紫外压印长波红外亚波长结构的涂胶工艺研究

王志俊; 李阳平; 周潇逸; 李俊; 刘正堂

doi:10.3788/OPE.20142208.2180

您当前的位置：

首页 >

文章列表页 >

紫外压印长波红外亚波长结构的涂胶工艺研究

微纳技术与精密机械 | 更新时间：2020-08-13

- 紫外压印长波红外亚波长结构的涂胶工艺研究
- Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures
- 光学精密工程 2014年22卷第8期页码：2180-2187
- 作者机构：
  
  凝固技术国家重点实验室, 西北工业大学材料学院,陕西西安,710072
- 作者简介：
- 基金信息：
  
  陕西省自然科学基础研究计划资助项目（No.2013JM8033）();凝固技术国家重点实验室自主研究课题资助项目（No.110-QP-2014）()
- DOI：10.3788/OPE.20142208.2180
  中图分类号： TN305.7
- 收稿日期：2013-11-01，
  
  修回日期：2013-12-30，
  
  纸质出版日期：2014-08-25
- 稿件说明：
移动端阅览
王志俊, 李阳平, 周潇逸等. 紫外压印长波红外亚波长结构的涂胶工艺研究[J]. 光学精密工程, 2014,22(8): 2180-2187

WANG Zhi-jun, LI Yang-ping, ZHOU Xiao-yi etc. Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures[J]. Editorial Office of Optics and Precision Engineering, 2014,22(8): 2180-2187
王志俊, 李阳平, 周潇逸等. 紫外压印长波红外亚波长结构的涂胶工艺研究[J]. 光学精密工程, 2014,22(8): 2180-2187 DOI： 10.3788/OPE.20142208.2180.

WANG Zhi-jun, LI Yang-ping, ZHOU Xiao-yi etc. Spin coating of UV-curable resist for imprinting long-wave infrared subwavelength structures[J]. Editorial Office of Optics and Precision Engineering, 2014,22(8): 2180-2187 DOI： 10.3788/OPE.20142208.2180.

摘要

采用旋涂法进行了Si表面紫外固化胶涂布研究，并压印出了长波红外亚波长结构图形。用激光共聚焦显微镜观察了旋转涂布胶层的表面形貌，测量了表面粗糙度（Ra）;用椭圆偏振仪测试了胶层厚度，扫描电子显微镜观察了压印图形的表面形貌，并用扫描探针显微镜测量了压印图形的结构高度。结果显示：当匀胶转速较小（如300 r/min）时，胶层中不会产生气泡及针孔等缺陷，胶层的Ra小，但胶层均匀性差；提高转速可以改善胶层均匀性，但同时胶层中会产生大量气泡和针孔等缺陷，且它们不会随匀胶时间的延长而消除。文中提出用四转速匀胶法来同时解决胶层均匀性和膜层气泡等问题，获得的胶层无气泡，Ra为317 nm时与Si衬底表面相当（324 nm），均匀性（最小厚度值与最大厚度值之比）为89.17%，胶层平均厚度为626 nm。结果表明：四转速涂胶法获得的胶层满足紫外压印长波红外亚波长结构的要求，压印的图形均匀、完整、保真性好。

Abstract

The ultraviolet-curing imprinting resist on Si substrates was explored by spin coating method

and the long wave subwavelength structures were imprinted. The surface topography of the coated resist layers was observed by a Laser Scanning Co-focal Microscope (LSCM)

and their surface roughnesses(Ra) were tested. The thicknesses of the resist layers were tested by an ellipsometer

then the surface morphology and the structure heights of the imprinted patterns were tested by a Scanning Electron Microscope (SEM) and a Scanning Probe Microscopy(SPM)

respectively. Results show when spin velocities are as low as 300 r/min

the resist layers have negligible defects

such as gas bubbles

pinholes and very low Ra

meanwhile

it shows a bad uniformity. The uniformity can be improved by increasing spin velocity

however

the bubbles and pinholes in the resist layers are also increased and cannot be decreased by extending the spin time at elevated velocities. A four-spin-velocity coating method was proposed to eliminate the bubbles and pinholes and obtain the resist layers with high uniformity. The obtained resist layers show the roughness to be 317 nm

lower than that of the Si substrate (324 nm) and its uniformity is 89.17%

mean thickness is 626 nm. These results well satisfy the requirement of UV imprinting of long-wave infrared antireflective subwavelength structures and imprinted patterns have the advantages of good uniformity

integrity

and higher fidelity.

关键词

Keywords

references

徐启远, 刘正堂, 李阳平,等. ZnS衬底表面亚波长增透结构的设计及制备[J]. 物理学报, 2011, 60(1): 014103-1-014103-4. XU Q Y,LIU ZH T,LI Y P, et al.. Design and preparation of sub-wavelength antireflective structures on ZnS[J]. Acta Phys.Sin.,2011,60(1):014103-1-014103-4. (in Chinese)

鱼卫星, 卢振武, 王鹏,等. 亚波长周期结构与多层增透膜反射特性的比较[J]. 光学精密工程, 2001, 9(1): 10-13. YU W X,LU ZH W,WANG P,et al.. Comparison of periodic subwavelength structure and multilayer antireflection coatings[J]. Opt. Precision Eng.,2001,9(1):10-13. (in Chinese)

LALANNE P, MORRIS G M. Antireflection behavior of silicon subwavelength periodic structures for visible light [J]. Nanotechnology,1997, 8: 53-56.

