应用表面改性技术降低烧结碳化硅反射镜的表面散射

王彤彤

doi:10.3788/OPE.20142212.3224

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应用表面改性技术降低烧结碳化硅反射镜的表面散射

现代应用光学 | 更新时间：2020-08-13

- 应用表面改性技术降低烧结碳化硅反射镜的表面散射
- Decreasing surface scattering of sintered silicon carbide mirror by surface modification technique
- 光学精密工程 2014年22卷第12期页码：3224-3230
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所中国科学院光学系统先进制造技术重点实验室,吉林长春,130033
- 作者简介：
  
  [ "王彤彤(1979-), 男, 吉林长春人, 博士, 副研究员, 2002年于延边大学获得学士学位, 2008年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要研究方向为先进光学薄膜的理论和制备.E-mail:wangtongtong@126.com" ]
- 基金信息：
  
  国家自然科学基金资助项目(No.60478035)()
- DOI：10.3788/OPE.20142212.3224
  中图分类号： TN304.24;O484.1
- 收稿日期：2014-03-20，
  
  修回日期：2013-04-21，
  
  纸质出版日期：2014-12-25
- 稿件说明：
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王彤彤,. 应用表面改性技术降低烧结碳化硅反射镜的表面散射[J]. 光学精密工程, 2014,22(12): 3224-3230

WANG Tong-tong,. Decreasing surface scattering of sintered silicon carbide mirror by surface modification technique[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3224-3230
王彤彤,. 应用表面改性技术降低烧结碳化硅反射镜的表面散射[J]. 光学精密工程, 2014,22(12): 3224-3230 DOI： 10.3788/OPE.20142212.3224.

WANG Tong-tong,. Decreasing surface scattering of sintered silicon carbide mirror by surface modification technique[J]. Editorial Office of Optics and Precision Engineering, 2014,22(12): 3224-3230 DOI： 10.3788/OPE.20142212.3224.

摘要

针对烧结碳化硅在制作过程中形成的孔洞缺陷会造成严重的反射镜表面散射问题

提出了用等离子体辅助沉积技术镀制硅表面改性层来消除表面缺陷以降低反射镜的表面散射.应用扫描电子显微镜测量了未改性的烧结碳化硅试片

并分析了表面散射成因.搭建了总积分散射仪

测试了改性前后的烧结碳化硅试片及抛光良好的K9玻璃试片的总积分散射.结果显示:烧结碳化硅试片改性前后的总积分散射分别为3.92%和1.42%

K9玻璃的总积分散射为1.36%.使用原子力显微镜测试了烧结碳化硅试片改性抛光后表面和K9试片表面的均方根粗糙度

结果分别为1.63 nm和1.04 nm

证明了改性后的烧结碳化硅试片消除了表面缺陷

显著地降低了表面散射

表面光学性能与抛光良好的K9玻璃接近.

Abstract

As pin holes of sintered silicon carbide formed in manufacturing process cause serious surface scattering of mirrors

this paper proposes a surface modification technique to decrease the surface scattering of sintered silicon carbide mirror. A silicon layer was deposited by plasma ion assisted deposition technique on the mirror as a surface modification coating to eliminate the defects on the mirror surface and to decrease the surface scattering effectively. A scanning electron microscope was applied to characterize of the morphology of the sintered silicon carbide sample

and the surface scattering origin was systematically analyzed. A total integrated scattering instrument was established. Then the total integrated scatterings of the sintered silicon carbide samples before and after surface modifications and a fine polished K9 glass sample were measured. The results indicate that the total integrated scatterings of the sintered silicon carbide sample before and after surface modifications are 3.92% and 1.42%

respectively

and that of the K9 glass sample is 1.36%. The surface root mean square roughnesses of the sintered silicon carbide sample after surface modification polishing and the fine polished K9 glass sample are 1.63 nm and 1.04 nm respectively. These results demonstrate that the defect of the sintered silicon carbide is successfully eliminated after surface modification

the surface scattering is greatly decreased

furthermore the surface optical performance is quite close to that of the K9 glass.

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Keywords

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