磁控溅射法制备的五氧化二钒薄膜光电特性

张圣斌; 左敦稳; 卢文壮; 左杨平

doi:10.3788/OPE.20152309.2438

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磁控溅射法制备的五氧化二钒薄膜光电特性

现代应用光学 | 更新时间：2020-08-12

- 磁控溅射法制备的五氧化二钒薄膜光电特性
- Optical and electrical properties of vanadium pentoxide films prepared by RF reactive magnetron sputtering
- 光学精密工程 2015年23卷第9期页码：2438-2445
- 作者机构：
  
  南京航空航天大学机电工程学院,江苏南京,210016
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.51275230)();航空科学基金(No.20140152001)();江苏省研究生科研创新基金资助项目(No.KYLX_0226)(
- DOI：10.3788/OPE.20152309.2438
  中图分类号： O484.4
- 收稿日期：2015-03-12，
  
  修回日期：2015-04-03，
  
  纸质出版日期：2015-09-25
- 稿件说明：
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张圣斌, 左敦稳, 卢文壮等. 磁控溅射法制备的五氧化二钒薄膜光电特性[J]. 光学精密工程, 2015,23(9): 2438-2445

ZHANG Sheng-bin, ZUO Dun-wen, LU Wen-zhuang etc. Optical and electrical properties of vanadium pentoxide films prepared by RF reactive magnetron sputtering[J]. Editorial Office of Optics and Precision Engineering, 2015,23(9): 2438-2445
张圣斌, 左敦稳, 卢文壮等. 磁控溅射法制备的五氧化二钒薄膜光电特性[J]. 光学精密工程, 2015,23(9): 2438-2445 DOI： 10.3788/OPE.20152309.2438.

ZHANG Sheng-bin, ZUO Dun-wen, LU Wen-zhuang etc. Optical and electrical properties of vanadium pentoxide films prepared by RF reactive magnetron sputtering[J]. Editorial Office of Optics and Precision Engineering, 2015,23(9): 2438-2445 DOI： 10.3788/OPE.20152309.2438.

摘要

利用射频磁控溅射方法

选取溅射时间为15

30和45 min

在蓝宝石衬底上沉积了V

薄膜。研究了其他实验参量不变

溅射时间不同对薄膜结构、薄膜厚度、表面形貌、电学及光学性能的影响。实验结果表明

制备出的薄膜为单一组分的V

薄膜

其在(001)面有明显的择优取向。随着溅身时间的增加

结晶性能逐渐变强

晶粒尺寸也逐渐变大

而表面粗糙度值会逐渐降低;在晶体结构完整的基础上

随着溅射时间的增加

相变温度和经历的温度范围会逐渐增加

电学突变性能会降低。测试了薄膜在中红外波段的高低温透过率

结果显示:当膜厚为350 nm

波长为5 μm 时

薄膜的透过率从25 ℃时的81%变为300 ℃的7%

变化幅度可达74%;所有薄膜相变前后透过率的比值均为9~13

表现出了非常突出的光学开关特性。

Abstract

Vanadium oxide (V

) films were deposited on sapphire substrates by Radio Frequency(RF) reactive magnetron sputtering at sputtering time of 15 min

25 min

30 min and 45 min. The film structures

film thicknesses

surface morphology

electrical and optical properties were studied at different sputtering time and other experimental parameters unchanged. The results indicate that the deposited films are polycrystalline V

films on (001) preferred orientation. With the increase of sputtering time

crystallization behaviors become stronger

the grain sizes are larger

and the surface roughness values are reduced gradually. Moreover

phase-transition temperatures and temperature ranges are increased while the electrical mutation properties are reduced. The transmittances of the films (thickness of 350 nm) in a middle-infrared band were detected at high and low temperatures. The results show that the rangeability of transmittances (wavelength of 5 μm) is as high as 74% which ranges from 81% at 25 ℃ to 7% at 300 ℃. All the transmittance ratios before and after phase transitions are between 9—13

showing a very prominent optical-switching property.

关键词

Keywords

references

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