Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响

高丽丽; 徐莹; 张淼; 姚斌

doi:10.3788/OPE.20142205.1198

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Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响

现代应用光学 | 更新时间：2020-08-13

- Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响
- Effects of Mg contents on photoelectric properties and N doped behaviors in N doped MgZnO fims
- 光学精密工程 2014年22卷第5期页码：1198-1203
- 作者机构：
  
  1. 北华大学物理学院,吉林吉林,132013
  2. 吉林大学物理学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目（No.11274135）();吉林省教育厅"十二五"科学技术研究项目（No.2013189）()
- DOI：10.3788/OPE.20142205.1198
  中图分类号： O472
- 收稿日期：2013-10-20，
  
  修回日期：2013-12-16，
  
  纸质出版日期：2014-05-25
- 稿件说明：
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高丽丽, 徐莹, 张淼等. Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响[J]. 光学精密工程, 2014,22(5): 1198-1203

GAO LI-li, XU Ying, ZHANG Miao etc. Effects of Mg contents on photoelectric properties and N doped behaviors in N doped MgZnO fims[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1198-1203
高丽丽, 徐莹, 张淼等. Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响[J]. 光学精密工程, 2014,22(5): 1198-1203 DOI： 10.3788/OPE.20142205.1198.

GAO LI-li, XU Ying, ZHANG Miao etc. Effects of Mg contents on photoelectric properties and N doped behaviors in N doped MgZnO fims[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1198-1203 DOI： 10.3788/OPE.20142205.1198.

摘要

利用射频磁控溅射技术，在相同流量的氮气、氩气混合气体条件下，在石英基片上溅射获得了不同Mg含量的N掺杂Mg

O薄膜，并研究了Mg含量对N的掺杂行为和薄膜光电性能的影响。结果显示，在N掺杂Mg

O薄膜中，随着Mg含量的增加，薄膜的电阻率增加，载流子浓度下降；X射线电子能谱中位于395eV左右的N

峰强逐渐减弱、甚至消失；Raman光谱中与受主N

Abstract

N doped MgZnO films with different Mg contents were prepared on quartz substrates using mixed gases of 99.99% pure nitrogen and argon at the same flow by radio frequency magnetron sputtering technique

respectively. The effects of Mg content on the doping behavior of N and photoelectric properties of these films were studied. The experimental results indicate that the resistivity increases and the carrier concentration decreases for the films as the Mg content increases. In the X-ray Photoelectron Spectroscopy(XPS)

the N

peak located near 395 eV is gradually weakened and even disappeared. In the Raman spectra

the peaks of the N for O site (N

) at 272 and 642 cm

-1

are also weakened and disappeared with the Mg content increasing. It can be concluded that the doping behavior of N is dominated by the Mg content when N and O are at the same chemical potential in the experiment. With the Mg content increasing

the doping concentration of N for O site (N

) decreases and the chemical state of N is changed. In the film with a low Mg content

N for O site (N

) and N

for O site (N

)

are coexist

but in the film with a high Mg content

only (N

)

exists.

关键词

Keywords

references

BAGNALL D M,CHEN Y F,ZHU Z,et al..Optically pumped lasing of ZnO at room temperature [J].Appl.Phys.Lett.,1997,70(17): 2230-2232.

TANG Z K,WONG G K L,YU P,et al.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J].Appl.Phys.Lett.,1998,72(25): 3270-3272.

申德振,梅增霞,梁会力,等. 氧化锌基材料、异质结构及光电器件[J]. 发光学报, 2014,35(1):1-60. SHEN D ZH,MEI Z X, LIANG H L,et al.ZnO-based Matierial, Heterojunction and Photoelctronic Device [J].Chin.J. Lumin.,2014,35(1):1-60.(in Chinese). ZnO-based Matierial, Heterojunction and photoelctronic Device [J].Mater.Sci.Eng.B,2001,80(1-3):83-87.

ZHANG X D, GUO M L, SHEN Y Y,et al..Electronic structure and optical transition in heavy metal doped ZnO by first-principle calculations [J].Computational Materials Science,2012,54:75-80.

LI LI,GUO Y,CUI X Y,et al.Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate [J].Physical Review B,2012,85(17):174430.

CHEN H X,DING J J,SHI F,et al.Optical properties of Ti-doped ZnO films synthesized via magnetron sputtering [J].Journal of Alloys and Compounds,2012, 534:59-63.

