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1. 清华大学 电子工程系 清华信息科学技术国家实验室(筹) 北京,100084
2. 清华大学 深圳研究生院 半导体照明实验室,广东 深圳,518057
收稿日期:2013-08-21,
修回日期:2013-09-29,
纸质出版日期:2014-05-25
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白一鸣, 罗毅, 韩彦军等. 集成封装发光二极管光提取效率的计算及优化[J]. 光学精密工程, 2014,22(5): 1129-1137
BAI Yi-ming, LUO Yi, HAN Yan-jun etc. Calculation and optimization of light extraction efficiency for integrated LED[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1129-1137
白一鸣, 罗毅, 韩彦军等. 集成封装发光二极管光提取效率的计算及优化[J]. 光学精密工程, 2014,22(5): 1129-1137 DOI: 10.3788/OPE.20142205.1129.
BAI Yi-ming, LUO Yi, HAN Yan-jun etc. Calculation and optimization of light extraction efficiency for integrated LED[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1129-1137 DOI: 10.3788/OPE.20142205.1129.
基于蒙特卡罗方法模拟、计算并分析了芯片类型、大小、间距、数量以及布局对GaN基发光二极管(LED)集成封装器件COB(ChipOnBoard)能效的影响。计算结果表明:在芯片间距小于200μm且芯片尺寸或布局等参数相同的条件下,正装LEDCOB的能效最低,其次为倒装LEDCOB,垂直结构芯片的能效最大。当芯片间距大于200μm,3种LEDCOB的能效趋向饱和。芯片尺寸增加或数量减少可使正装和倒装芯片COB的能效上升,而垂直结构COB的能效基本保持不变。加入图形衬底可提高同样尺寸或布局的正装芯片COB封装器件的能效,但使倒装芯片COB的能效恶化。分析表明:芯片的侧面出光量占整个芯片出光量的比值以及相邻芯片材料的吸收对3种类型COB封装器件的能效有决定性影响。文中还针对正装芯片COB设计了新型菱形芯片布局,与常规正方形芯片布局的COB相比,其能效提高了6.2%。
On the basis of Monte Carlo simulation
the influence of chip types
sizes
spacing
numbers and layouts on the energy efficiency of a GaN-based Light Emission Diode(LED) integrated packaging COB(Chip On Board) device was analyzed. The calculation results show when the chip spacing is less than 200 μm while the other parameters are fixed
the face-up chip COB LED has the lowest energy efficiency
and that of the flip chip COB LED comes second and the vertical chip COB LED provides the highest energy efficiency. Moreover
each energy efficiency of these three kinds of COB LED devices tends to saturation when the chip spacing is larger than 200 μm. The increase of the chip size or the decrease of the chip amount can improve the energy efficiencies of the face-up COB LED and flip chip COB LED
while the energy efficiency of the vertical chip COB LED keeps almost a constant. The substrate patterning can improve the energy efficiency of face-up chip COB device with the same size or layout
however it deteriorates that of the flip chip COB device. It is concluded that the percentage of the light emitted from the side surface of the chip and the material-absorption among adjacent chips have a decisive influence on the energy efficiency of the three types of COB packaging devices. As for face-up chip COB LED
a diamond-shaped layout of the chips was presented
and the simulation result shows that the energy efficiency can be increased by 6.2% as compared with that of conventional square chip layout.
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屠大维, 吴仍茂, 杨恒亮, 等. LED封装光学结构对光强分别的影像 [J]. 光学 精密工程, 2008, 16(5):832-838. TU D W, WU R M, YANG H L, et al..Effect of optical structure on output light intensity distribution in LED package [J].Opt.Precision Eng, 2008, 16(5):832-838.(in Chinese)
马建设, 贺丽云, 刘彤, 等. 板上芯片集成封装的发光二极管结构设计 [J]. 光学 精密工程, 2013, 21(4):904-910. MA J SH, HE L Y, LIU T, et al..Design of optical structure for chip-on-board wafer level packaging LEDs[J].Opt.Precision Eng, 2013, 21 (4):904-910.(in Chinese)
郑同场, 李炳乾, 夏正浩. 阵列化互连LED模组寿命分布的蒙特卡洛模拟 [J]. 光电子·激光, 2011, 22(2):207-210. ZHENG T CH,LI B Q, XIA ZH H.Monte-Carlo simulation of lifetime distribution on array interconnection of LED module [J].Journal of Optoelectronics ·Laser, 2011, 22 (2):207-210.(in Chinese)
江洋, 罗毅, 汪莱, 等. 柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响 [J]. 物理学报, 2009, 58:3468. JIANG Y, LUO Y, WANG L, et al..Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures [J].Acta Phys.Sin. , 2009, 58:3468.(in Chinese)
FUJII T, GAO Y, SHARMA R, et al..Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].Appl.Phys.Lett. ,2004, 84:855.
PARK E H, FERGUSON I T, JEON S K, et al..InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface [J].Appl.Phys.Lett. , 2006, 89:251106.
LEE S J.Analysis of light-emitting diodes by Monte Carlo photon simulation [J].Applied Optics, 2001, 40(9):1427-1437.
LEE T X, GAO K F, CHIEN W T, et al..Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate [J].Opt.Express, 2007, 15(11):6670-6676.
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