固结磨料研磨蓝宝石单晶过程中研磨液的作用

王建彬; 朱永伟; 谢春祥; 徐俊; 居志兰

doi:10.3788/OPE.20142211.3004

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固结磨料研磨蓝宝石单晶过程中研磨液的作用

微纳技术与精密机械 | 更新时间：2020-08-13

- 固结磨料研磨蓝宝石单晶过程中研磨液的作用
- Role of slurry in single crystal sapphire lapping with fixed abrasive pad
- 光学精密工程 2014年22卷第11期页码：3004-3011
- 作者机构：
  
  1. 南京航空航天大学机电学院,江苏南京,210016
  2. 安徽工程大学机械与汽车工程学院,安徽芜湖,241000
  3. 上海航天控制技术研究所上海,200233
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.51175260)();江苏省自然科学基金资助项目(No.BK2010516)();中央高校基本科研业务费专项资金资助项目(No.NP2
- DOI：10.3788/OPE.20142211.3004
  中图分类号： O786;TN305.2
- 收稿日期：2014-01-13，
  
  修回日期：2014-03-14，
  
  纸质出版日期：2014-11-25
- 稿件说明：
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王建彬, 朱永伟, 谢春祥等. 固结磨料研磨蓝宝石单晶过程中研磨液的作用[J]. 光学精密工程, 2014,22(11): 3004-3011

WANG Jian-bin, ZHU Yong-wei, XIE Chun-xiang etc. Role of slurry in single crystal sapphire lapping with fixed abrasive pad[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3004-3011
王建彬, 朱永伟, 谢春祥等. 固结磨料研磨蓝宝石单晶过程中研磨液的作用[J]. 光学精密工程, 2014,22(11): 3004-3011 DOI： 10.3788/OPE.20142211.3004.

WANG Jian-bin, ZHU Yong-wei, XIE Chun-xiang etc. Role of slurry in single crystal sapphire lapping with fixed abrasive pad[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3004-3011 DOI： 10.3788/OPE.20142211.3004.

摘要

开展了固结磨料研磨单晶蓝宝石面板的实验研究

探索了不同研磨液对材料去除速率和工件表面质量的影响。分析了研磨液对蓝宝石表面的化学作用

探索了固结磨料研磨蓝宝石晶体的材料去除机理。实验显示:使用W14镀镍金刚石固结磨料研磨蓝宝石单晶

研磨液仅为去离子水时

材料去除率(MRR)为149.8 nm/min、表面粗糙度(

)为76.2 nm;而研磨液中加入2%的乙二醇后

相应的MRR为224.1 nm/min

为50.7 nm。用光电子能谱仪(XPS)分析了工件表面

结果表明含有乙二醇的研磨液能够增加蓝宝石工件表面的活性。得到的结果显示:在溶液中加入乙二醇有利于表面软化层的生成并增加蓝宝石表面的活性

说明研磨液对蓝宝石单晶研磨效率的提升和表面质量的改善具有促进作用。

Abstract

Lots of lapping experiments were carried out for a single crystal sapphire by using a diamond fixed abrasive (FA) pad. The effects of different kinds of slurries on Material Removal Rate(MRR) and the surface quality of a workpiece were studied. The chemical influences of slurries on the surface of the crystal sapphire were analyzed and the material removal mechanism of the sapphire crystal by fixed abrasives was explored. Experiments show when W14 diamond fixed abrasive plated nickel is used to lap the single crystal sapphire and the deionized water is used as slurry

the MRR is 149.8 nm/min

and the surface roughness (

) is 76.2 nm. However

after adding 2% of ethylene glycol into the slurry

those are 224.1 nm/min and 50.7 nm

respectively. A photoelectron spectrometer (XPS) was used to analyze the surface of the workpiece

and it shows that the solution of ethylene glycol has more chemistry promotion for the sapphire surface. These results indicate that the addition of ethylene glycol is helpful for the formation of softened surface layer on the sapphire surface and increases the activity of sapphire surface. It means that the slurry plays an important role for enhancing lapping efficiency and improving surface quality of workpieces.

关键词

Keywords

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