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1. 中国科学院大学 北京,中国,100049
2. 中国科学院 长春光学精密机械与物理研究所 应用光学国家重点实验室,吉林 长春,130033
收稿日期:2015-04-29,
修回日期:2015-06-09,
纸质出版日期:2016-04-25
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徐明飞, 庞武斌, 徐象如等. 高数值孔径投影光刻物镜的光学设计[J]. 光学精密工程, 2016,24(4): 740-746
XU Ming-fei, PANG Wu-bin, XU Xiang-ru etc. Optical design of high-numerical aperture lithographic lenses[J]. Editorial Office of Optics and Precision Engineering, 2016,24(4): 740-746
徐明飞, 庞武斌, 徐象如等. 高数值孔径投影光刻物镜的光学设计[J]. 光学精密工程, 2016,24(4): 740-746 DOI: 10.3788/OPE.20162404.0740.
XU Ming-fei, PANG Wu-bin, XU Xiang-ru etc. Optical design of high-numerical aperture lithographic lenses[J]. Editorial Office of Optics and Precision Engineering, 2016,24(4): 740-746 DOI: 10.3788/OPE.20162404.0740.
针对45 nm节点投影光刻物镜的应用
开展了工作波长为193 nm的深紫外浸没式高数值孔径(NA)投影光刻物镜的研究和研制。设计了数值孔径(NA)为1.30的离轴三反射镜投影光刻物镜和NA为1.35的同轴两反射镜投影光刻物镜
并对两个设计方案的优劣进行对比分析
选择了同轴式结构作为最终的设计方案。分析了系统在不同NA情况下可变光阑与其远心度之间的关系
提出了用双可变曲面光阑的设计方案来优化系统的远心度。实验表明
应用本文设计方案
光刻物镜的波像差小于1 nm
畸变小于1 nm;新型的可变光阑使系统NA在0.85~1.35变化时的最大远心度由5.83~17.57 mrad降低至0.26~3.21 mrad。本文提出的设计方案为45 nm节点高数值孔径投影光刻物镜的研制提供了有益的理论依据和指导。
For the manufacture of a lithographic lens with a 45 nm node
this paper focuses on the development of high numerical aperture (NA)
deep ultraviolet (DUV) immersion lithographic lenses. Firstly
an off-axis three mirror projection lithographic objective with the NA of 1.30 and a coaxial two mirror projection lithographic objective with the NA of 1.35 were designed. Two design methods and results were compared and the latter was chosen to be used final design. Then
the relationship between variable stop aperture and telecentricity under different NAs was analyzed. A scheme of dual variable curved apertures was proposed to reduce the image telecentricity of a lithographic lens. The final results show that both wavefront errors(Root MeanSquare
RMS) and distortion of the lithographic lens are less than 1 nm by using the proposed scheme. The new scheme with dual variable curved apertures makes the maximum telecentricity decreases from 5.83-17.57 mrad to 0.26-3.21 mrad when NA varies from 0.85 to 1.35. This scheme provides an advantageous theoretical guidance and basis for research and development of the lithographic lens with 45 nm node.
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