OHTOMO A,KAWASAKI M,T KOIDA,et al.MgxZn1-xO as a Ⅱ-Ⅵ wide gap semiconductor alloy [J].Appl.Phys.Lett.,1998,72(19): 2466-2468.

DU X,MEI Z,LIU Z,et al.Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors [J].Adv.Mater.,2009,21(45): 4625-4630.

尚开,张振中,李炳辉,等. 非对称 ZnO/ ZnMgO 双量子阱内量子效率的提高[J]. 发光学报, 2013,34(7):872-876. SHANG K,ZHANG ZH ZH,LI B H,et al.Improvement of Internal Quantum Efficiency of Asymmetric ZnO/ ZnMgO Multi-quantum Wells [J].Chin.J. Lumin.,2013,34(7):872-876.(in Chinese).

LIEN S T, LI H C, YANG Y J,et al.Atmospheric Pressure Plasma Jet Annealed ZnO Films for MgZnO/ZnO Heterojunctions [J].J.Phys.D: Appl.Phys,2013,46(7):075202.

KONG J Y, LI L, YANG ZH,et al.Ultraviolet Light Emissions in MgZnO/ZnO Double Heterojunction Diodes by Molecular Beam Epitaxy [J].J.Vac.Sci.Technol.B,2010,28(3):C3D10-C3D12.

WEI Z P, YAO B, ZHANG Z Z,et al.Formation of p-type MgZnO by Nitrogen Doping [J].Appl.Phys.Lett.,2006, 89(10): 102104.

MOHANTA S K, NAKAMURA A,TEMMYO J.Synthesis and Characterization of N, In Co-doped MgZnO Films Using Remote-plasma-enhanced Metalorganic Chemical Vapor Deposition [J].Journal of Crystal Growth,2013, 375: 1-5.

CHIEN J F, SHIH H Y, LIAO H Y.P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping [J].ECS J.Solid State Sci.Technol.2013 2(11):R249-R253.

LI Y F, YAO B, LU Y M,et al.Realization of p-type conduction in undoped MgxZn1-xO thin films by controlling Mg content [J].Appl.Phys.Lett.,2007, 91(2): 232115.

PERKINS C L, LEE S H, LI X N,et al.Identification of nitrogen chemical states in N-doped ZnO via x-ray photoelectron spectroscopy [J].J.Appl.Phys.2005,97(3): 034907-031913.

GAI Y Q, YAO B, WEI Z P,et al.Effect on nitrogen acceptor as Mg is alloyed into ZnO [J].Appl.Phys.Lett.2008, 92(6): 062110.

DECREMPS F, PELLICER-PORRES J, SAITTA A M,et al.High-pressure Raman Spectroscopy Study of Wurtzite ZnO [J].Phys Rev B,2002, 65(9): 092101.

KASCHNER A, HABOECK U, STRASSBURG MARTIN,et al.Nitrogen-related local vibrational modes in ZnO:N [J].Appl.Phys.Lett.2002,80(11): 1909-1911.

SANN J, STEHR J, HOFSTAETTER A,et al.Zn interstitial related donors in ammonia -treated ZnO powders [J].Phys.Rev.B,2007, 76(19):195203.

WANG J B, ZHONG H M, LI Z F,et al.Raman study of N+-implanted ZnO [J].Appl.Phys.Lett.2006,88(10),101913.

FRIEDRICH F,NICKEL N H.Resonant Raman scattering in hydrogen and nitrogen doped ZnO [J].Appl.Phys.Lett.2007,91(11):111903.

ARTUS L, CUSCO R, ALARCON-LLADO E,et al.Isotopic study of the nitrogen-related modes in N+-implanted ZnO [J].Appl.Phys.Lett.2007,90(18): 181911.

FRIEDRICH F, GLUBA M A, NICKEL N H.Identication of nitrogen and zinc related vibrational modes in ZnO [J].Appl.Phys.Lett.2009,95(14):141903.

BUNDESMANN C, ASHKENOV N, SCHUBERT M,et al.Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].Appl.Phys.Lett,2003, 83(10): 1974-1976.

GAO L L, YAO B, LIU B,et al.Effects of Mg Concentration on Solubility and Chemical State of N in N-doped MgZnO Alloy [J].J Chem Phys.2010,133(20):204501

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