浏览全部资源
扫码关注微信
北京航空航天大学 仪器科学与光电工程学院 精密光机电一体化技术教育部重点实验室 北京,100191
收稿日期:2014-01-24,
修回日期:2014-03-20,
纸质出版日期:2014-12-25
移动端阅览
闫劲云, 江洁, 张广军. 像增强型图像传感器在总剂量辐照下的光响应度[J]. 光学精密工程, 2014,22(12): 3153-3159
YAN Jin-yun, JIANG Jie, ZHANG Guang-jun. Photoelectric response of ICMOS on total dose irradiation[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3153-3159
闫劲云, 江洁, 张广军. 像增强型图像传感器在总剂量辐照下的光响应度[J]. 光学精密工程, 2014,22(12): 3153-3159 DOI: 10.3788/OPE.20142212.3153.
YAN Jin-yun, JIANG Jie, ZHANG Guang-jun. Photoelectric response of ICMOS on total dose irradiation[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3153-3159 DOI: 10.3788/OPE.20142212.3153.
采用
60
Co-
γ
射线对像增强型图像传感器进行了总剂量辐照实验
以便评估该器件在空间总剂量辐照下的微光探测性能.当总剂量达到预定剂量点时
采用离线测试的方法定量测试了器件的光响应度变化情况.实验结果表明
随着辐照总剂量的增加
器件的光响应度迅速下降;当总剂量达60 krad(Si)时
相对光响应度降低至辐照前的6%.根据像增强型图像传感器的构成
分析了光响应度下降的原因
并推导了光响应度随辐照剂量变化的经验公式.实验显示
提高像增强型图像传感器的增益电压可补偿光响应度的衰减
总剂量达25 krad(Si)时
增益提高0.23 V其光响应度即可恢复至未接受辐照前的100%
并保持良好的微光探测能力.研究表明
像增强型图像传感器可承受25 krad(Si)的总剂量辐射.
An irradiation experiment for an image-intensified sensor (Intensified Complemetary Metal-oxide Semiconductor
ICMOS) was performed with a
60
Co-
γ
ray source to evaluate its weak-light-detecting ability under the total dose irradiation. When the total dose of irradiation reached the predetermined point
the change of photoelectric response capability of the sensor was measured quantitatively by an off line method. The experiment results show that as the total dose of irradiation increases
the photoelectric response capability decreases rapidly. When the total dose of irradiation reaches 60 krad(Si)
the photoelectric response capability is reduced to 6%. The causes of decline of the photoelectric response capability were analyzed according to the components of the image-intensified sensor and empirical equations of the decline of the photoelectric response capability were also derived. The experiments demonstrate that the decline of the photoelectric response capability is compensated by improving the voltage gain of the image-intensified sensor. When the total dose of irradiation reaches 25 krad(Si)
the photoelectric response capability still maintains 100% by improving the voltage gain of the image-intensified sensor of 0.23 V meanwhile maintaining a good weak-light-detecting ability. These findings show that the image-intensified sensor is able to withstand 25 krad(Si) of the total dose irradiation.
史继芳,杨斌,韩占锁,等. 基于双重模型客观评价微光像增强器的分辨力[J]. 光学 精密工程, 2013, 21(9): 2260-2265. SHI J F, YANG B, HAN ZH S, et al.. Objective evaluation of resolution for low-light-level image intensifier based on dual-model [J]. Opt. Precision Eng., 2013, 21(9): 2260-2265. (in Chinese)
章明朝, 周跃, 闫丰, 等. "日盲"紫外增强型CCD的自动增益控制[J]. 光学 精密工程, 2010, 18(2): 496-502. ZHANG M CH, ZHOU Y, YAN F, et al.. Automatic gain control of SBUV-ICCD [J]. Opt. Precision Eng., 2010, 18(2): 496-502. (in Chinese)
HUBER M C E, PAULUHN A, TIMOTHY J G, et al.. Observing Photons in Space [M]. New York:Springer, 2010.
