sulfate (MgSO
4
) particles (8 mesh
170 mesh and 500 mesh respectively) were added to the FAP to prepare three different FAPs. Material removal rates
friction coefficients
surface topography
and chip characteristics were obtained when lapping copper using different FAPs on different machining parameters. Results show that the FAP contained 170# MgSO
4
particles only and the one contained 8#and 500# MgSO
4
particles with a mass fraction of 10% and 5%
were glazing to some extents during the process of lapping. However
the FAP containing 8# and 500# MgSO
4
particles with a mass fraction of 5% and 10% shows a good self-conditioning performance and its friction coefficient during lapping is larger and stable. With lapping liquid flow rate at 60 ml/min
the material removal rate is 4.46
μ
m/min and the surface roughness
R
a
is 159 nm.
LIN J, LIU Y H, LU X C, et al. Material removal mechanism of copper CMP from a chemical-mechanical synergy perspective[J]. Tribology Letter, 2013, 49: 11-19.
袁巨龙, 王志伟, 文东辉, 等. 超精密加工现状综述[J]. 机械工程学报, 2007, 43(1): 35-48. YUAN J L, WANG ZH W, WEN D H, et al. Review of the current situation of ultra-precision machining[J]. Chinese Journal of Mechanical Engineering, 2007, 43(1):35-48.(in Chinese)
VAN V P. Chemical mechanical polishing with fixed abrasives using different subpads to optimize wafer uniformity[J]. Microelectronic Engineering, 2000, 50:41-46.
王旭, 张峰, 张学军. 固着磨料抛光碳化硅反射镜的去除函数[J]. 精密 光学工程, 2009, 17(5):951-957. WANG X, ZHANG F, ZHANG X J. Removal function of computer controlled polishing SiC mirror with fixed abrasive[J]. Opt. Precision Eng., 2009, 17(5):951-957.(in Chinese)
CHANG O, KIM H, PARK K, et al. Mathematical modeling of CMP conditioning process[J]. Microelectronic Engineering, 2007, 84:577-583.
CHOI J Y, JEONG H D. A study on polishing of molds using hydrophilic fixed abrasive pad[J]. International Journal of Machine Tools and Manufacture, 2004, 44(11):1163-1169.
TATEISHI T, GAO Q, TANI Y, et al. Development of a high-porosity fixed-abrasive pad utilizing catalytic effects of TiO2 on polyurethane matrix[J]. CIRP Annals-Manufacturing Technology, 2006, 55(1):321-324.
KIM H, PARK B, LEE S, et al. Self-conditioning fixed abrasive pad in CMP[J]. Journal of Electrochemical Society, 2004, 151(12):858-862.
KIM H, KIM H, JEONG H, et al. Self-conditioning of encapsulated abrasive pad in chemical mechanical polishing[J]. Journal of Materials Processing Technology, 2003, 142: 614-618.
朱永伟, 付杰, 居志兰, 等. 材料特性对亲水性固结磨料研磨垫加工性能的影响[J]. 纳米技术与精密工程, 2013, 11(1):51-56. ZHU Y W, FU J, JU ZH L, et al. Influence of material characteristics on machining performance of hydrophilic fixed pad[J].Nanotechnology and Precision Engineering, 2013, 11(1):51-56.(in Chinese)
居志兰, 朱永伟, 王建彬, 等. 抛光介质对固结磨料化学机械抛光水晶的影响[J]. 光学 精密工程, 2013, 21(4):955-962. JU ZH L, ZHU Y W, WANG J B, et al.. Effect of slurries on chemical mechanical polishing of decorative glasses by fixed-abrasive pad[J]. Opt. Precision Eng., 2013, 21(4):955-962.(in Chinese)
ZHU P Z, HU Y Z, MA T B, et al. Study of AFM-based nanometric cutting process using molecular dynamics[J]. Applied Surface Science, 2010, 256(23):7160-7165.
BLONDE R, CHAN H L, BONASSO N A, et al. Evolution of texture and microstructure in pulsed electro-deposited Cu treated by Surface Mechanical Attrition Treatment (SMAT)[J]. Journal of Alloys and Compounds, 2010, 504(1):410-413.
ZHANG Z F, YAN W X, ZHANG L, et al. Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing[J]. Microelectronic Engineering, 2011, 88:3020-3023.
0
浏览量
624
下载量
4
CSCD
关联资源
相关文章
相关作者
相关机构