用电镀铜锡合金薄膜实现圆片级气密封装

杜利东; 赵湛; 方震; 孙学金; 王晓蕾

doi:10.3788/OPE.20142211.3044

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用电镀铜锡合金薄膜实现圆片级气密封装

微纳技术与精密机械 | 更新时间：2020-08-13

- 用电镀铜锡合金薄膜实现圆片级气密封装
- Wafer level hermetic packaging based on electroplating Cu-Sn alloy films
- 光学精密工程 2014年22卷第11期页码：3044-3049
- 作者机构：
  
  1. 中国科学院电子学研究所传感器国家重点实验室北京,100190
  2. 解放军理工大学气象与海洋学院,江苏南京,211101
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金资助项目(No.51305423)();国家863高技术研究发展计划资助项目(No.2012AA040504,No.2012AA040502)()
- DOI：10.3788/OPE.20142211.3044
  中图分类号： TP212
- 收稿日期：2014-03-05，
  
  修回日期：2014-04-17，
  
  纸质出版日期：2014-11-25
- 稿件说明：
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杜利东, 赵湛, 方震等. 用电镀铜锡合金薄膜实现圆片级气密封装[J]. 光学精密工程, 2014,22(11): 3044-3049

DU Li-dong, ZHAO Zhan, FANG Zhen etc. Wafer level hermetic packaging based on electroplating Cu-Sn alloy films[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3044-3049
杜利东, 赵湛, 方震等. 用电镀铜锡合金薄膜实现圆片级气密封装[J]. 光学精密工程, 2014,22(11): 3044-3049 DOI： 10.3788/OPE.20142211.3044.

DU Li-dong, ZHAO Zhan, FANG Zhen etc. Wafer level hermetic packaging based on electroplating Cu-Sn alloy films[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3044-3049 DOI： 10.3788/OPE.20142211.3044.

摘要

开发了一种基于电镀铜锡合金薄膜的绝压气压传感器圆片级气密封装技术以降低常规的基于阳极键合气密封装技术的成本及难度。通过实验确定了铜锡合金薄膜的电镀参数

实现了结构参数为:Cr/Cu/Sn (30 nm/4 m/4 m)的铜锡合金薄膜;通过共晶键合实验确定圆片级气密封装的参数

进行了基于铜锡材料的气密封装温度实验。通过比较各种不同温度下气密封装的结果

确定了完成圆片级气密封装的条件为:静态压力0.02 MPa

加热温度280

保持20 min。最后

对气密封装效果进行X-射线衍射谱(XRD)、X射线分析、剪切力以及氦气泄露分析等实验研究。XRD分析显示:在键合界面出现了Cu

Sn相

证明形成了很好的键合;X射线分析表明封装面无明显孔洞;剪切力分析给出平均键合强度为9.32 MPa

氦气泄露分析则显示泄露很小。得到的结果表明:基于电镀铜锡合金薄膜可以很好地实现绝压气压传感器的圆片级气密封装。

Abstract

A kind of wafer level hermetic packaging based on electroplating Cu-Sn alloy films was developed to reduce the cost and difficulty of traditional hermetic packaging based on anodic bonding。The electroplating parameters of Cu-Sn alloy films were determined by the electroplating experiments

and the structure of alloy film is Cr/Cu/Sn (30 nm/4 m/4 m). Then

the hermetic packaging parameter was determined by eutectic experiments. After comparing the hermetic packaging results at different temperatures

the wafer-level packaging was achieved well on a temperature of 280℃

holding time of 20 min and a static pressure of 0.02 MPa. Finally

the quality of hermetic packaging was tested by X-ray Diffractometry(XRD)

X-ray analysis

a shear stress analysis and a helium leakage rate test. The XRD experiment shows that the bonding is formed because that there are phase Cu

Sn in bonding layer. The hermetic quality is verified by the X-ray analysis and the helium leak rate test. It is suggested that no obvious holes are occurred around the hermetic ring and most of the cells have good hermetic bond quality. Moreover

the average shear strength is 9.32 MPa by shear stress test. These results demonstrate that the wafer-level hermetic packaging has been achieved well based on electroplating Cu-Sn alloy films.

关键词

Keywords

references

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