KATAKE A B, OCHOA J, ZBRANEK J, et al.. Development and testing of the starcam sg100: A stellar gyroscope[C]. AIAA Guidance and Control Conference Exhibit. 2008.
BOGAERT J, DIERICKX B. Total dose effects on CMOS active pixel sensors[C]. Electronic Imaging. International Society for Optics and Photonics, 2000: 157-167.
何宝平, 陈伟, 王桂珍. CMOS器件60Co-γ射线,电子和质子电离辐射损伤比较[J]. 物理学报, 2006, 55(7):3546-3551. HE B P, CHEN W, WANG G ZH. A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons[J]. Acta Physica Sinica, 2006, 55(7): 3546-3551.(in Chinese)
王祖军, 唐本奇, 肖志刚, 等. CCD电离辐射效应损伤机理分析[J]. 核电子学与探测技术, 2009, 29(3): 565-570. WANG Z J, TANG B Q, XIAO ZH G, et al.. The Analysis of mechanism on ionization radiation damage effects on CCD[J]. Nuclear Electronics & Detection Technology, 2009, 29(3): 565-570.(in Chinese)
张立国, 李豫东, 刘则洵, 等. TDI-CCD总剂量辐射效应及测试[J]. 光学 精密工程, 2009, 17(12): 2925-2930. ZHANG L G, LI Y D, LIU Z X, et al.. Influence of total dose effects on TDI-CCD and corresponding test methods[J]. Opt. Precision Eng., 2009, 17(12): 2925-2930.(in Chinese)
郭永飞. 遥感CCD相机的抗辐射策略研究[J]. 中国光学, 2010,3(6): 534-545. GUO Y F. Anti-radiation techniques for CCD remote sensing cameras[J]. Chinese Optics, 2010,3(6):534-545. (in Chinese)
周彦平, 王晓明, 常国龙, 等. CMOS图像传感器的辐射实验[J]. 红外与激光工程, 2011, 40(7): 1270-1273. ZHOU Y P, WANG X M, CHANG G L, et al.. Radiation experiment of CMOS image sensor[J]. Infrared and Laser Engineering, 2011, 40(7): 1270-1273. (in Chinese)
李豫东, 张乐情, 郭旗, 等. CCD的辐射损伤参数测试方法[C]. 第十六届全国核电子学与核探测技术学术年会论文集, 中国绵阳,2012:135-140. LI Y D, ZHANG L Q, GUO Q, et al.. Parameter test method for radiation damage of CCDs[C]. Proceedings of 16th National Annual Conference on Nuclear Electronics & Detection Technology, Mianyang, China, 2012:135-140. (in Chinese)
李荣玉, 殷宗敏, 王建华, 等. 石英光纤抗辐照加固的研究[J]. 上海交通大学学报, 2000, 34(2): 215-217. LI R Y, YIN Z M, WANG J H, et al.. Research on anti-radiation of silica fiber[J]. Journal of Shanghai Jiaotong University, 2000, 34(2):215-217. (in Chinese)
宋镜明, 郭建华, 王学勤, 等. 光纤辐射致衰减效应[J]. 激光与光电子学进展, 2012, 49(8): 58-64. SONG J M, GUO J H, WANG X Q, et al.. Radiation induced attenuation effect for optical fibers[J]. Laser & Optoelectronics Progress,2012, 49(8): 58-64. (in Chinese)
GRISCOM D L, GINGERICH M E, FRIEBELE E J. Radiation-induced defects in glasses: origin of power-law dependence of concentration on dose [J]. Physical Review Letters, 1993, 71(7): 1019-1022.
盛于邦, 杨旅云, 栾怀训, 等. γ辐照对掺Er硅酸盐玻璃吸收和发光特性的影响[J]. 物理学报, 2012, 61(11): 116301-1-6. SHENG Y B, YANG L Y, LUAN H X, et al.. Gamma radiation effects on absorption and emission properties of erbium-doped silicate glasses [J]. Acta Phys. Sin., 2012, 61(11):116301-1-6. (in Chinese)
0
浏览量
630
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构