应用微波技术抑制光刻胶图形的坍塌与黏连

于明岩; 施云波; 赵士瑞; 郭晓龙; 徐昕伟; 景玉鹏; 陈宝钦

doi:10.3788/OPE.20152301.0149

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应用微波技术抑制光刻胶图形的坍塌与黏连

微纳技术与精密机械 | 更新时间：2020-08-13

- 应用微波技术抑制光刻胶图形的坍塌与黏连
- Suppression of collapse and adhesion of photoresist based on microwave heating
- 光学精密工程 2015年23卷第1期页码：149-156
- 作者机构：
  
  1. 中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室北京,100029
  2. 哈尔滨理工大学测控技术与通信工程学院测控技术与仪器黑龙江省高校重点实验室,黑龙江哈尔滨,150080
- 作者简介：
- 基金信息：
  
  国家科技重大专项资助项目(No.2009ZX02037-007)();国家973重点基础研究发展计划资助项目(No.2006CB932600)();国家自然科学基金资助
- DOI：10.3788/OPE.20152301.0149
  中图分类号： TN305.7
- 收稿日期：2014-06-05，
  
  修回日期：2014-07-13，
  
  纸质出版日期：2015-01-25
- 稿件说明：
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于明岩, 施云波, 赵士瑞等. 应用微波技术抑制光刻胶图形的坍塌与黏连[J]. 光学精密工程, 2015,23(1): 149-156

YU Ming-yan, SHI Yun-bo, ZHAO Shi-rui etc. Suppression of collapse and adhesion of photoresist based on microwave heating[J]. Editorial Office of Optics and Precision Engineering, 2015,23(1): 149-156
于明岩, 施云波, 赵士瑞等. 应用微波技术抑制光刻胶图形的坍塌与黏连[J]. 光学精密工程, 2015,23(1): 149-156 DOI： 10.3788/OPE.20152301.0149.

YU Ming-yan, SHI Yun-bo, ZHAO Shi-rui etc. Suppression of collapse and adhesion of photoresist based on microwave heating[J]. Editorial Office of Optics and Precision Engineering, 2015,23(1): 149-156 DOI： 10.3788/OPE.20152301.0149.

摘要

针对显影工艺中水的表面张力导致的高高宽比抗蚀剂图形的坍塌及黏连

提出了一种基于微波加热的干燥技术来有效改善纳米抗蚀剂图形的干燥效果.该方法利用微波穿透光刻胶结构直接加热光刻胶图形间隙中残存的去离子水

水分子吸收微波的光子能量迅速蒸发

从而有效地抑制光刻胶图形的坍塌与黏连现象.利用提出的基于微波加热的干燥方法

成功获取了高260 nm、宽16 nm的光刻胶线条组和直径为20 nm的光刻胶柱形阵列

其中高高宽比线条组和由15 625根柱子组成的柱形阵列结构没有出现坍塌及黏连情况

验证了在微波产生的交变电场作用下

可以减小水分子团簇

降低水的表面张力.

Abstract

For the collapse and adhesion of photoresist with nano-structures due to the surface tension of deionized water in electron beam lithography

a drying method based on microwave heating is proposed to improve the quality of the photoresist with nano-structures. The method makes use of the microwave penetrate the photoresist to heat the water stored between resist patterns directly

and the water will evaporate with absorbing energy of microwave. Thus the collapse and adhesion of the photoresist with nano-structures can be avoided. The proposed method is used for drying photoresist lines with a height of 260 nm

width of 16 nm and photoresist pillars with the diameter of 20 nm in electron beam lithography and development. The results show that the lines and the array containing of 15 625 pillars are no collapse and adhesion

which demonstrates that the microwave with an alternating electric field can reduce the sizes of water clusters and the tension of deionized water dramatically.

关键词

Keywords

references

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