剪切增稠抛光磨料液的制备及其抛光特性

李敏; 袁巨龙; 吕冰海

doi:10.3788/OPE.20152309.2513

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剪切增稠抛光磨料液的制备及其抛光特性

微纳技术与精密机械 | 更新时间：2020-08-12

- 剪切增稠抛光磨料液的制备及其抛光特性
- Preparation of shear thickening polishing abrasive slurries and their polishing properties
- 光学精密工程 2015年23卷第9期页码：2513-2521
- 作者机构：
  
  1. 浙江工业大学特种装备制造与先进加工技术教育部重点实验室,浙江杭州,310032
  2. 湖南大学国家高效磨削工程技术研究中心,湖南长沙,410082
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(No.51175166,No.51175468)();海外及港澳学者合作研究基金资助项目(No.51228501)();浙江省自然科学基金重点
- DOI：10.3788/OPE.20152309.2513
  中图分类号： TN305
- 收稿日期：2015-02-03，
  
  修回日期：2015-03-12，
  
  纸质出版日期：2015-09-25
- 稿件说明：
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李敏, 袁巨龙, 吕冰海. 剪切增稠抛光磨料液的制备及其抛光特性[J]. 光学精密工程, 2015,23(9): 2513-2521

LI Min, YUAN Ju-long, L&#220 etc. Preparation of shear thickening polishing abrasive slurries and their polishing properties[J]. Editorial Office of Optics and Precision Engineering, 2015,23(9): 2513-2521
李敏, 袁巨龙, 吕冰海. 剪切增稠抛光磨料液的制备及其抛光特性[J]. 光学精密工程, 2015,23(9): 2513-2521 DOI： 10.3788/OPE.20152309.2513.

LI Min, YUAN Ju-long, L&#220 etc. Preparation of shear thickening polishing abrasive slurries and their polishing properties[J]. Editorial Office of Optics and Precision Engineering, 2015,23(9): 2513-2521 DOI： 10.3788/OPE.20152309.2513.

摘要

为了实现对工件的剪切增稠抛光(STP)

采用机械混合与超声波分散法制备了一种Al

基STP磨料液

并研究了它们的抛光特性。利用应力控制流变仪考察其流变性能

通过扫描电镜和光学轮廓仪研究了单晶硅加工后表面显微组织的变化

并测量其表面粗糙度。结果表明:STP磨料液具有剪切变稀和可逆的剪切增稠特性

达到临界剪切速率后

会形成Al

“粒子簇”;当剪切速率增大至1000 s

-1

储能模量

耗能模量和耗散因子都增至最大值

此时主要表现为类似固体的弹性行为

有利于形成类似“柔性固着磨具”。在STP加工单晶硅过程中

采用塑性去除的材料去除方式。随着抛光时间的延长

硅片去除速率先增大后减小;表面粗糙度不断减小并趋于稳定。实验显示

磨粒浓度不宜过高

否则会因剪切增稠效应造成黏度过大

导致流动性差而影响抛光质量。当Al

质量分数为23%时

抛光25 min后

硅片表面粗糙度

由422.62 nm降至2.46 nm

去除速率达0.88 μm/min

表明其能实现单晶硅片的高效精密抛光。

Abstract

To realize Shear Thickening Polishing (STP) for workpieces

a kind of Al

-STP slurries were prepared by mechanical mixing and ultrasonic dispersion methods and their polishing properties were investigated. The rheological properties of dispersion of STP slurries were studied by using a stress controlled rheometer. The morphologies of a Si wafer before and after STPs were also researched by a Scanning Electron Microscopy(SEM) and an optical profilometer

and their surface roughnesses were measured. Experimental results indicate that the STP slurry sytem has shear thinning and reversible shear thickening behaviors. The Al

“cluster” would be formed as the critical shear rate is reached. When the shear rate increases to 1000 s

-1

the storage modulus

loss modulus and the dissipation factor are increased to a maximum value

respectively. At this time

the slurry shows the main properties of the elastic behavior like solid

which are conducive to the formation of “flexible fixed abrasive tool”. In STP process

the material of Si wafer is removed by ductile mode. As extension of polishing time

the material removal rate increases quickly

but grows at a slow rate in the later period. The surface roughness decreases and tends to a stable during the STP process. Moreorer

it suggests that the abrasive concentration should not be too high

otherwise polishing quality would be affected. When the mass fraction of Al

is 23%

the surface roughness

reduces from 422.62 nm to 2.46 nm and removal rate is up to 0.88 μm/min after polishing by 25 min

which indicate that it achieves high efficiency precision polishing of Si wafers.

关键词

Keywords

references

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