浏览全部资源
扫码关注微信
1. 中国科学院 长春光学精密机械与物理研究所,吉林 长春,中国,130033
2. 中国科学院大学 北京,中国,100049
收稿日期:2013-04-24,
修回日期:2013-05-24,
纸质出版日期:2014-07-25
移动端阅览
韩素立, 陈波, 尼启良等. 光子计数探测器感应位敏阳极的电子云扩散[J]. 光学精密工程, 2014,22(7): 1732-1736
HAN Su-li, CHEN Bo, NI Qi-liang etc. Electron cloud diffusion property of photon counting detector based on induction readout[J]. Editorial Office of Optics and Precision Engineering, 2014,22(7): 1732-1736
韩素立, 陈波, 尼启良等. 光子计数探测器感应位敏阳极的电子云扩散[J]. 光学精密工程, 2014,22(7): 1732-1736 DOI: 10.3788/OPE.20142207.1732.
HAN Su-li, CHEN Bo, NI Qi-liang etc. Electron cloud diffusion property of photon counting detector based on induction readout[J]. Editorial Office of Optics and Precision Engineering, 2014,22(7): 1732-1736 DOI: 10.3788/OPE.20142207.1732.
针对基于感应位敏阳极的光子计数成像探测器中非晶态Ge(α-Ge)膜的方块电阻对探测器成像性能的影响,研究了方块电阻的选配范围和方法。由于方块电阻的大小会影响Ge膜上的电子云的扩散特性从而影响探测器的计数率和分辨率,故本文根据菲克(Fick)扩散定律分析了吸收边界条件下非晶态薄膜上电子云的扩散特性。确定了电子云扩散时间与Ge膜方块电阻之间的数学关系,推导获得了探测器高质量成像时非晶态Ge膜方块电阻的阻值为30~2 700 MΩ/□。采用具有不同方块电阻的感应位敏阳极进行了实际成像实验,结果表明:当Ge膜方块电阻在上述范围时,光子计数探测器在计数率为53 kc/s时分辨率可以达到0.5 mm。实验结果证明了推导得出的方块电阻选配范围的正确性。
In consideration of the great influence of the sheet resistance of Ge thin film in a single-photon counting imaging detector on its imaging characteristics
this paper explores the selection of the resistance range.As the resistance values are relative to charge cloud diffusion on the Ge thin film
it will effect the counting rate and resolution ratio of the single-photon counting imaging detector.Therefore
the charge cloud diffusion characteristics on the Ge thin film under condition of absorbing boundary were analyzed based on FICK diffusion law and the relationship of the time of charge cloud diffusion on the thin film and the sheet resistance was calculated by the finite diffusion equation.The analysis results show that the photon counting detector has well spatial resolution and counting rate when the sheet resistance of Ge thin film is between 30 MΩ/□ and 2700 MΩ/□.The imaging experiments on Ge film anode with different resistance values were performed
and obtained data demonstrate that the resolution of the photo counting detector can reach 0.5 mm at counting rate of 53 kc/s when sheet resistance of Ge thin film is in the theoretical range
which proves the validity of resistance value selection range by the proposed method.
尼启良,韩素立,陈斌,等. 球面微通道板在极紫外波段的量子探测效率[J]. 光学精密工程,2011,19(11):2602-2607. NI Q L,HAN S L,CHEN B,et al. Quantum detection efficiency of spherical microchannel plate in extreme ultraviolet[J]. Opt. Precision Eng. ,2011,19(11):2602-2607. (in Chinese)
何玲平,岳巾英,刘世界,等. 光子计数位置灵敏探测器畸变多项式校正[J]. 光学学报,2012,32(6):0604002. HE L P,YUE J Y,LIU SH J,et al. Polynomial correction of photon-counting position-sensitive detector's distortion[J]. Acta Optica Sinica,2012,32(6):0604002. (in Chinese)
尼启良,何玲平,刘世界,等. 使用感应电荷位敏阳极的极紫外单光子计数成像系统[J]. 光学精密工程,2010,18(12):2543-2548. NI Q L,HE L P,LIU SH J,et al. Extreme ultraviolet single photon-counting imaging system based on induced charge position-sensitive anode[J]. Opt. Precision Eng.,2010,18(12):2543-2548. (in Chinese)
LAPINGTON J S. Developments in imaging devices for microchannel plate detector[J]. SPIE,2003,4854:191-203.
卜绍芳,尼启良,何玲平,等. 紫外波段微通道板光子计数探测器[J]. 中国光学,2012,5(3):302-309. BU SH F,NI Q L,HE L P,et al. Microchannel plate photon counting detector in UV range[J]. Chinese Optics,2012,5(3):302-309. (in Chinese)
JAGUTZKI O,LAPINGTON J S,WORTH L B C,et al. Position sensitive anodes for MCP readout using induced charge measurement[J]. Nucl. Instr. and Meth. A,2002,477 (1-3) :256-261.
DANTONIO P,JONNERT J. Small-angle-scattering evidence of voids in hydrogenated[J]. Phys. Rev. Lett.,2005,44:423-433.
SAITO M,SAITO Y,ASAMURA K. Spatial charge cloud size of microchannel plates[J]. Rev. Sci. Instrum.,2007,78(2):023302.
ELLILA M. Charge diffusion in the capacitive readout of resistive cathodes[J]. Nucl. Instr. and Meth. ,1989,277(2-3):507-512.
BISQUERT J. Theory of the impedance of electron diffusion and recombination in a thin film[J]. J. Phys. Chem. B,2002,106:325-333.
0
浏览量
100
下载量
3
CSCD
关联资源
相关文章
相关作者
相关机构