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1. 中北大学 仪器科学与动态测试教育部重点实验室,山西 太原,030051
2. 山西省光电信息与仪器工程技术研究中心,山西 太原,030051
收稿日期:2014-09-24,
修回日期:2014-11-04,
纸质出版日期:2015-05-25
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李克武, 王志斌, 张瑞等. 沿光轴通光的LiNbO<sub>3</sub>的横向电光调制特性[J]. 光学精密工程, 2015,23(5): 1227-1232
LI Ke-wu, WANG Zhi-bin, ZHANG Rui etc. LiNbO<sub>3</sub> transverse electro-optical modulation characteristics for light pass along optical axis[J]. Editorial Office of Optics and Precision Engineering, 2015,23(5): 1227-1232
李克武, 王志斌, 张瑞等. 沿光轴通光的LiNbO<sub>3</sub>的横向电光调制特性[J]. 光学精密工程, 2015,23(5): 1227-1232 DOI: 10.3788/OPE.20152305.1227.
LI Ke-wu, WANG Zhi-bin, ZHANG Rui etc. LiNbO<sub>3</sub> transverse electro-optical modulation characteristics for light pass along optical axis[J]. Editorial Office of Optics and Precision Engineering, 2015,23(5): 1227-1232 DOI: 10.3788/OPE.20152305.1227.
为了克服现有电光器件的缺陷
选取晶体生长工艺成熟、价格低廉、折射率及电光系数较大的LiNbO
3
作为电光晶体材料
研究了沿其光轴方向通光的横向电光效应。加工制作了
x
切、(
xzl
)45切和
y
切3种不同切型的横向电光调制器
并对他们的调制性能做了实验分析。研究结果表明
沿LiNbO
3
光轴方向通光的横向电光调制有相同的电光参量
折射率感应主轴的位置与电场方向有关;3种不同切型的横向体电光调制器的零场泄露均很小
静态消光比均优于1 000:1
半波电压实测值与理论值的相对误差不超过1.7%;相同调制电压下
它们的调制深度相同
且调制性能稳定。该项研究可为该类电光调制器件的设计和应用提供参考
拓展它们在光通信和光学测量领域的应用。
To overcome the defects of existing electro-optical devices
the LiNbO
3
with advantages of mature growth process
low prices
large refractive indexes and large electro-optical coefficients was selected as an electro-optical material
and its transverse electro-optical effect for light pass along optical axis was researched. Then
three kinds of transverse electro-optical modulators with
x
-cut
(
xzl
)45-cut and
y
-cut were fabricated
and their modulation characteristics were analyzed experimentally.The results indicate that the transverse electro-optical effects that light passes along optical axis have the same electro-optical parameters
and the refractive index induced spindle position is related to the direction of electric field. The three kinds of transverse electro-optical modulators with different cut modes all show the lower zero-field leakages
their static extinction ratios exceed 1 000:1 and the relative error of half-wave voltage between measured value and theoretical value is less than 1.7%. Under the same modulation voltage
these modulators give the same modulation depths and stable modulation characteristics. The research provides references for design of this kind of electro-optical modulation devices
and will expands their applications in optical communications and optical measurement fields.
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