SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用

白林山; 熊伟; 储向峰; 董永平; 张王兵

doi:10.3788/OPE.20142205.1289

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SiO₂/CeO₂复合磨粒的制备及在蓝宝石晶片抛光中的应用

微纳技术与精密机械 | 更新时间：2020-08-13

- SiO₂/CeO₂复合磨粒的制备及在蓝宝石晶片抛光中的应用
- Preparation of nano SiO₂/CeO₂ composite particles and their applications to CMP on sapphire substrates
- 光学精密工程 2014年22卷第5期页码：1289-1295
- 作者机构：
  
  安徽工业大学化学与化工学院,安徽马鞍山,243002
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目（No.50975002）();安徽工业大学创新团队项目（No.TD201204）();教育部高校留学回国人员科研项目();安徽工业大学研究生创
- DOI：10.3788/OPE.20142205.1289
  中图分类号： TN305.2
- 收稿日期：2013-12-05，
  
  修回日期：2014-02-07，
  
  纸质出版日期：2014-05-25
- 稿件说明：
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白林山, 熊伟, 储向峰*等. SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用[J]. 光学精密工程, 2014,22(5): 1289-1295

BAI Lin-shan, XIONG Wei, CHU Xiang-feng* etc. Preparation of nano SiO2/CeO2 composite particles and their applications to CMP on sapphire substrates[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1289-1295
白林山, 熊伟, 储向峰*等. SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用[J]. 光学精密工程, 2014,22(5): 1289-1295 DOI： 10.3788/OPE.20142205.1289.

BAI Lin-shan, XIONG Wei, CHU Xiang-feng* etc. Preparation of nano SiO2/CeO2 composite particles and their applications to CMP on sapphire substrates[J]. Editorial Office of Optics and Precision Engineering, 2014,22(5): 1289-1295 DOI： 10.3788/OPE.20142205.1289.

摘要

采用均相沉淀法制备了SiO

/CeO

复合磨料，并利用X射线衍射仪（XRD）、透射电子显微镜（TEM）、傅里叶变换红外光谱仪（FT-IR）等对样品的相组成和形貌进行了表征。将所制备的SiO

/CeO

复合磨料用于蓝宝石晶片的化学机械抛光，利用原子力显微镜检测抛光后的蓝宝石晶片表面粗糙度。结果表明：所制备的SiO

/CeO

复合磨粒呈球形，粒径在40-50nm；在相同条件下，经过复合磨料抛光后的蓝宝石晶片表面粗糙度为0.32nm，材料去除速率为16.4nm/min，而SiO

抛光后的蓝宝石晶片表面粗糙度为0.92nm，材料去除速率为20.1nm/min。实验显示，复合磨料的材料去除速率略低于单一SiO

磨料，但它获得了较好的表面质量，基本满足蓝宝石作发光二极管（LED）衬底的工艺要求。

Abstract

SiO

/CeO

composite abrasives were synthesized by homogenous precipitation method. The phase composition and morphology of the as-prepared composite nano-spheres were characterized by a X-ray Diffractomer(XRD)

a Transmission Electron Microscopy(TEM)

and a Fourier Transfer Infrared(FT-IR) spectrometer. The as-prepared composite nano-spheres were used as polishing abrasives for Chemical Mechanical Polishing (CMP) of a sapphire substrate

then the surface roughness of sapphire substrate after polishing with the composite abrasive slurry was measured by a Atomic Force Microscopy(AFM). The results show that the average roughness of the polished sapphire substrate is 0.32 nm and the material removal rate is 16.4 nm/min for composite abrasives

however

those are 0.92 nm and 20.1 nm/min for SiO

abrasive. It demonstrates that the material removal rate of composite abrasives is less than that of the SiO

but it has a good surface quality. These results mean that the SiO

/CeO

composite satisfies the technical requirements for sapphire Light Emission Diode(LED) substrates.

关键词

Keywords

references

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