高阻值纳米薄膜材料的热电特性测量

蔡浩原; 崔大付; 李亚亭; 张璐璐; 陈兴

doi:10.3788/OPE.20142207.1794

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高阻值纳米薄膜材料的热电特性测量

微纳技术与精密机械 | 更新时间：2020-08-13

- 高阻值纳米薄膜材料的热电特性测量
- Measurement of thermoelectric characteristics of high resistance nano films
- 光学精密工程 2014年22卷第7期页码：1794-1799
- 作者机构：
  
  中国科学院电子学研究所传感技术国家重点实验室北京,100190
- 作者简介：
- 基金信息：
  
  中国科学院研究资助项目（No.KGCX-EW）()
- DOI：10.3788/OPE.20142207.1794
  中图分类号： TB383;O484.5
- 收稿日期：2013-12-20，
  
  修回日期：2014-02-01，
  
  纸质出版日期：2014-07-25
- 稿件说明：
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蔡浩原, 崔大付, 李亚亭等. 高阻值纳米薄膜材料的热电特性测量[J]. 光学精密工程, 2014,22(7): 1794-1799

CAI Hao-yuan, CUI Da-fu, LI Ya-ting etc. Measurement of thermoelectric characteristics of high resistance nano films[J]. Editorial Office of Optics and Precision Engineering, 2014,22(7): 1794-1799
蔡浩原, 崔大付, 李亚亭等. 高阻值纳米薄膜材料的热电特性测量[J]. 光学精密工程, 2014,22(7): 1794-1799 DOI： 10.3788/OPE.20142207.1794.

CAI Hao-yuan, CUI Da-fu, LI Ya-ting etc. Measurement of thermoelectric characteristics of high resistance nano films[J]. Editorial Office of Optics and Precision Engineering, 2014,22(7): 1794-1799 DOI： 10.3788/OPE.20142207.1794.

摘要

为了实现高阻值纳米薄膜材料的热电系数测量，搭建了一套塞贝克系数测量系统。研究了该系统的温控精度和温差生成机制并测量了高阻值条件下微弱电压。首先，建立了高真空度和带有多重电磁屏蔽的真空测试环境；然后，设计了高稳定度温差控制平台，以便为测试样品提供可控温差；同时根据高阻条件下的微弱电压的检测要求，消除了检测通道的漏电流和分布电容的影响。最后，提出了一种循环温差的测量方法，用于有效去除分布电容引起的塞贝克电压长期漂移。采用该方法对高阻值的有机半导体材料进行了塞贝克系数的测定，结果显示：阻值高达7×10

Ω的有机薄膜材料的塞贝克系数的测量精密度

2%，温度控制精度为±0.001 K。得到的结果表明，该系统能够实现对样品阻值高达10

Ω的纳米薄膜材料的塞贝克系数的测量。

Abstract

To measure the thermoelectric characteristics of a high resistance nano film

a Seebeck coefficient measurement apparatus was designed and built.The temperature control accuracy and temperature difference generation mechanism were investigated and the weak voltage signals under a high resistance condition were measured.Firstly

a vacuum environment with an ultra-high vacuum degree and an electric-magnetic shield was setup.Then

a temperature difference control stage was installed inside the vacuum chamber to generate the accurate temperature difference between the two ends of the test sample.Meanwhile

according to the weak voltage detection requirements under the condition of high resistance

the influences of channel leakage current and distributed capacitance were eliminated.Finally

a cyclic temperature gradient generation technique and a corresponding algorithm were proposed to eliminate the negative effects of the long term drift of Seebeck voltage and the Seebeck coefficients of high resistance organic semiconductor materials were measured.Experimental results on a high resistance nano film with resistance over 7×10

Ω indicate that the measuring accuracy of the measurement apparatus is less than 2%

and temperature control accuracy is about ±0.001 K.It means that the apparatus can measure the Seebeck coefficient of nano material with a resistance over 10

Ω.

关键词

Keywords

references

PERMSTICH K,RSSNER B, BATLOGG B. Field-effect-modulated Seebeck coefficient in organic semiconductors[J]. Nature Materials,2008,7 (4): 321-325.

贾磊,胡芃,陈则韶. 温差发电的热力过程研究及材料的塞贝克系数测定[J]. 中国工程科学,2005,7(12):31-34. JIA L,HU P,CHEN ZH SH. Thermodynamic analysis of thermoelectric process and measurement for Seebeck coefficient of thermoelectric material[J]. Engineering Science,2005,7(12):31-34. (in Chinese)

YOSHINO H,PAPAVASSILIOU G,MURATA K. Low-dimensional organic conductors as thermoelec-tric materials[J]. Journal of Thermal Analysis and Calorimetry,2008,92:457-460.

HAAS S, TAKAHASHI Y, TAKIMIYA K,et al. High-performance dinaphtho-thieno-thiophene single crystal field-effect transistors[J]. Applied Physics Letters,2009,95: 022111- 3.

SUN J,YEH M L,JUNG B,et al. Simultaneous increase in Seebeck coefficient and conductivity in a doped poly(alkylthiophene) blend with defined density of states[J]. Macromolecules,2010,43:2897-2903.

TRAKALO M,MOORE C, LESLIE J,et al. Apparatus for measuring Seebeck coefficients of high‐resistance semiconducting films[J]. Rev Sci Instrum,1984,55: 754-760.

NAKAMURA M,HOSHI A, SAKAI M,et al. Evaluation of thermopower of organic materials toward flexible thermoelectric power generators. Mater. Res. Soc. Symp. Proc. ,2010,1197,D09-07.

Keithley Instruments,Inc.,Low level measurements handbook[M]. 6th Edition,2004.

Texas Instruments,LMPT721,3 femtoampere input bias current precision amplifier. http://www. ti. com/product/lmp7721.

何智兵,黄勇刚,张溪文,等. 酞菁铜的性能和应用研究进展[J]. 材料导报,2000,14(10):51-55. HE ZH B,HUANG Y G,ZHANG X W,et al. A review of properties and application of copper phthalocyanine[J]. Materials Review,2000,14 (10): 51-55. (in Chinese)

HAMANN C. Electric properties of copper phthaloc-yanine[J]. Phys. Stat. sol.,1967,20:481.

FIELDING P E,GUTMAN F. Electrical properties of phthalocyanines[J]. J. Chem. Phys. ,1957,26:411.

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