GUO L J. Recent progress in nanoimprint technology and its applications [J]. Journal of Physics D: Applied Physics,2004, 37(11): R123-R141.

GUO L J. Nanoimprint lithography: methods and material requirements[J]. Advanced Materials,2007,19(4):495-513.

赵晶丽, 王惠卿, 冯晓国,等. 凹球面涂布光刻胶均匀性研究[J]. 应用光学,2009, 30(1): 101-104. ZHAO J L,WANG H Q,FENG X G,et al.. Uniformity of photoresist coated on concave sphere [J].Journal of Applied Optics,2009,30(1):101-104. (in Chinese)

付永启, 赵晶丽. 离心式涂胶膜厚均匀性的影响因素分析[J]. 光学精密工程,1996, 4(2): 94-97. FU Y Q,ZHAO J L. Analysis of effect on uniformity of photoresist layer in spin coating[J].Opt. Precision Eng.,1996,4(2):94-97. (in Chinese)

刘小涵, 冯晓国, 赵晶丽,等. 球面旋涂光刻胶工艺[J]. 光学精密工程, 2011, 19(8): 1810-1815. LIU X H,FENG X G,ZHAO J L. Process of spherical photoresist spin coating[J].Opt. Precision Eng.,2011,19(8):1810-1815. (in Chinese)

李庆亮, 王伟民, 赵晓东,等. 基于ITO玻璃基板的涂胶工艺研究[J]. 电子工艺技术,2010, 31(4): 237-240. LI Q L,WANG W M,ZHAO X D,et al.. Gelatinizing research based on the ITO glass [J].Electronics Process Technology,2010,31(4):237-240. (in Chinese)

洪诗捷, 沈奕. 涂胶膜厚优化试验与控制方法[J]. 现代显示,2005, 57:44-46. HONG SH J,SHEN Y. Study of photo-resist coating technology to achieve optimized film thickness[J]. Advanced Display,2005,57:44-46. (in Chinese)

WHITE. SPIN-COATING PROCEDURE,US:47419 26[P]. 1998.

HWANG J H, MA F. On the flow of a thin liquid film over a rough rotating disk [J]. Journal of Applied Physics,1988, 66(1): 388-394.

PEURRUNG L M, GRAVES D B. Film thickness profiles over topography in spin coating[J]. The Electrochemical Society, 1991, 138(7):2115-2124.

陈海波, 李阳平, 王宁,等. 二维亚波长结构石英紫外压印模板的制备[J]. 真空科学与技术学报, 2013, 33(2): 176-180. CHEN H B,LI Y P,WANG N,et al.. Fabrication of ultraviolet-nanoimprint mold of 2-dimensional sub-wavelength structured surface on quartz substrate [J]. Chinese Journal of Vacuum Science and Technology,2013,33(2):176-180. (in Chinese)

HIROSHIMA H, ATOBE H, WANG Q. Viscosity of a thin film of UV curable resin in pentafluoropane [J]. Journal of Photolymer Science and Technology,2010, 23(1): 45-50.

HIROSHIMA H, KOMURO M. Control of bubble defects in UV nanoimprint[J]. Japanese Journal of Applied Physics, 2007, 46(9B):6391-6394.

LEE H. Effect of imprinting pressure on residual layer thickness in ultraviolet nanoimprint lithography [J]. Journal of Vacuum Science & Technology B, 2005, 23(3): 1102-1106.

张少峰, 刘正堂, 李阳平,等. 反应离子刻蚀法制备石英纳米压印模板的工艺研究[J]. 机械科学与技术, 2012, 31(11): 1786-1789. ZHANG SH F,LIU ZH T,LI Y P,et al.. Preparation and characterization of nanoimprint template on quartz by reactive ion etching[J].Mechanical Science and Technology for Aerospace Engineering,2012,31(11):1786-1789. (in Chinese)

周伟民, 张静, 刘彦伯,等. 纳米压印技术[M]. 北京:科学出版社, 2012. ZHOU W M,ZHANG J,LIU Y B,et al. Nano-Imprint Technology[M]. Beijing: Science Press,2012. (in Chinese)

向东, 何磊明, 瞿德刚,等. 半导体制造中涂胶工艺的研究进展[J]. 中国机械工程, 2012, 23(3): 355-361. XIANG D,HE L M,QU D G,et al.. Development of coating of photoresist in semiconductor manufacturing[J]. China Mechanical Engineering, 2012,23(3):355-361. (in Chinese)

YONEDA I, NAKAGAWA Y, MIKAMI S, et al.. A study of filling process for UV nanoimprint lithography using a fluid simulation [J]. Alternative Lithographic Technologies, 2009, 7271:72712A-1-72712A-7.

浏览量

541

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

镍渣改质及其在磁性复合流体抛光中的应用

机器人抛光M-ZnS去除函数建模与工艺参数优化

8寸CMP设备对小尺寸镀铜InP晶圆的工艺开发

磁性复合流体抛光过程中水分对抛光性能的影响

单晶硅激光辅助超精密切削工艺优化与表面特性