用于半导体激光器的大电流纳秒级窄脉冲驱动电路

陈彦超; 冯永革; 张献兵

doi:10.3788/OPE.20142211.3145

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用于半导体激光器的大电流纳秒级窄脉冲驱动电路

信息科学 | 更新时间：2020-08-13

- 用于半导体激光器的大电流纳秒级窄脉冲驱动电路
- Large current nanosecond pulse generating circuit for driving semiconductor laser
- 光学精密工程 2014年22卷第11期页码：3145-3151
- 作者机构：
  
  北京大学地球与空间科学学院理论与应用地球物理所北京,100871
- 作者简介：
- 基金信息：
  
  国家973重点基础研究发展计划资助项目(No.2012CB417301)()
- DOI：10.3788/OPE.20142211.3145
  中图分类号： TN248.4
- 收稿日期：2013-12-03，
  
  修回日期：2014-02-03，
  
  纸质出版日期：2014-11-25
- 稿件说明：
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陈彦超, 冯永革, 张献兵. 用于半导体激光器的大电流纳秒级窄脉冲驱动电路[J]. 光学精密工程, 2014,22(11): 3145-3151

CHEN Yan-chao, FENG Yong-ge*, ZHANG Xian-bing. Large current nanosecond pulse generating circuit for driving semiconductor laser[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3145-3151
陈彦超, 冯永革, 张献兵. 用于半导体激光器的大电流纳秒级窄脉冲驱动电路[J]. 光学精密工程, 2014,22(11): 3145-3151 DOI： 10.3788/OPE.20142211.3145.

CHEN Yan-chao, FENG Yong-ge*, ZHANG Xian-bing. Large current nanosecond pulse generating circuit for driving semiconductor laser[J]. Editorial Office of Optics and Precision Engineering, 2014,22(11): 3145-3151 DOI： 10.3788/OPE.20142211.3145.

摘要

根据脉冲式半导体激光器对功率、脉宽、上升沿的要求

同时考虑电脉冲的注入便于测试激光器的各种性能

提出了一种以金属氧化物半导体场效应晶体(MOSFET)为开关器件

以雪崩晶体管为驱动器

可产生大电流、窄脉宽、陡上升沿脉冲的激光器驱动电路。讨论了预触发脉冲宽度和雪崩晶体管输出负载对MOSFET输出脉冲在幅度和波形上的影响以及如何通过调整耦合电阻来控制脉冲的"下冲"和振荡。实验结果表明:在0～200 V供电电压下

该电路在1 电阻上产生了从0 A到148 A

具有陡上升/下降沿的10 ns级电脉冲。通过调整电路参数

可输出脉冲宽度窄至8.6 ns

幅度达到124 A的电脉冲。该驱动电路满足了脉冲式半导体激光器的工作要求和对器件测试的要求。

Abstract

According to the requirements of pulse semiconductor lasers for peak powers

pulse widths and rising edges and considering the test behaviors of semiconductor lasers

a driving circuit for the semiconductor lasers with large current outputting

narrower widths and sharp edges was proposed. The circuit used a Metal Oxide Semiconductor Field Effect Transistor(MOSFET) as a switch device and a avalanche transistor as a driver to generate the large current pulse with sharp edge and narrow width. The effect of the pre-trigger pulse width and output load of the avalanche transistor on the amplitude and waveform of MOSFET output pulse was analyzed and how to adjust the coupling resistance to control the pulse "down" and oscillation was discussed. The experimental results show that the circuit generates electric pulses of 10 ns with continuously adjustable attitudes and sharp rising and falling edges

and the amplitude of pulse varies from 0 A to 148 A on a 1 resistor. After adjusting electric parameters

a 124 A current pulse with a pulse width of 8.6 ns is obtained. The circuit meets the needs of driving high power semiconductor lasers as well as laser testing.

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references

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